2SK3497_09 [TOSHIBA]
High Power Amplifier Application; 高功率放大器应用
| 型号： | 2SK3497_09 |
| 厂家： | 
TOSHIBA |
| 描述： | High Power Amplifier Application |
| 文件： | 总5页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3497
High Power Amplifier Application
Unit: mm
15.9 MAX.
Ф3.2 ± 0.2
z High breakdown voltage: V
z Complementary to 2SJ618
= 180 V
DSS
2.0 ± 0.3
＋0.3
1.0
－0.25
5.45 ± 0.2
5.45 ± 0.2
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
1
2
3
Drain−source voltage
Gate−source voltage
V
V
180
±12
V
V
DSS
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
GSS
DC (Note 1)
Drain current
I
10
A
D
Pulse (Note 1)
I
30
A
DP
JEDEC
JEITA
⎯
Drain power dissipation (Tc = 25°C)
Channel temperature
P
130
W
°C
°C
D
ch
stg
SC-65
T
150
TOSHIBA
2-16C1B
Storage temperature range
T
−55 to 150
Weight: 4.6 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
0.96
50
Unit
Thermal resistance, channel to case
R
°C / W
°C / W
th (ch−c)
th (ch−a)
2
Thermal resistance, channel to
ambient
R
1
3
1
2009-01-27
2SK3497
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain cut−off current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= 180V, V
= 0 V
= 0 V
⎯
⎯
⎯
⎯
100
10
μA
μA
V
DSS
DS
GS
GS
Gate leakage current
I
= ±12 V, V
GSS
DS
Drain−source breakdown voltage
Drain−source saturation voltage
Gate threshold voltage
V
I
= 10 mA, V
= 0 V
180
⎯
⎯
⎯
(BR) DSS
D
GS
V
V
V
V
= 7 V, I = 5 A
⎯
0.75
2.1
⎯
V
DS (ON)
GS
DS
DS
D
V
= 10 V, I = 1 mA
1.1
6.0
⎯
⎯
V
th
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 5 A
12.0
2400
220
30
S
D
C
C
⎯
iss
V
= 30 V, V
= 0 V, f = 1 MHz
GS
pF
Output capacitance
⎯
⎯
DS
oss
Reverse transfer capacitance
C
⎯
⎯
rss
This transistor is an electrostatic-sensitive device. Please handle with caution.
Marking
TOSHIBA
K3497
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead (Pb)-Free
2
2009-01-27
2SK3497
I
– V
I – V
D GS
D
DS
20
16
12
8
10
8
Common source
= 10 V
4
3.5
V
DS
Pulse test
3
6
4
2
0
Tc = 100°C
V
= 2.5 V
GS
25
−55
4
Common source
Tc = 25°C
Pulse test
0
0
2
4
6
8
10
0
1
2
3
4
Drain-source voltage
V
DS
(V)
Gate-source voltage
V
GS
(V)
⎪Y ⎪ – I
fs
V
– Tc
DS (ON)
D
100
10
1
3
2
1
0
Common source
= 10 V
Pulse test
Common source
V
GS
V
= 10 V
DS
Pulse test
Tc = 100°C
−55
25
I
= 10 A
D
5
2.5
0.1
0.1
1
10
−80
−40
0
40
80
120
160
Drain current
I
(A)
Case temperature Tc (°C)
D
Capacitance – V
P – Tc
D
DS
10000
1000
100
150
C
iss
120
90
60
C
oss
Common source
= 0 V
f=1 MHZ
30
0
C
rss
V
GS
Tc = 25°C
10
0.1
10
1
100
0
40
80
120
160
Drain-source voltage
V
DS
(V)
Case temperature Tc (°C)
3
2009-01-27
2SK3497
Safe operating area
100
I
I
MAX. (pulsed) *
D
MAX. (continuous)
t = 1 ms*
D
10
DC OPERATION
Tc=25℃
1
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
V
DSS
MAX.
0.1
1
100
10
1000
Drain-source voltage
V
DS
(V)
4
2009-01-27
2SK3497
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2009-01-27
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