2SC4115STPQ [ROHM]

Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN;
2SC4115STPQ
型号: 2SC4115STPQ
厂家: ROHM    ROHM
描述:

Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN

晶体 小信号双极晶体管
文件: 总3页 (文件大小:160K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Low Frequency Transistor (20V, 3A)  
2SC4115S  
zFeatures  
zDimensions(Unit:mm)  
1) Low VCE(sat).  
2SC4115S  
VCE(sat) = 0.2V(Typ.)  
4
0.2  
2 0.2  
IC / IB = 2A / 0.1A)  
2) Excellent current gain characteristics.  
3) Complements the 2SA1585S.  
+0.15  
0.05  
zStructure  
0.45  
Epitaxial planar type  
NPN silicon transistor  
+0.15  
0.05  
+0.4  
0.45  
2.5  
0.5  
0.1  
5
zAbsolute maximum ratings (Ta=25°C)  
(1) (2) (3)  
Parameter  
Symbol  
Limits  
Unit  
(1) Emitter  
(2) Collector  
(3) Base  
ROHM : SPT  
EIAJ : SC-72  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
VCBO  
VCEO  
VEBO  
40  
V
20  
V
V
Denotes hFE  
6
2
A (DC)  
A (Pulse)  
W
Collector current  
IC  
5
0.4  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
Tj  
150  
°C  
Tstg  
55 to +150  
°C  
Single pulse Pw=10ms  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
V
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
40  
20  
6
I
I
I
C
=50  
=1mA  
=50  
µ
A
V
C
V
E
µ
A
I
CBO  
EBO  
CE(sat)  
FE  
0.1  
0.1  
0.5  
390  
µ
A
A
V
CB=30V  
EB=5V  
Emitter cutoff current  
I
µ
V
Collector-emitter saturation voltage  
DC current transfer ratio  
V
120  
0.2  
V
IC/IB=2A/0.1A  
h
V
V
V
CE=2V, I  
C
=0.1A  
= −0.5A, f=100MHz  
=0A, f=1MHz  
f
T
290  
25  
MHz  
pF  
CE=2V, I  
E
Transition frequency  
Output capacitance  
Cob  
CE=10V, I  
E
Measured using pulse current.  
www.rohm.com  
2009.11 - Rev.B  
1/2  
c
2009 ROHM Co., Ltd. All rights reserved.  
2SC4115S  
Data Sheet  
zPackaging specifications and hFE  
Package  
Code  
Taping  
TP  
Basic ordering  
unit (pieces)  
5000  
hFE  
Type  
2SC4115S  
QRS  
hFE values are classified as follows :  
Item  
Q
R
S
hFE  
120 to 270 180 to 390 270 to 560  
zElectrical characteristic curves  
5
4
3
2
2
1.6  
1.2  
0.8  
10  
50mA  
45mA  
40mA  
Ta=25°C  
Ta=25°C  
V
CE=2V  
20mA  
18mA  
16mA  
14mA  
12mA  
10mA  
35mA  
30mA  
5
8mA  
2
1
25mA  
20mA  
6mA  
4mA  
2mA  
Ta=100°C  
25°C  
40°C  
0.5  
15mA  
10mA  
0.2  
0.1  
0.05  
0.02  
5mA  
0.01  
5m  
1
0
0.4  
0
2m  
1m  
0
I =0A  
B
I
B=0A  
0
1
2
3
4
5
0.2 0.4 0.6 0.8 1.0  
1.2 1.4  
0
0.2  
0.4  
0.6  
0.8  
1.0  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
BASE TO EMITTER VOLTAGE : VBE (V)  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
Fig.3 Grounded emitter output  
Fig.1 Grounded emitter propagation  
characteristics  
Fig.2 Grounded emitter output  
characteristics (  
)
characteristics (  
)
1
2
I
C/I  
B=10  
5000  
lC/lB=20  
V
CE=  
2V  
0.5  
Ta=100°C  
1
2000  
1000  
500  
25°C  
0.5  
40°C  
0.2  
0.1  
Ta=100°C  
25°C  
0.2  
40°C  
Ta=100°C  
25°C  
0.05  
0.1  
200  
100  
50  
40°C  
50m  
0.02  
0.01  
5m  
20m  
10m  
5m  
20  
2m  
1m  
10  
5
2m  
1m 2m 5m10m20m50m0.1 0.2 0.5 1  
2
5
10  
1m 2m 5m0.010.02 0.05  
5 10  
0.10.2 0.5  
1
2
1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5  
1
2
5
10  
COLLECTOR CURRENT : I (A)  
C
COLLECTOR CURRENT : I (A)  
C
COLLECTOR CURRENT : I  
C
(A)  
Fig.5 Collector-emitter  
Fig.6 Collector-emitter  
Fig.4 DC current gain vs.  
collector current  
saturation voltage vs.  
collector current (  
saturation voltage vs.  
collector current (  
)
)
1000  
500  
1000  
500  
2
Ta=25°C  
CE=2V  
Ta=25°C  
f=1MHz  
I
C
/I  
B
=50  
V
1
I
I
E
=0A  
=0A  
C
200  
100  
50  
0.5  
C
ob  
200  
0.2  
Ta=100°C  
25°C  
40°C  
0.1  
100  
50  
20  
50m  
C
ob  
10  
5
20m  
10m  
5m  
20  
10  
2
1
2m  
1 2 5 10 20 50100 200 500 1000  
0.1 0.2 0.5  
1
2
5
10 20  
50  
1m 2m 5m10m20m50m0.1 0.2 0.5 1  
2
5
10  
EMITTER CURRENT : I  
E
(mA)  
COLLECTOR TO BASE VOLTAGE : VCB (V)  
EMITTER TO BASE VOLTAGE : VEB (V)  
COLLECTOR CURRENT : I (A)  
C
Fig.8 Gain bandwidth product vs.  
emitter current  
Fig.9 Collector output capacitance vs.  
collector-base voltage  
Fig.7 Collector-emitter  
saturation voltage vs.  
collector current (  
Emitter input capacitance vs.  
emitter-base voltage  
)
www.rohm.com  
2009.11 - Rev.B  
2/2  
c
2009 ROHM Co., Ltd. All rights reserved.  
Notice  
N o t e s  
No copying or reproduction of this document, in part or in whole, is permitted without the  
consent of ROHM Co.,Ltd.  
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter  
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which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contained herein  
illustrate the standard usage and operations of the Products. The peripheral conditions must  
be taken into account when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document.  
However, should you incur any damage arising from any inaccuracy or misprint of such  
information, ROHM shall bear no responsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or  
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The Products specified in this document are intended to be used with general-use electronic  
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