2SK3498(2-7B1B) [TOSHIBA]
TRANSISTOR 1 A, 450 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power;
| 型号： | 2SK3498(2-7B1B) |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 1 A, 450 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power 开关 脉冲 晶体管 |
| 文件： | 总3页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3498
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3498
DC-DC Converter, Relay Drive and Motor Drive
Unit: mm
Applications
•
•
•
•
Low drain-source ON resistance: R
= 4.0 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 0.6 S (typ.)
fs
= 100 µA (max) (V
Low leakage current: I
= 400 V)
DSS
DS
Enhancement-model: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
th DS
D
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
400
400
±30
1
V
V
V
DSS
Drain-gate voltage (R
= 20 kΩ)
V
GS
DGR
Gate-source voltage
V
GSS
DC (Note 1)
Pulse (Note 1)
I
D
Drain current
A
I
3
DP
Drain power dissipation (Tc = 25°C)
P
20
W
D
AS
AR
Single pulse avalanche energy
E
113
mJ
JEDEC
JEITA
―
(Note 2)
SC-64
2-7B1B
Avalanche current
I
1
2
A
TOSHIBA
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
150
ch
Weight: 0.36 g (typ.)
Storage temperature range
T
−55 to150
stg
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
R
6.25
125
°C/W
°C/W
th (ch-c)
th (ch-a)
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V
DD
= 90 V, T = 25°C (initial), L = 183 mH, R = 25 Ω,
ch
G
I
= 1 A
AR
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
JEITA
―
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1
2002-09-04
2SK3498
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= ±25 V, V = 0 V
±30
±10
µA
V
GSS
GS
DS
Drain-source breakdown voltage
Drain cut-OFF current
V
V
I = ±10 µA, V = 0 V
G DS
(BR) GSS
I
V
= 400 V, V = 0 V
GS
100
µA
V
DSS
(BR) DSS
DS
Drain-source breakdown voltage
Gate threshold voltage
I
= 10 mA, V
= 0 V
GS
450
2.0
D
V
V
V
V
= 10 V, I = 1 mA
4.0
5.5
V
th
DS
GS
DS
D
Drain-source ON resistance
R
= 10 V, I = 0.5 A
4.2
0.6
145
35
80
Ω
S
DS (ON)
D
Y
fs
= 10 V, I = 0.5 A
0.3
Forward transfer admittance
Input capacitance
D
C
C
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
DS
rss
C
oss
Output capacitance
Rise time
10 V
I = 0.5 A
D
t
14
56
26
75
5.7
r
V
GS
V
OUT
0 V
Turn-ON time
Switching time
t
on
R
= 400 Ω
L
Fall time
t
f
∼
−
V
200 V
DD
<
Duty 1%, t = 10 µs
Turn-OFF time
t
=
w
off
Total gate charge
Q
g
(gate-source plus gate-drain)
∼
−
V
320 V, V
= 10 V, I = 1 A
GS D
nC
DD
Q
Q
Gate-source charge
3.0
2.7
gs
Gate-drain (“miller”) charge
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
I
A
A
Continuous drain reverse current (Note 1)
1
3
DR
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
I
DRP
V
I
I
= 1 A, V
= 1 A, V
= 0 V
−1.7
V
DSF
DR
DR
GS
GS
t
= 0 V,
650
14.6
ns
µC
rr
dI /dt = 100 A/µs
Q
DR
rr
Marking
※ Lot Number
Type
K3498
Month (starting from alphabet A)
※
Year
(last number of the christian era)
2
2002-09-04
2SK3498
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
3
2002-09-04
相关型号：
2SK3498(2-7J1B)
TRANSISTOR 1 A, 450 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7J1B, 3 PIN, FET General Purpose Power
TOSHIBA
2SK3498_06
Silicon N-Channel MOS Type DC/DC Converter, Relay Drive and Motor Drive Applications
TOSHIBA
©2020 ICPDF网 联系我们和版权申明