2SC4116 [KEXIN]
Silicon NPN Epitaxial; NPN硅外延![2SC4116](http://pdffile.icpdf.com/pdf1/p00153/img/icpdf/2SC4116_846999_icpdf.jpg)
型号: | 2SC4116 |
厂家: | ![]() |
描述: | Silicon NPN Epitaxial |
文件: | 总1页 (文件大小:47K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SMD Type
Transistors
Silicon NPN Epitaxial
2SC4116
Features
High voltage and high current: VCEO = 50 V, IC = 150 mA (max).
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ).
High hFE: hFE = 70 700.
Low noise: NF = 1dB (typ.), 10dB (max).
Small package.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
60
Collector-emitter voltage
Emitter-base voltage
Collector current
50
V
5
150
V
mA
mA
mW
Base current
IB
30
Collector power dissipation
Junction temperature
Storage temperature
PC
100
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VCB = 60V, IE = 0
Min
Typ
0.1
Max
0.1
Unit
ìA
Collector cut-off current
ICBO
IEBO
hFE
Emitter cut-off current
DC current gain
VEB = 5V, IC = 0
0.1
700
0.25
ìA
VCE = 6V, IC = 2mA
70
80
Collector-emitter saturation voltage
Transition frequency
VCE (sat) IC = 100mA, IB = 10mA
V
fT
VCE = 10V, IC = 1mA
MHz
pF
Collector output capacitance
Collector-emitter on resistance
Cob
VCB = 10V, IE = 0, f = 1MHz
2.0
1.0
3.5
10
VCE = 6V, IC = 0.1mA, f = 1kHz, Rg =
10kÙ
NF
dB
hFE Classification
Marking
hFE
LO
LY
LG
200 400
LL
70 140
120 240
350 700
1
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