2SC4116 [SECOS]
NPN Plastic-Encapsulate Transistor; NPN塑封装晶体管
| 型号： | 2SC4116 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic-Encapsulate Transistor |
| 文件： | 总3页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4116
0.15A , 60V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
FEATURES
High voltage and high current.
Excellent hFE linearity.
High hFE.
Low noise.
Complementary to 2SA1586
A
L
3
3
Top View
E
C B
1
1
2
2
K
F
D
CLASSIFICATION OF hFE
H
J
G
Product-Rank 2SC-4116-O 2SC-4116-Y 2SC-4116-GR 2SC-4116-BL
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
0.100 REF.
0.525 REF.
Range
70~140
LO
120~240
LY
200~400
LG
350~700
LL
A
B
C
D
E
F
1.80
1.80
1.15
0.80
1.20
0.20
2.20
2.45
1.35
1.10
1.40
0.40
G
H
J
K
L
Marking
0.08
-
0.25
-
0.650 TYP.
PACKAGE INFORMATION
Collector
Package
MPQ
LeaderSize
7’ inch
SOT-323
3K
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Collector-Base Voltage
60
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
5
150
V
Collector Current
mA
mW
°C
Collector Power Dissipation
Junction & Storage temperature
PC
100
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Symbol Min.
Typ.
Max.
-
Unit
V
Test Condition
IC=100μA, IE=0
IC=1mA, IB=0
V(BR)CBO
60
50
5
-
-
-
-
-
-
-
-
-
Collector-Emitter Breakdown Voltage V(BR)CEO
-
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-off Current
V(BR)EBO
ICBO
-
V
IE=100μA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
-
0.1
0.1
700
0.25
-
μA
μA
IEBO
-
DC Current Gain
hFE
70
-
VCE=6V, IC=2mA
IC=100mA, IB=10mA
Collector-Base Saturation Voltage
Transition Frequency
Collector Output Capacitance
VCE(sat)
fT
Cob
V
80
-
GHz VCE=10V, IC=1mA
pF
3.5
VCB=10V, IE=0, f=1MHz
VCE=6V, IC=0.1mA, f=1KHz,
Rg=10KΩ
Noise Figure
NF
-
-
10
dB
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Mar-2011 Rev. A
Page 1 of 3
2SC4116
0.15A , 60V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Mar-2011 Rev. A
Page 2 of 3
2SC4116
0.15A , 60V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Mar-2011 Rev. A
Page 3 of 3
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