2SC4115_15 [SECOS]
NPN Plastic Encapsulated Transistor;
| 型号： | 2SC4115_15 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic Encapsulated Transistor |
| 文件： | 总1页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4115
3A , 40V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
FEATURES
ꢀ
ꢀ
ꢀ
Small Flat Package
General Purpose Application
Low VCE(sat).VCE(sat) = 0.2V (Typ.)(I
4
C
/ IB = 2A / 0.1A)
1
2
3
B
C
A
E
E
CLASSIFICATION OF hFE(1)
C
Product-Rank
2SC4115-Q
120~270
4115Q
2SC4115-R
180~390
4115R
2SC4115-S
270~560
4115S
B
D
K
Range
F
G
H
Marking
J
L
Collector
PACKAGE INFORMATION
2
Millimeter
Millimeter
REF.
REF.
Package
MPQ
Leader Size
Min.
Max.
4.60
4.25
1.60
2.60
Min.
Max.
A
B
C
D
4.40
3.94
1.40
2.25
G
H
J
0.40
0.58
1
Base
1.50 TYP
3.00 TYP
SOT-89
1K
7 inch
K
0.32
0.52
E
F
1.50
0.89
1.85
1.20
L
0.35
0.44
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
40
20
6
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current-Continuous
Collector Power Dissipation
Junction & Storage Temperature
3
A
PC
500
mW
°C
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min.
40
Typ.
Max. Unit
Test conditions
-
-
-
V
V
V
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
20
-
6
-
-
-
-
-
0.1
0.1
560
0.5
-
µA VCB=30V, IE=0
µA VEB=5V, IC=0
VCE=2V, IC=100mA
Emitter Cut-Off Current
IEBO
-
DC Current Gain
hFE
120
-
-
-
Collector-Emitter Saturation voltage
Transition Frequency
VCE(sat)
fT
V
IC=2A, IB=100mA
200
290
MHz VCE=2V,IC=500mA,f=100MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
20-Mar-2012 Rev. A
Page 1 of 1
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