IRFP421 [SAMSUNG]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;


型号：	IRFP421
厂家：	SAMSUNG
描述：	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
文件：	总7页 (文件大小：527K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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IRFP422

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SAMSUNG

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

INFINEON