IRFP4310Z [ISC]
N-Channel MOSFET Transistor;
| 型号： | IRFP4310Z |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | N-Channel MOSFET Transistor |
| 文件： | 总2页 (文件大小：336K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRFP4368，IIRFP4368
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤1.85mΩ
·Enhancement mode:
Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched And High Frequency Circuits
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VDSS
VGS
ID
PARAMETER
VALUE
75
UNIT
Drain-Source Voltage
V
V
Gate-Source Voltage
±20
195
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @TC=25℃
Max. Operating Junction Temperature
Storage Temperature
A
IDM
1280
520
A
PD
W
℃
℃
175
Tj
-55~175
Tstg
·THERMAL CHARACTERISTICS
SYMBOL
Rth(j-c)
PARAMETER
MAX
UNIT
℃/W
℃/W
Channel-to-case thermal resistance
0.29
40
Channel-to-ambient thermal resistance
Rth(j-a)
1
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRFP4368，IIRFP4368
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
BVDSS
VGS(th)
RDS(on)
IGSS
PARAMETER
CONDITIONS
MIN
75
TYP
MAX
UNIT
V
Drain-Source Breakdown Voltage VGS=0V; ID=250μA
Gate Threshold Voltage
2.0
4.0
1.85
±0.1
20
V
VDS=VGS; ID=250μA
VGS=10V; ID=195A
VGS= ±20V
Drain-Source On-Resistance
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
mΩ
μA
μA
V
IDSS
VDS=75V; VGS= 0V
IS=195A, VGS = 0V
VSD
1.3
2
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
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