IRFP4232PBF [INFINEON]
PDP MOSFET; PDP MOSFET
| 型号： | IRFP4232PBF |
| 厂家： | 
Infineon |
| 描述： | PDP MOSFET |
| 文件： | 总8页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96965A
IRFP4232PbF
PDP MOSFET
Features
Key Parameters
l
Advanced process technology
VDS min
250
300
30
V
V
l
Key parameters optimized for PDP Sustain &
Energy Recovery applications
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
l
Low EPULSE rating to reduce the power
dissipation in Sustain & ER applications
Low QG for fast response
High repetitive peak current capability for
reliable operation
m:
EPULSE typ.
310
117
175
µJ
A
l
l
IRP max @ TC= 100°C
TJ max
°C
l
Short fall & rise times for fast switching
175°C operating junction temperature for
improved ruggedness
l
D
l
Repetitive avalanche capability for robustness
and reliability
G
TO-247AC
S
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Max.
±20
Parameter
Gate-to-Source Voltage
Units
VGS
V
VGS (TRANSIENT)
ID @ TC = 25°C
ID @ TC = 100°C
IDM
±30
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
60
A
42
240
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
117
Repetitive Peak Current g
Power Dissipation
430
W
210
Power Dissipation
2.9
Linear Derating Factor
W/°C
°C
TJ
-40 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lbxin (1.1Nxm)
N
Thermal Resistance
Parameter
Junction-to-Case f
Typ.
–––
Max.
Units
RθJC
0.35
°C/W
Notes through ꢀare on page 8
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1
04/21/05
IRFP4232PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I = 1mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
250
–––
–––
3.0
–––
180
30
–––
V
∆ΒVDSS/∆TJ
RDS(on)
––– mV/°C
D
VGS = 10V, ID = 42A e
mΩ
35.7
5.0
VDS = VGS, ID = 250µA
VGS(th)
–––
-15
–––
–––
–––
–––
–––
160
60
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
95
––– mV/°C
VDS = 200V, VGS = 0V
5.0
150
100
-100
–––
240
–––
–––
µA
V
V
V
DS = 200V, VGS = 0V, TJ = 125°C
GS = 20V
GS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
VDS = 25V, ID = 42A
DD = 125V, ID = 42A, VGS = 10Ve
gfs
Qg
Qgd
tst
S
V
–––
–––
100
nC
Gate-to-Drain Charge
VDD = 200V, VGS = 15V, RG= 4.7Ω
L = 220nH, C= 0.4µF, VGS = 15V
VDS = 200V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.4µF, VGS = 15V
Shoot Through Blocking Time
–––
ns
µJ
–––
–––
310
950
–––
–––
EPULSE
Energy per Pulse
VDS = 200V, RG= 4.7Ω, TJ = 100°C
VGS = 0V
Ciss
Input Capacitance
––– 7290 –––
VDS = 25V
Coss
Crss
Output Capacitance
–––
–––
–––
–––
610
240
420
5.0
–––
–––
–––
–––
pF
ƒ = 1.0MHz,
See Fig.9
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
VGS = 0V, VDS = 0V to 200V
Coss eff.
LD
Between lead,
D
S
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
13
–––
and center of die contact
Avalanche Characteristics
Typ.
–––
–––
300
–––
Max.
220
43
Parameter
Units
mJ
mJ
V
EAS
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltageꢀc
Avalanche Currentꢀd
EAR
VDS(Avalanche)
IAS
–––
42
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS @ TC = 25°C
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
–––
–––
60
A
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)ꢀc
–––
–––
240
TJ = 25°C, IS = 42A, VGS = 0V e
TJ = 25°C, IF = 42A, VDD = 50V
di/dt = 100A/µs e
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
240
1.0
V
360
ns
nC
Qrr
––– 1230 1850
2
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IRFP4232PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
VGS
15V
10V
8.0V
7.0V
TOP
TOP
BOTTOM
BOTTOM
7.0V
7.0V
≤ 60µs PULSE WIDTH
Tj = 25°C
≤ 60µs PULSE WIDTH
Tj = 175°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
4.0
3.0
2.0
1.0
0.0
I
= 42A
D
V
= 10V
GS
100
10
1
T
= 175°C
J
T
= 25°C
J
V
= 30V
DS
≤ 60µs PULSE WIDTH
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
1000
1200
L = 220nH
C = Variable
L = 220nH
C = 0.4µF
100°C
800
1000
800
600
400
200
100°C
25°C
25°C
600
400
200
0
160
170
180
190
200
210
220
230
150
160
170
180
190
200
I
Peak Drain Current (A)
V
Drain-to -Source Voltage (V)
D,
DS,
Fig 6. Typical EPULSE vs. Peak Drain Current
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
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3
IRFP4232PbF
1600
1000.0
100.0
10.0
1.0
L = 220nH
1400
C= 0.4µF
C= 0.3µF
1200
T
= 175°C
J
C= 0.2µF
1000
800
600
400
200
0
T
= 25°C
J
V
= 0V
GS
1.0
0.1
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.2
Temperature (°C)
V
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical EPULSE vs.Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
12000
10000
8000
6000
4000
2000
0
20
V
C
= 0V,
f = 1 MHZ
GS
I = 42A
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 200V
DS
C
= C
rss
gd
16
12
8
VDS= 125V
VDS= 50V
C
= C + C
ds
oss
gd
Ciss
4
Coss
Crss
0
0
40
80
120 160 200 240 280
1
10
100
1000
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
60
54
48
42
36
30
24
18
12
6
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
1µsec
10µsec
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
0
0.1
25
50
75
100
125
150
175
1
10
100
1000
T
, CaseTemperature (°C)
V
, Drain-to-Source Voltage (V)
C
DS
Fig 12. Maximum Safe Operating Area
Fig 11. Maximum Drain Current vs. Case Temperature
4
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IRFP4232PbF
1000
800
600
400
200
0
600
500
400
300
200
100
0
I
I
= 42A
D
D
TOP
12A
18A
42A
BOTTOM
T
= 25°C
J
T
= 125°C
J
4.0
6.0
8.0
10.0
25
50
75
100
125
150
175
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 13. On-Resistance Vs. Gate Voltage
Fig 14. Maximum Avalanche Energy Vs. Temperature
5.5
200
ton= 1µs
Duty cycle = 0.25
5.0
4.5
Half Sine Wave
Square Pulse
160
I
= 250µA
D
4.0
3.5
3.0
2.5
2.0
1.5
120
80
40
0
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
25
50
75
100
125
150
175
T
Case Temperature (°C)
Fig 16. Typical Repetitive peak Current vs.
Fig 15. Threshold Voltage vs. Temperature
Case temperature
1
D = 0.50
0.1
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.0091
0.0487
0.1264
0.1660
0.000003
0.000071
0.001743
0.024564
0.01
τ
0.02
0.01
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2τ2
3τ3
4τ4
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP4232PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• di/dt controlled by RG
RG
+
-
Body Diode
Inductor Current
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
0.01
Ω
t
p
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
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IRFP4232PbF
Fig 21b. tst Test Waveforms
Fig 21a. tst and EPULSE Test Circuit
Fig 21c. EPULSE Test Waveforms
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7
IRFP4232PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFPE30
035H
57
56
DATE CODE
YEAR 0 = 2000
WEEK 35
Note: "P" in assembly line
position indicates "Lead-Free"
AS S E MB L Y
LOT CODE
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.25mH,
RG = 25Ω, IAS = 42A.
Data and specifications subject to change without notice.
This product has been designed for the Consumer market.
Qualification Standards can be found on IR’s Web site.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢁ Half sine wave with duty cycle = 0.25, ton=1µsec.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/05
8
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