IRFP4228PBF [INFINEON]
pop switch; 弹出开关
| 型号： | IRFP4228PBF |
| 厂家： | 
Infineon |
| 描述： | pop switch |
| 文件： | 总8页 (文件大小：672K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97229
IRFP4228PbF
PDP SWITCH
Features
Key Parameters
l
Advanced Process Technology
Key Parameters Optimized for PDP
Sustain, Energy Recovery and Pass
Switch Applications
l
VDS min
150
180
12
V
V
m
V
DS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
TJ max
l
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy
Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
170
175
A
°C
l
l
D
D
l
Short Fall & Rise Times for Fast Switching
S
l
175°C Operating Junction Temperature for
Improved Ruggedness
D
G
G
l
Repetitive Avalanche Capability for
Robustness and Reliability
TO-247AC
S
G
D
S
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Max.
±30
Parameter
Units
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
78
A
55
330
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
170
Repetitive Peak Current
310
Power Dissipation
W
150
Power Dissipation
2.0
Linear Derating Factor
W/°C
°C
TJ
-40 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lb in (1.1N m)
N
Thermal Resistance
Parameter
Typ.
Max.
0.49
–––
40
Units
Junction-to-Case
RθJC
–––
0.24
–––
°C/W
Rθ
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
CS
RθJA
Notes through are on page 8
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1
06/26/06
IRFP4228PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I = 1mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
150
–––
–––
3.0
–––
150
12
–––
V
V
/ T
∆
J
∆Β
––– mV/°C
D
DSS
VGS = 10V, ID = 33A
RDS(on)
VGS(th)
15.5
5.0
mΩ
V
VDS = VGS, ID = 250µA
–––
-14
–––
–––
–––
–––
–––
72
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
170
–––
–––
100
––– mV/°C
VDS = 150V, VGS = 0V
20
1.0
µA
mA
nA
VDS = 150V, VGS = 0V, TJ = 125°C
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
–––
110
–––
–––
VGS = -20V
VDS = 25V, ID = 50A
gfs
Qg
Qgd
tst
S
VDD = 120V, ID = 50A, VGS = 10V
nC
Gate-to-Drain Charge
26
VDD = 120V, VGS = 15V, RG= 5.1Ω
Shoot Through Blocking Time
–––
ns
µJ
L = 220nH, C= 0.3µF, VGS = 15V
–––
–––
58
–––
–––
EPULSE
VDS = 120V, RG= 5.1Ω, TJ = 25°C
Energy per Pulse
L = 220nH, C= 0.3µF, VGS = 15V
110
VDS = 120V, RG= 5.1Ω, TJ = 100°C
VGS = 0V
Ciss
Input Capacitance
––– 4530 –––
VDS = 25V
Coss
Crss
Output Capacitance
–––
–––
–––
–––
550
100
480
4.5
–––
–––
–––
–––
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
VGS = 0V, VDS = 0V to 120V
Coss eff.
LD
Between lead,
D
S
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Avalanche Characteristics
Typ.
–––
–––
180
–––
Max.
210
33
Parameter
Units
mJ
mJ
V
EAS
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Avalanche Current
EAR
VDS(Avalanche)
IAS
–––
50
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS @ TC = 25°C
ISM
MOSFET symbol
Continuous Source Current
–––
–––
78
showing the
(Body Diode)
A
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
330
TJ = 25°C, IS = 50A, VGS = 0V
TJ = 25°C, IF = 50A, VDD = 50V
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
76
1.3
110
350
V
ns
nC
Qrr
230
2
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IRFP4228PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM
BOTTOM
1
5.0V
5.0V
0.1
0.01
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 175°C
≤
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 50A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 25V
DS
≤
60µs PULSE WIDTH
0.1
3
4
5
6
7
8
9
10 11
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
120
120
L = 220nH
C = Variable
L = 220nH
C = 0.3µF
100°C
110
110
100
90
80
70
60
50
40
30
20
100
90
80
70
60
50
40
30
20
10
100°C
25°C
25°C
85 90 95 100 105 110 115 120 125
60 65 70 75 80 85 90 95 100 105
V
Drain-to-Source Voltage (V)
I
, Peak Drain Current (A)
DS,
D
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
Fig 6. Typical EPULSE vs. Drain Current
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3
IRFP4228PbF
140
1000
100
10
L = 220nH
120
T
= 175°C
J
100
C = 0.3µF
80
T
= 25°C
J
60
C = 0.2µF
40
1
C = 0.1µF
20
V
= 0V
1.4
GS
0
0.1
20
40
60
80
100 120 140 160
0.2
0.4
0.6
0.8
1.0
1.2
1.6
V
, Source-to-Drain Voltage (V)
SD
Temperature (°C)
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 7. Typical EPULSE vs.Temperature
12.0
100000
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I = 50A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
V
= 120V
= 75V
= 30V
DS
= C
10.0
8.0
6.0
4.0
2.0
0.0
rss
oss
gd
V
DS
= C + C
ds
gd
V
DS
C
iss
C
oss
C
rss
10
0
10 20 30 40 50 60 70 80
1
10
100
1000
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
90
80
70
60
50
40
30
20
10
0
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
100
10
1
10msec
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
25
50
T
75
100
125
150
175
1
10
100
1000
, Junction Temperature (°C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig 12. Maximum Safe Operating Area
Fig 11. Maximum Drain Current vs. Case Temperature
4
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IRFP4228PbF
60
50
40
30
20
10
0
900
800
700
600
500
400
300
200
100
0
I
I
= 50A
D
D
TOP
9.0A
19A
BOTTOM 50A
T
= 125°C
J
T
= 25°C
12
J
4
6
8
10
14
16
18
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 14. Maximum Avalanche Energy vs. Temperature
Fig 13. On-Resistance vs. Gate Voltage
250
5.0
4.5
4.0
3.5
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
Square Pulse
200
150
100
50
I
= 250µA
D
3.0
2.5
2.0
1.5
1.0
0
25
50
75
100
125
150
175
-75 -50 -25
0
25 50 75 100 125 150 175
Case Temperature (°C)
T , Temperature ( °C )
J
Fig 16. Typical Repetitive peak Current vs.
Fig 15. Threshold Voltage vs. Temperature
Case temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
0.02
0.01
Ri (°C/W) τi (sec)
0.0768 0.000083
τ
J τJ
τ
τ
Cτ
τ
1τ1
τ
2 τ2
3τ3
0.2337 0.001175
0.1797 0.008326
Ci= τi/Ri
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP4228PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
***
V
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
.2µF
Vgs
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
Vgs(th)
3mA
I
I
D
G
Current Sampling Resistors
Qgs1
Qgs2
Qgd
Qgodr
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
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IRFP4228PbF
A
PULSE A
PULSE B
RG
C
DRIVER
L
VCC
B
Ipulse
DUT
RG
tST
Fig 21b. tst Test Waveforms
Fig 21a. tst and EPULSE Test Circuit
Fig 21c. EPULSE Test Waveforms
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7
IRFP4228PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.173mH, RG = 25Ω, IAS = 50A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ Half sine wave with duty cycle = 0.25, ton=1µsec.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/06
8
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