TMG3D80C [SANREX]
TRIAC(Through Hole/Non-isolated); TRIAC (通孔/非隔离)型号: | TMG3D80C |
厂家: | SANREX CORPORATION |
描述: | TRIAC(Through Hole/Non-isolated) |
文件: | 总3页 (文件大小:479K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
(
)
TRIAC Through Hole/Non-isolated
TMG3D80C
(
)
Sensitive Gate
Triac TMG3D80C is designed for full wave AC control applications.
TO-251
It can be used as an ON/OFF function or for phase control operation.
6.60ꢀ±0.20
5.34ꢀ±0.30
2.30ꢀ±0.10ꢀ
0.50ꢀ±0.10ꢀ
TC POINT
Typical Applications
Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers, Micro
2
1
●
2
Wave Ovens, Hair Dryers, other control applications
3
●
Industrial Use
: SMPS, Copier Machines, Motor Controls, Dimmer, SSR,
Heater Controls, Vending Machines, other control
applications
1.07
2
0.96ꢀ±0.20
0.76ꢀ±0.20
0.50ꢀ±0.10
1
T1
T2
Gate
2
3
Features
●
●
●
●
IT(RMS)=3A
High Surge Current
Low Voltage Drop
Lead-Free Package
1
2
3
2.30ꢀ±0.20
2.30ꢀ±0.20
Unit:mm
Identifying Code:T3D8C
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Symbol
Item
Reference
Ratings
800
Unit
V
VDRM
IT(RMS)
ITSM
Repetitive Peak Off-State Voltage
R.M.S. On-State Current
Surge On-State Current
3
A
Tc=111℃
One cycle, 50Hz/60Hz, Peak value non-repetitive
A
27 30
/
2
2
2
I t
3.7
A S
I t(for fusing)
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
1.5
W
W
A
G(AV)
P
0.1
IGM
VGM
Tj
1
Peak Gate Voltage
7
V
Operating Junction Temperature
Storage Temperature
Mass
℃
℃
g
-40~+125
-40~+150
0.39
Tstg
■Electrical Characteristics
Ratings
Symbol
Item
Reference
Unit
Min. Typ. Max.
DRM
I
Repetitive Peak Off-State Current
Peak On-State Voltage
D
DRM
1
mA
V
V =V
, Single phase, half wave, Tj=125℃
TM
V
T
1.4
I =4.5A, Inst. measurement
+
IGT1
1
5
-
IGT1
2
3
4
1
2
3
4
5
Gate Trigger Current
Gate Trigger Voltage
mA
+
IGT3
10
-
IGT3
5
D
L
V =6V,R =10Ω
+
1.5
VGT1
-
1.5
VGT1
V
V
+
2.0
VGT3
-
1.5
VGT3
1
GD
V
Non-Trigger Gate Voltage
D
DRM
0.2
Tj=125℃,V =/V
2
Critical Rate of Rise of Off-State
Voltage at Commutation
D
5
〔dv dt〕c
Tj=125℃,〔di dt〕c=
-
1.5A ms,V =400V
V μs
/
/
/
/
H
I
Holding Current
2
mA
Junction to case
3.8
60
Rth(j-c)
Rth(j-a)
Thermal Resistance
℃ W
/
Junction to ambient
+
-
)
1(
)
2(
3( III+)
4( III-)
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
TMG3D80C
On-State Characteristics(MAX)
Gate Characteristics
100
10
Tj=25℃
Tj=125℃
VGM(7V)
PGM(1.5W)
10
PG(AV() 0.1W)
1
25℃
1+GT1
1-GT1
1-GT3
25℃
1+GT3
1
VG(D 0.2V)
0.1
0
0.1
1
0.5
1
1.5
2
2.5
3
3.5
10
100
1000
On-State Voltage(V)
Gate Curren(t mA)
RMS On-State vs
Allowable Case Temperature
RMS On-State Current vs
Maximum Power Dissipation
4
3.5
3
125
120
θ
θ
=
180゜
π
0
2π
θ
=
150゜
θ
θ=
120゜
36
0゜
θ
:Conduction Angle
θ=
90゜
2.5
2
θ= 3 0 ゜
θ
=
60゜
θ= 6 0 ゜
θ=
30゜
115
110
105
θ= 9 0 ゜
θ= 120゜
1.5
1
θ
π
θ= 150゜
θ= 180゜
0
2π
θ
3
60゜
0.5
0
θ
:Conduction Angle
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
RMS On-State Curren(t A)
RMS On-State Curren(t A)
Surge On-State Current Rating
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ(Non-Repetitive)
Transient Thermal Impedance
35
100
10
Rth(j-a)
30
25
20
15
10
60H Z
50H Z
Rth(j-c)
5
0
1
0.01
1
10
Time(Cycles)
100
0.1
1
10
100 1000 10000 100000
Time(Sec.)
IGT -T(j Typical)
VGT -T(j Typical)
1000
100
10
1000
V+GT(1 !+)
V-GT(1 !-)
V+GT(3 #+)
V-GT(3 #-)
I+GT1(!+)
100
I-GT1(!-)
I-GT(3 #-)
I+GT3(#+)
10
50
-
50
-25
0
25
50
75 100 125 150
-
-25
0
25
50
75 100 125 150
Junction Temp.T(j ℃)
Junction Temperature(℃)
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
TMG3D80C
RMS On-State vs
Allowable Ambient Temperature
θ
125
100
75
π
0
2π
θ
360゜
θ
:Conduction Angle
50
25
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8 2 2.2 2.4
RMS On-State Curren(t A)
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
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