2SC4115STPQ [ROHM]
Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN;型号: | 2SC4115STPQ |
厂家: | ROHM |
描述: | Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN 晶体 小信号双极晶体管 |
文件: | 总3页 (文件大小:160K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Low Frequency Transistor (20V, 3A)
2SC4115S
zFeatures
zDimensions(Unit:mm)
1) Low VCE(sat).
2SC4115S
VCE(sat) = 0.2V(Typ.)
4
0.2
2 0.2
(IC / IB = 2A / 0.1A)
2) Excellent current gain characteristics.
3) Complements the 2SA1585S.
+0.15
−0.05
zStructure
0.45
Epitaxial planar type
NPN silicon transistor
+0.15
−0.05
+0.4
0.45
2.5
0.5
−0.1
5
zAbsolute maximum ratings (Ta=25°C)
(1) (2) (3)
Parameter
Symbol
Limits
Unit
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
40
V
20
V
V
Denotes hFE
∗
6
2
A (DC)
A (Pulse)
W
Collector current
IC
5
0.4
∗
Collector power dissipation
Junction temperature
Storage temperature
PC
Tj
150
°C
Tstg
−55 to +150
°C
Single pulse Pw=10ms
∗
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
40
20
6
I
I
I
C
=50
=1mA
=50
µ
A
−
−
V
C
−
−
V
E
µ
A
I
CBO
EBO
CE(sat)
FE
−
−
0.1
0.1
0.5
390
−
µ
A
A
V
CB=30V
EB=5V
Emitter cutoff current
I
−
−
µ
V
Collector-emitter saturation voltage
DC current transfer ratio
V
−
120
−
0.2
−
V
IC/IB=2A/0.1A
∗
h
−
V
V
V
CE=2V, I
C
=0.1A
= −0.5A, f=100MHz
=0A, f=1MHz
f
T
290
25
MHz
pF
CE=2V, I
E
Transition frequency
Output capacitance
Cob
−
−
CE=10V, I
E
Measured using pulse current.
∗
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2009.11 - Rev.B
1/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
2SC4115S
Data Sheet
zPackaging specifications and hFE
Package
Code
Taping
TP
Basic ordering
unit (pieces)
5000
hFE
Type
2SC4115S
QRS
hFE values are classified as follows :
Item
Q
R
S
hFE
120 to 270 180 to 390 270 to 560
zElectrical characteristic curves
5
4
3
2
2
1.6
1.2
0.8
10
50mA
45mA
40mA
Ta=25°C
Ta=25°C
V
CE=2V
20mA
18mA
16mA
14mA
12mA
10mA
35mA
30mA
5
8mA
2
1
25mA
20mA
6mA
4mA
2mA
Ta=100°C
25°C
−40°C
0.5
15mA
10mA
0.2
0.1
0.05
0.02
5mA
0.01
5m
1
0
0.4
0
2m
1m
0
I =0A
B
I
B=0A
0
1
2
3
4
5
0.2 0.4 0.6 0.8 1.0
1.2 1.4
0
0.2
0.4
0.6
0.8
1.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics (
)
characteristics (
)
1
2
I
C/I
B=10
5000
lC/lB=20
V
CE=
2V
0.5
Ta=100°C
1
2000
1000
500
25°C
0.5
−40°C
0.2
0.1
Ta=100°C
25°C
0.2
−40°C
Ta=100°C
25°C
0.05
0.1
200
100
50
−40°C
50m
0.02
0.01
5m
20m
10m
5m
20
2m
1m
10
5
2m
1m 2m 5m10m20m50m0.1 0.2 0.5 1
2
5
10
1m 2m 5m0.010.02 0.05
5 10
0.10.2 0.5
1
2
1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
COLLECTOR CURRENT : I (A)
C
COLLECTOR CURRENT : I (A)
C
COLLECTOR CURRENT : I
C
(A)
Fig.5 Collector-emitter
Fig.6 Collector-emitter
Fig.4 DC current gain vs.
collector current
saturation voltage vs.
collector current (
saturation voltage vs.
collector current (
)
)
1000
500
1000
500
2
Ta=25°C
CE=2V
Ta=25°C
f=1MHz
I
C
/I
B
=50
V
1
I
I
E
=0A
=0A
C
200
100
50
0.5
C
ob
200
0.2
Ta=100°C
25°C
−40°C
0.1
100
50
20
50m
C
ob
10
5
20m
10m
5m
20
10
2
1
2m
−1 −2 −5 −10 −20 −50−100 −200 −500 −1000
0.1 0.2 0.5
1
2
5
10 20
50
1m 2m 5m10m20m50m0.1 0.2 0.5 1
2
5
10
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR CURRENT : I (A)
C
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Fig.7 Collector-emitter
saturation voltage vs.
collector current (
Emitter input capacitance vs.
emitter-base voltage
)
www.rohm.com
2009.11 - Rev.B
2/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
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