首页 |元器件品牌

IRFP4232PBF_07 [INFINEON]

Advanced process technology; 先进的工艺技术
IRFP4232PBF_07
型号： IRFP4232PBF_07
厂家： Infineon    Infineon
描述：

Advanced process technology
先进的工艺技术
文件： 总8页 (文件大小：291K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
PD - 96965A  
IRFP4232PbF  
PDP MOSFET  
Features  
Key Parameters  
l
Advanced process technology  
VDS min  
250  
300  
30  
V
V
l
Key parameters optimized for PDP Sustain &  
Energy Recovery applications  
VDS (Avalanche) typ.  
RDS(ON) typ. @ 10V  
EPULSE typ.  
l
Low EPULSE rating to reduce the power  
dissipation in Sustain & ER applications  
Low QG for fast response  
High repetitive peak current capability for  
reliable operation  
m
310  
117  
175  
µJ  
A
l
l
IRP max @ TC= 100°C  
TJ max  
°C  
l
Short fall & rise times for fast switching  
l175°C operating junction temperature for  
D
improved ruggedness  
l
Repetitive avalanche capability for robustness  
and reliability  
G
TO-247AC  
S
Description  
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch  
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve  
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C  
operating junction temperature and high repetitive peak current capability. These features combine to  
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.  
Absolute Maximum Ratings  
Max.  
±20  
Parameter  
Gate-to-Source Voltage  
Units  
VGS  
V
VGS (TRANSIENT)  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
±30  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
60  
A
42  
240  
IRP @ TC = 100°C  
PD @TC = 25°C  
PD @TC = 100°C  
117  
Repetitive Peak Current  
430  
Power Dissipation  
W
210  
Power Dissipation  
2.9  
Linear Derating Factor  
W/°C  
°C  
TJ  
-40 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature for 10 seconds  
Mounting Torque, 6-32 or M3 Screw  
300  
10lb in (1.1N m)  
N
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
Units  
Rθ  
Junction-to-Case  
0.35  
°C/W  
JC  
Notes  through ꢀare on page 8  
www.irf.com  
1
09/14/07  
IRFP4232PbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Conditions  
VGS = 0V, ID = 250µA  
Reference to 25°C, I = 1mA  
Parameter  
Min. Typ. Max. Units  
BVDSS  
Drain-to-Source Breakdown Voltage  
Breakdown Voltage Temp. Coefficient  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
250  
–––  
–––  
3.0  
–––  
180  
30  
–––  
V
V
/ T  
∆
J
∆Β  
––– mV/°C  
D
DSS  
VGS = 10V, ID = 42A  
RDS(on)  
VGS(th)  
35.7  
5.0  
mΩ  
V
VDS = VGS, ID = 250µA  
–––  
-15  
–––  
–––  
–––  
–––  
–––  
160  
60  
∆VGS(th)/∆TJ  
IDSS  
Gate Threshold Voltage Coefficient  
Drain-to-Source Leakage Current  
–––  
–––  
–––  
–––  
–––  
95  
––– mV/°C  
VDS = 200V, VGS = 0V  
5.0  
150  
100  
-100  
–––  
240  
–––  
–––  
–––  
–––  
–––  
–––  
µA  
VDS = 200V, VGS = 0V, TJ = 125°C  
V
GS = 20V  
GS = -20V  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Forward Transconductance  
Total Gate Charge  
nA  
V
VDS = 25V, ID = 42A  
gfs  
Qg  
Qgd  
td(on)  
tr  
S
VDD = 125V, ID = 42A, VGS = 10V  
–––  
–––  
–––  
–––  
–––  
–––  
100  
nC  
Gate-to-Drain Charge  
Turn-On Delay Time  
VDD = 125V, VGS = 10V  
37  
ID = 42A  
Rise Time  
100  
64  
ns  
td(off)  
tf  
RG = 5.0Ω  
See Fig. 22  
Turn-Off Delay Time  
Fall Time  
63  
tst  
V
DD = 200V, VGS = 15V, RG= 4.7Ω  
L = 220nH, C= 0.4µF, VGS = 15V  
DS = 200V, RG= 4.7Ω, TJ = 25°C  
Shoot Through Blocking Time  
–––  
ns  
µJ  
–––  
–––  
310  
950  
–––  
–––  
EPULSE  
V
Energy per Pulse  
L = 220nH, C= 0.4µF, VGS = 15V  
VDS = 200V, RG= 4.7Ω, TJ = 100°C  
VGS = 0V  
Ciss  
Input Capacitance  
––– 7290 –––  
VDS = 25V  
Coss  
Crss  
Output Capacitance  
–––  
–––  
–––  
–––  
610  
240  
420  
5.0  
–––  
–––  
–––  
–––  
pF  
ƒ = 1.0MHz,  
See Fig.5  
Reverse Transfer Capacitance  
Effective Output Capacitance  
Internal Drain Inductance  
VGS = 0V, VDS = 0V to 200V  
Coss eff.  
LD  
Between lead,  
D
S
nH 6mm (0.25in.)  
from package  
G
LS  
Internal Source Inductance  
–––  
13  
–––  
and center of die contact  
Avalanche Characteristics  
Typ.  
–––  
–––  
300  
–––  
Max.  
220  
43  
Parameter  
Units  
EAS  
Single Pulse Avalanche Energy  
Repetitive Avalanche Energy  
Repetitive Avalanche Voltage  
Avalanche Current  
mJ  
mJ  
V
EAR  
VDS(Avalanche)  
IAS  
–––  
42  
A
Diode Characteristics  
Conditions  
Parameter  
Min. Typ. Max. Units  
IS @ TC = 25°C  
ISM  
MOSFET symbol  
Continuous Source Current  
–––  
–––  
60  
showing the  
(Body Diode)  
A
integral reverse  
p-n junction diode.  
Pulsed Source Current  
(Body Diode)  
–––  
–––  
240  
TJ = 25°C, IS = 42A, VGS = 0V  
TJ = 25°C, IF = 42A, VDD = 50V  
di/dt = 100A/µs  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
–––  
–––  
–––  
240  
1.0  
V
360  
ns  
nC  
Qrr  
––– 1230 1850  
2
www.irf.com  
IRFP4232PbF  
1000  
100  
10  
1000  
100  
10  
VGS  
15V  
10V  
8.0V  
7.0V  
VGS  
15V  
10V  
8.0V  
7.0V  
TOP  
TOP  
BOTTOM  
BOTTOM  
7.0V  
7.0V  
60µs PULSE WIDTH  
Tj = 25°C  
≤
60µs PULSE WIDTH  
Tj = 175°C  
≤
1
1
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1000  
4.0  
3.0  
2.0  
1.0  
0.0  
I
= 42A  
D
V
= 10V  
GS  
100  
10  
1
T
= 175°C  
J
T
= 25°C  
J
V
= 30V  
DS  
≤ 60µs PULSE WIDTH  
4.0  
5.0  
6.0  
7.0  
8.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160 180  
V , Gate-to-Source Voltage (V)  
GS  
T
, Junction Temperature (°C)  
J
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance vs. Temperature  
1000  
1200  
L = 220nH  
C = Variable  
L = 220nH  
C = 0.4µF  
100°C  
800  
1000  
800  
600  
400  
200  
100°C  
25°C  
25°C  
600  
400  
200  
0
160  
170  
180  
190  
200  
210  
220  
230  
150  
160  
170  
180  
190  
200  
I
Peak Drain Current (A)  
V
Drain-to -Source Voltage (V)  
D,  
DS,  
Fig 6. Typical EPULSE vs. Peak Drain Current  
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage  
www.irf.com  
3
IRFP4232PbF  
1600  
1000.0  
100.0  
10.0  
1.0  
L = 220nH  
1400  
C= 0.4µF  
C= 0.3µF  
1200  
T
= 175°C  
J
C= 0.2µF  
1000  
800  
600  
400  
200  
0
T
= 25°C  
J
V
= 0V  
GS  
0.1  
25  
50  
75  
100  
125  
150  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Temperature (°C)  
V
, Source-to-Drain Voltage (V)  
SD  
Fig 7. Typical EPULSE vs.Temperature  
Fig 8. Typical Source-Drain Diode Forward Voltage  
12000  
10000  
8000  
6000  
4000  
2000  
0
20  
V
C
= 0V,  
f = 1 MHZ  
GS  
I
= 42A  
D
= C + C , C SHORTED  
iss  
gs  
gd ds  
V
= 200V  
DS  
C
= C  
rss  
gd  
16  
12  
8
VDS= 125V  
VDS= 50V  
C
= C + C  
oss  
ds  
gd  
Ciss  
4
Coss  
Crss  
0
0
40  
80  
120 160 200 240 280  
1
10  
100  
1000  
Q
Total Gate Charge (nC)  
G
V
, Drain-to-Source Voltage (V)  
DS  
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage  
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage  
60  
54  
48  
42  
36  
30  
24  
18  
12  
6
1000  
OPERATION IN THIS AREA  
LIMITED BY R  
(on)  
DS  
100  
10  
1
1µsec  
10µsec  
100µsec  
Tc = 25°C  
Tj = 175°C  
Single Pulse  
0
0.1  
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
1000  
T
, CaseTemperature (°C)  
V
, Drain-to-Source Voltage (V)  
C
DS  
Fig 12. Maximum Safe Operating Area  
Fig 11. Maximum Drain Current vs. Case Temperature  
4
www.irf.com  
IRFP4232PbF  
1000  
800  
600  
400  
200  
0
600  
500  
400  
300  
200  
100  
0
I
I
= 42A  
D
D
TOP  
12A  
18A  
BOTTOM 42A  
T
= 25°C  
J
T
= 125°C  
J
4.0  
6.0  
8.0  
10.0  
25  
50  
75  
100  
125  
150  
175  
V
, Gate-to-Source Voltage (V)  
Starting T , Junction Temperature (°C)  
GS  
J
Fig 13. On-Resistance Vs. Gate Voltage  
Fig 14. Maximum Avalanche Energy Vs. Temperature  
5.5  
200  
ton= 1µs  
Duty cycle = 0.25  
5.0  
4.5  
Half Sine Wave  
Square Pulse  
160  
I
= 250µA  
D
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
120  
80  
40  
0
-75 -50 -25  
0
J
25 50 75 100 125 150 175  
, Temperature ( °C )  
25  
50  
75  
100  
125  
150  
175  
T
Case Temperature (°C)  
Fig 16. Typical Repetitive peak Current vs.  
Fig 15. Threshold Voltage vs. Temperature  
Case temperature  
1
D = 0.50  
0.1  
0.20  
0.10  
0.05  
R1  
R1  
R2  
R2  
R3  
R3  
R4  
R4  
Ri (°C/W) τi (sec)  
0.0091  
0.0487  
0.1264  
0.1660  
0.000003  
0.000071  
0.001743  
0.024564  
0.01  
0.001  
τ
0.02  
0.01  
τ
J τJ  
τ
Cτ  
1τ1  
Ci= τi/Ri  
τ
τ
τ
2 τ2  
3τ3  
4τ4  
SINGLE PULSE  
( THERMAL RESPONSE )  
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
0.0001  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
t
, Rectangular Pulse Duration (sec)  
1
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRFP4232PbF  
Driver Gate Drive  
P.W.  
P.W.  
Period  
D.U.T  
Period  
D =  
+
*
=10V  
V
GS  
ƒ
Circuit Layout Considerations  
• Low Stray Inductance  
• Ground Plane  
• Low Leakage Inductance  
Current Transformer  
-
D.U.T. I Waveform  
SD  
+
‚
-
Reverse  
Recovery  
Current  
Body Diode Forward  
„
Current  
di/dt  
-
+
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  

V
DD  
VDD  
Re-Applied  
Voltage  
• di/dt controlled by RG  
RG  
+
-
Body Diode  
Inductor Current  
Forward Drop  
• Driver same type as D.U.T.  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
I
SD  
Ripple ≤ 5%  
* VGS = 5V for Logic Level Devices  
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs  
V
(BR)DSS  
15V  
t
p
DRIVER  
+
L
V
DS  
D.U.T  
AS  
R
G
V
DD  
-
I
A
V
2
GS  
Ω
0.01  
t
p
I
AS  
Fig 19b. Unclamped Inductive Waveforms  
Fig 19a. Unclamped Inductive Test Circuit  
Id  
Vds  
Vgs  
L
VCC  
DUT  
Vgs(th)  
0
1K  
Qgs1  
Qgs2  
Qgd  
Qgodr  
Fig 20a. Gate Charge Test Circuit  
Fig 20b. Gate Charge Waveform  
6
www.irf.com  
IRFP4232PbF  
Fig 21b. tst Test Waveforms  
Fig 21a. tst and EPULSE Test Circuit  
Fig 21c. EPULSE Test Waveforms  
RD  
V
DS  
VDS  
90%  
VGS  
D.U.T.  
RG  
+VDD  
-
10%  
VGS  
V
GS  
PulseWidth ≤ 1 µs  
Duty Factor ≤ 0.1 %  
t
t
r
t
t
f
d(on)  
d(off)  
Fig 22a. Switching Time Test Circuit  
Fig 22b. Switching Time Waveforms  
www.irf.com  
7
IRFP4232PbF  
TO-247AC Package Outline  
Dimensions are shown in millimeters (inches)  
TO-247AC Part Marking Information  
TO-247AC package is not recommended for Surface Mount Application.  
Notes:  
 Repetitive rating; pulse width limited by  
max. junction temperature.  
‚ Starting TJ = 25°C, L = 0.25mH,  
RG = 25Ω, IAS = 42A.  
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.  
„ R is measured at TJ of approximately 90°C.  
θ
ꢀ Half sine wave with duty cycle = 0.25, ton=1µsec.  
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/  
Data and specifications subject to change without notice.  
This product has been designed for the Consumer market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.09/2007  
8
www.irf.com  

相关型号：

IRFP4242PBF

 PDP MOSFET
INFINEON

IRFP430

 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-247VAR
ETC

IRFP431

 TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-247VAR
ETC

IRFP4310Z

 N-Channel MOSFET Transistor
ISC

IRFP4310ZPBF

 HEXFET Power MOSFET
INFINEON

IRFP432

 Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
SAMSUNG

IRFP4321PBF

 HEXFET Power MOSFET
INFINEON

IRFP433

 TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-247VAR
ETC

IRFP4332

 The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. 
INFINEON

IRFP4332PBF

 PDP SWITCH
INFINEON

IRFP4368

 N-Channel MOSFET Transistor
ISC

IRFP4368

 The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. 
INFINEON
©2020 ICPDF网 联系我们和版权申明