TMG3CQ60D [SANREX]
TRIAC(Surface Mount Device/Non-isolated); TRIAC (表面贴装器件/非隔离)![TMG3CQ60D](http://pdffile.icpdf.com/pdf1/p00032/img/icpdf/TMG3CQ60D_165860_icpdf.jpg)
型号: | TMG3CQ60D |
厂家: | ![]() |
描述: | TRIAC(Surface Mount Device/Non-isolated) |
文件: | 总3页 (文件大小:482K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TRIAC Surface Mount Device / Non-isolated
(
)
TMG3CQ60D
Tj=150℃
Triac TMG3CQ60D is designed for full wave AC control applications.
TO-252
It can be used as an ON/OFF function or for phase control operation.
(5.34)
(0.9)
Typical Applications
6.60ꢀ±0.20
5.34ꢀ±0.30
2.30ꢀ±0.10
0.50ꢀ±0.10
●
Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers, Micro
Wave Ovens, Hair Dryers, other control applications
TC POINT
2
2
●
Industrial Use
: SMPS, Copier Machines, Motor Controls, Dimmer, SSR,
Heater Controls, Vending Machines, other control
applications
1
2
3
1
0.96ꢀ±0.20
0.76ꢀ±0.20
2.30ꢀ±0.20
0.50ꢀ±0.10
1.02ꢀ±0.20
3
Features
IT(RMS)=3A
2.30ꢀ±0.20
2.30ꢀ±0.20
●
1
2
3
T1
T2
Gate
●
●
●
High Surge Current
Low Voltage Drop
Lead-Free Package
2
Unit:mm
Identifying Code:T3CQ6D
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Symbol
Item
Reference
Ratings
600
Unit
V
VDRM
IT(RMS)
ITSM
Repetitive Peak Off-State Voltage
R.M.S. On-State Current
Surge On-State Current
3
A
Tc=136℃
One cycle, 50Hz/60Hz, Peak value non-repetitive
A
27 30
/
2
2
2
I t
3.7
A S
I t(for fusing)
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
1.5
W
W
A
G(AV)
P
0.1
IGM
VGM
Tj
1
Peak Gate Voltage
7
V
Operating Junction Temperature
Storage Temperature
Mass
℃
℃
g
-40~+150
-40~+150
0.32
Tstg
■Electrical Characteristics
Ratings
Symbol
Item
Reference
Unit
Min. Typ. Max.
DRM
I
Repetitive Peak Off-State Current
Peak On-State Voltage
D
DRM
1
mA
V
V =V
, Single phase, half wave, Tj=150℃
TM
V
T
1.4
15
15
I =4.5A, Inst. measurement
+
IGT1
1
-
IGT1
2
3
4
1
2
3
4
Gate Trigger Current
Gate Trigger Voltage
mA
+
IGT3
-
IGT3
15
1.5
1.5
D
L
V =6V,R =10Ω
+
VGT1
-
VGT1
V
V
+
VGT3
-
VGT3
1.5
1
GD
V
Non-Trigger Gate Voltage
D
DRM
0.1
Tj=150℃,V =/V
2
Critical Rate of Rise of Off-State
Voltage at Commutation
2
D
DRM
5
〔dv dt〕c
Tj=150℃,〔di dt〕c=
-
1.5A ms,V =/V
V μs
/
/
/
/
3
H
I
Holding Current
2
mA
Junction to case
3.8
60
Rth(j-c)
Rth(j-a)
Thermal Resistance
℃ W
/
Junction to ambient
+
-
)
1(
)
2(
3( III+)
4( III-)
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
TMG3CQ60D
Gate Characteristics
On-State Characteristics(MAX)
100
10
Tj=25℃
Tj=150℃
PGM(1.5W)
VGM(7V)
PG(AV() 0.1W)
10
1
25℃ 25℃
1+GT1 1+GT3
1-GT1
1-GT3
1
0.1
VGD(0.1V)
0.1
0
0.01
0.5
1
1.5
2
2.5
3
3.5
4
1
10
100
1000
Gate Curren(t mA)
On-State Voltage(V)
RMS On-State Current vs
Maximum Power Dissipation
RMS On-State vs
Allowable Case Temperature
4
3.5
3
150
145
140
135
130
=150゜
θ
=180゜
θ
π
θ
0
2π
θ=
120゜
θ
3
60゜
θ=
90゜
θ
:Conduction Angle
2.5
2
θ=
60゜
θ=30゜
θ=60゜
θ=
30゜
θ=90゜
θ=120゜
θ=150゜
θ=180゜
1.5
1
θ
π
0
2π
θ
3
6
0゜
0.5
0
θ:Conduction Angle
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
RMS On-State Curren(t A)
RMS On-State Curren(t A)
Surge On-State Current Rating
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ(Non-Repetitive)
Transient Thermal Impedance
100
35
30
25
20
15
10
Rth(j-a)
60H Z
50H Z
10
1
Rth(j-c)
5
0
1
10
100
0.01
0.1
1
10
100 1000 10000 100000
Time(Sec.)
Time(Cycles)
IGT -T(j Typical)
1000VGT -T(j Typical)
1000
100
10
V+GT(1 !+)
V-GT(1 !-)
V-GT(3 #-)
100
I+GT1(!+)
I-GT1(!-)
I-GT3(#-)
10
-
50
-25
0
25
100 125 15 0
50
75
-
50
-25
0
25
50
75 100 125 150
Junction Temp. T(j ℃)
Junction Temp. T(j ℃)
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
TMG3CQ60D
R.M.S On-State vs
Allowable Ambient Temperature
15 0
125
100
θ
π
0
2π
θ
360゜
θ:Conduction Angle
Conduction Angle 180゜
75
50
25
0
0
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8 2 2.2 2.4
R.M.S On-State Curren(t A)
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
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