2SC4116 [WEITRON]
General Purpose Transistor NPN Silicon; 通用晶体管NPN硅
| 型号： | 2SC4116 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | General Purpose Transistor NPN Silicon |
| 文件： | 总3页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4116
General Purpose Transistor
NPN Silicon
COLLECTOR
3
3
P b
Lead(Pb)-Free
1
1
2
BASE
2
SOT-323(SC-70)
EMITTER
FEATURES
* High voltage and high current
* Excellent hFE linearity
* High hFE
* Low noise
* Complementary to 2SA1586
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter
Symbol
Value
60
Units
V
VCBO
Collector-Base Voltage
VCEO
VEBO
IC
50
Collector-Emitter Voltage
Emitter-Base Voltage
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
150
100
150
mA
mW
℃
PC
TJ
-55 to +150
Junction and Storage Temperature
Tstg
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
60
50
5
TYP
MAX
UNIT
V
-
-
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=100μA,IE=0
IC=1mA,IB=0
V
-
-
-
-
-
-
-
IE=100μA,IC=0
VCB=60V,IE=0
V
-
0.1
0.1
700
0.25
-
μA
μA
IEBO
VEB=5V,IC=0
-
Emitter cut-off current
DC current gain
hFE
VCE=6V,IC=2mA
IC=100mA,IB=10mA
VCE=10V,IC=1mA,
70
-
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
-
-
-
V
80
-
MHz
pF
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
VCE=6V,Ic=0.1mA,
f=1KHZ,Rg=10KΩ
3.5
10
Noise figure
NF
dB
-
-
CLASSIFICATION OF hFE
Rank
O
70-140
LO
Y
120-240
LY
GR
BL
Range
Marking
200-400
LG
350-700
LL
WEITRON
http://www.weitron.com.tw
1/3
25-Jun-08
2SC4116
WEITRON
WEITRON
http://www.weitron.com.tw
2/3
25-Jun-08
2SC4116
WEITRON
WEITRON
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