2SK3497 [TOSHIBA]
High Power Amplifier Application; 高功率放大器应用
| 型号： | 2SK3497 |
| 厂家： | 
TOSHIBA |
| 描述： | High Power Amplifier Application |
| 文件： | 总3页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3497
High Power Amplifier Application
Unit: mm
ꢀ High breakdown voltage
ꢀ Complementary to 2SJ618
: VDSS = 180V
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source voltage
V
V
180
±12
V
V
DSS
GSS
DC (Note )
Drain current
I
10
A
D
Pulse (Note )
I
30
A
DP
Drain power dissipation (Tc = 25°C)
Channel temperature
P
130
W
°C
°C
D
ch
stg
T
150
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
Storage temperature range
T
−55~150
Note : Please use devices on condition that the channel temperature is
below 150°C.
JEDEC
JEITA
―
―
TOSHIBA
2-16C1B
Thermal Characteristics
Weight: 4.6 g (typ.)
Characteristics
Symbol
Max
0.96
50
Unit
Thermal resistance, channel to case
R
°C / W
°C / W
th (ch−c)
th (ch−a)
2
3
Thermal resistance, channel to
ambient
R
1
1
2003-07-16
2SK3497
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
V
V
= ±12 V, V = 0 V
—
—
—
—
10
µA
µA
GSS
GS
DS
DS
Drain cut−off current
I
= 180V, V
= 0 V
100
DSS
GS
Drain−source breakdown
V
I
= 10 mA, V
= 0 V
180
—
—
V
(BR) DSS
D
GS
voltage
Gate threshold voltage
Drain−source saturation voltage
Forward transfer admittance
Input capacitance
V
V
V
V
= 10 V, I = 1 mA
1.1
—
—
—
2.1
0.75
—
V
V
S
th
DS (ON)
|Y |
DS
GS
DS
D
V
= 7 V, I = 5 A
D
= 10 V, I = 5 A
6.0
—
12.0
2400
220
30
fs
D
C
C
—
iss
V
= 30 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
—
—
DS
rss
C
—
—
oss
This transistor is an electrostatic sensitive device. Please handle with caution.
Marking
TOSHIBA
K3497
TYPE
※ Lot Number
※
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
2
2003-07-16
2SK3497
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
3
2003-07-16
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