UPD5750T7D-E4A [RENESAS]
SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function; 的SiGe BiCMOS集成电路宽带LNA IC通过功能
| 型号： | UPD5750T7D-E4A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function |
| 文件： | 总16页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
μPD5750T7D
R09DS0009EJ0100
Rev.1.00
SiGe BiCMOS Integrated Circuit
Feb 24, 2011
Wide Band LNA IC with Through Function
DESCRIPTION
The μPD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application. This
IC exhibits low noise figure and high power gain characteristics. The μPD5750T7D has an LNA pass-through function
(bypass function) to prevent the degradation of the received signal quality at the strong electric field, and achieve the
high reception sensitivity and low power consumption.
The package is a 6-pin WLBGA (Wafer Level Ball Grid Array) (T7D) suitable for surface mount.
This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics.
FEATURES
•
•
•
Low voltage operation
Low mode control voltage
Low current consumption
: VCC = 1.8 V TYP.
: Vcont (H) = 1.0 V to VCC, Vcont (L) = 0 to 0.4 V
: ICC = 3.1 mA TYP. @VCC = 1.8 V (LNA-mode)
: ICC = 1 μA MAX. @VCC = 1.8 V (Bypass-mode)
: NF = 1.5 dB TYP. @VCC = 1.8 V, f = 470 MHz
: NF = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz
: GP = 13.5 dB TYP. @VCC = 1.8 V, f = 470 MHz
: GP = 12.5 dB TYP. @VCC = 1.8 V, f = 770 MHz
: Lins = 1.2 dB TYP. @VCC = 1.8 V, f = 470 MHz
: Lins = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz
•
•
•
Low noise
(LNA-mode)
High gain
(LNA-mode)
Low insertion loss
(Bypass-mode)
•
•
High-density surface mounting : 6-pin WLBGA (0.73 × 0.48 × 0.26 mm)
Included protection circuit for ESD
APPLICATIONS
•
Low noise amplifier for the portable and mobile digital TV system, etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
• Embossed tape 8 mm wide
• Pin A3, B3 face the perforation side of the tape
• Qty 10 kpcs/reel
μPD5750T7D-E4A μPD5750T7D-E4A-A 6-pin WLBGA
A
(T7D)
(Pb-Free)
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5750T7D
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 1 of 14
μPD5750T7D
PIN CONNECTIONS AND MARKING
(Top View)
(Bottom View)
Pin No
A1
Pin Name
INPUT
GND1
OUTPUT
Vcont
A3
A2
A1
B3
B2
B1
B3
B2
B1
A3
A2
A1
A2
A3
B1
B2
GND2
VCC
B3
INTERNAL BLOCK DIAGRAM
A1
A2
A3
Controller
B1
B2
B3
TRUTH TABLE
Vcont
Gain
High
Low
Mode
H
L
LNA-mode
Bypass-mode
Remark “H” = Vcont (H), “L” = Vcont (L)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Supply Voltage
VCC
3.6
V
Mode Control Voltage
Operating Ambient Temperature
Storage Temperature
Input Power
Vcont
TA
3.6
V
−40 to +85
−55 to +150
+30
°C
Tstg
°C
Pin
dBm
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Symbol
MIN.
1.6
1.0
0
TYP.
1.8
－
MAX.
Unit
Supply Voltage
VCC
2.0
V
Mode Control Voltage (H)
Mode Control Voltage (L)
Operating Frequency
Vcont (H)
Vcont (L)
f
VCC
0.4
V
－
V
50
－
1 800
+85
+7
MHz
°C
Operating Ambient Temperature
Input Power (LNA-mode)
Input Power (Bypass-mode)
TA
−40
－
－
Pin
－
dBm
dBm
Pin
－
－
+15
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 2 of 14
μPD5750T7D
ELECTRICAL CHARACTERISTICS 1 (DC Characteristics)
(TA = +25°C, VCC = 1.8 V, unless otherwise specified)
Parameter
Circuit Current 1
Symbol
Test Conditions
MIN.
1.6
–
TYP.
3.1
–
MAX.
4.5
1
Unit
mA
μA
μA
μA
ICC
1
2
Vcont = 1.8 V, No Signal (LNA-mode)
Vcont = 0 V, No Signal (Bypass-mode)
Vcont = 1.8 V, No Signal (LNA-mode)
Vcont = 0 V, No Signal (Bypass-mode)
Circuit Current 2
ICC
Mode Control Current 1
Mode Control Current 2
Icont
Icont
1
2
–
20
–
30
1
–
ELECTRICAL CHARACTERISTICS 2 (LNA-mode)
(TA = +25°C, VCC = Vcont = 1.8 V, ZS = ZL = 50 Ω, unless otherwise specified)
Parameter
Power Gain 1
Symbol
Test Conditions
f = 470 MHz, Pin = –30 dBm, excluded
PCB and connector losses
f = 770 MHz, Pin = –30 dBm, excluded
PCB and connector losses Note 1
f = 470 MHz, excluded PCB and
connector losses
f = 770 MHz, excluded PCB and
connector losses
MIN.
TYP.
MAX.
Unit
GP1
10.5
13.5
16.5
dB
Note 1
Power Gain 2
Noise Figure 1
Noise Figure 2
GP2
NF1
NF2
9.5
–
12.5
1.5
15.5
2.0
dB
dB
dB
Note 2
–
1.4
2.0
Note 2
Output Return Loss 1
RLout
RLout
1
2
f = 470 MHz, Pin = –30 dBm
f = 770 MHz, Pin = –30 dBm
f1 = 470 MHz, f2 = 471 MHz,
Pin = –30 dBm
6.5
6.0
8.5
8.0
–11
–
–
–
dB
dB
Output Return Loss 2
Input 3rd Order Intercept Point 1
IIP31
–15
dBm
f1 = 770 MHz, f2 = 771 MHz,
Pin = –30 dBm
Input 3rd Order Intercept Point 2
IIP32
–12
–8
–
dBm
Notes: 1. Input-output PCB and connector losses : 0.20 dB (at 470 MHz), 0.27 dB (at 770 MHz)
2. Input PCB and connector losses : 0.10 dB (at 470 MHz), 0.14 dB (at 770 MHz)
ELECTRICAL CHARACTERISTICS 3 (Bypass-mode)
(TA = +25°C, VCC = 1.8 V, Vcont = 0 V, ZS = ZL = 50 Ω, unless otherwise specified)
Parameter
Insertion Loss 1
Symbol
Test Conditions
f = 470 MHz, Pin = –10 dBm, excluded
PCB and connector losses
MIN.
TYP.
MAX.
Unit
Lins1
–
1.2
2.0
dB
Note
f = 770 MHz, Pin = –10 dBm, excluded
Insertion Loss 2
Lins2
–
1.4
2.0
dB
PCB and connector losses
f = 470 MHz, Pin = –10 dBm
f = 770 MHz, Pin = –10 dBm
Note
Input Return Loss 1
RLin1
RLin2
10
10
17
14
–
–
–
–
–
dB
dB
Input Return Loss 2
Output Return Loss 1
Output Return Loss 2
Input 3rd Order Intercept Point
RLout
RLout
IIP3
1
2
f = 470 MHz, Pin = –10 dBm
f = 770 MHz, Pin = –10 dBm
f1 = 770 MHz, f2 = 771 MHz,
Pin = –2.5 dBm
10
17
dB
10
14
dB
+25
+32
dBm
Note: Input-output PCB and connector losses : 0.20 dB (at 470 MHz), 0.27 dB (at 770 MHz)
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 3 of 14
μPD5750T7D
STANDARD CHARACTERISTICS FOR REFERENCE 1 (LNA-mode)
(TA = +25°C, VCC = Vcont = 1.8 V, ZS = ZL = 50 Ω, unless otherwise specified)
Parameter
Symbol
ISL1
ISL2
RLin1
RLin2
Zin1
Test Conditions
f = 470 MHz, Pin = –30 dBm
f = 770 MHz, Pin = –30 dBm
f = 470 MHz, Pin = –30 dBm
f = 770 MHz, Pin = –30 dBm
f = 470 MHz, Pin = –30 dBm
f = 770 MHz, Pin = –30 dBm
f = 470 MHz
Reference Value
Unit
dB
dB
dB
dB
Ω
Isolation 1
Isolation 2
–30
–25
Input Return Loss 1
Input Return Loss 2
Input Impedance 1
Input Impedance 2
Gain 1 dB Compression Output
Power 1
1.7
2.5
Note
Note
0.50 – j 2.01
0.36 – j 1.21
–12
Zin2
Ω
dBm
PO (1 dB)
1
2
Gain 1 dB Compression Output
Power 2
f = 770 MHz
PO (1 dB)
–12
dBm
Note: Calibration reference plane : Device edge side
STANDARD CHARACTERISTICS FOR REFERENCE 2 (Bypass-mode)
(TA = +25°C, VCC = 1.8 V, Vcont = 0 V, ZS = ZL = 50 Ω, unless otherwise specified)
Parameter
Symbol
Test Conditions
Reference Value
Unit
PO (1 dB) f = 770 MHz
+6
dBm
Gain 1 dB Compression Output
Power
TEST CIRCUIT
INPUT
A1
B1
A2
A3
B3
OUTPUT
10 000 pF
10 000 pF
V
cont
V
CC
B2
1 000 pF
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 4 of 14
μPD5750T7D
TYPICAL CHARACTERISTICS 1 (DC Characteristics)
(TA = +25°C, unless otherwise specified)
CIRCUIT CURRENT vs. OPERATING
AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
12
12
10
8
V
CC = Vcont
–40°C
RF = off
10
+25°C
8
6
VCC = 2.0 V
6
1.8 V
TA
= +85°C
4
2
0
4
2
V
CC = Vcont
1.6 V
RF = off
0
–25
0
25
50
75
(°C)
100
–50
0
1
2
3
4
Supply Voltage VCC (V)
Operating Ambient Temperature T
A
MODE CONTROL CURRENT vs.
OPERATING AMBIENT TEMPERATURE
MODE CONTROL CURRENT vs.
SUPPLY VOLTAGE
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
CC = Vcont
RF = off
TA = +85°C
μ
μ
+25°C
V
CC = 2.0 V
1.8 V
–40°C
1.6 V
75
VCC = Vcont
RF = off
0
1
2
3
4
–50
–25
0
25
50
100
Supply Voltage VCC (V)
Operating Ambient Temperature T (°C)
A
CIRCUIT CURRENT vs.
MODE CONTROL VOLTAGE
MODE CONTROL CURRENT vs.
MODE CONTROL VOLTAGE
60
50
40
30
20
10
0
6
5
4
3
2
1
0
V
CC = 1.8 V
V
CC = 1.8 V
RF = off
RF = off
μ
T = +85°C
A
T = +85°C
A
+25°C
+25°C
–40°C
–40°C
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
Mode Control Voltage Vcont (V)
Mode Control Voltage Vcont (V)
Remark The graphs indicate nominal characteristics.
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 5 of 14
μPD5750T7D
TYPICAL CHARACTERISTICS 2 (LNA-mode)
(TA = +25°C, unless otherwise specified)
NOISE FIGURE vs. FREQUENCY
NOISE FIGURE vs. FREQUENCY
3.0
2.5
2.0
1.5
1.0
0.5
0
3.0
V
CC = Vcont
T = +85°C
A
2.5
2.0
1.5
1.0
0.5
0
V
CC = 1.6 V
+25°C
1.8 V
2.0 V
–40°C
VCC = Vcont = 1.8 V
0
500
1 000
1 500 2 000
0
500
1 000
1 500
2 000
Frequency f (MHz)
Frequency f (MHz)
NOISE FIGURE vs. OPERATING
AMBIENT TEMPERATURE
NOISE FIGURE vs. SUPPLY VOLTAGE
2.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.8
1.6
1.4
1.2
1.0
0.8
0.6
f = 470 MHz
770 MHz
f = 470 MHz
770 MHz
170 MHz
170 MHz
VCC = Vcont = 1.8 V
VCC = Vcont
–50
–25
0
25
50
75
(°C)
100
1.5
1.6
1.7
1.8
1.9
2
2.1 2.2
Operating Ambient Temperature T
A
Supply Voltage VCC (V)
POWER GAIN vs. FREQUENCY
POWER GAIN vs. FREQUENCY
20
15
10
5
20
–40°C
+25°C
V
CC = 2.0 V
1.8 V
15
10
5
TA = +85°C
1.6 V
VCC = Vcont
V
CC = Vcont = 1.8 V
0
0
0
500
1 000
1 500
2 000
0
500
1 000
1 500
2 000
Frequency f (MHz)
Frequency f (MHz)
Remark The graphs indicate nominal characteristics.
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 6 of 14
μPD5750T7D
POWER GAIN vs. OPERATING
AMBIENT TEMPERATURE
POWER GAIN vs. SUPPLY VOLTAGE
20
18
16
14
12
10
8
20
18
16
14
12
10
8
f = 170 MHz
f = 170 MHz
470 MHz
470 MHz
770 MHz
770 MHz
VCC = Vcont = 1.8 V
VCC = Vcont
6
6
1.5
1.6
1.7
1.8
1.9
2
2.1 2.2
–50
–25
0
25
50
75
100
Supply Voltage VCC (V)
Operating Ambient Temperature TA (°C)
INPUT RETURN LOSS vs. FREQUENCY
INPUT RETURN LOSS vs. FREQUENCY
0
0
TA = +85°C
VCC = 1.6 V
1.8 V
+25°C
–5
–5
2.0 V
–40°C
VCC = Vcont = 1.8 V
VCC = Vcont
–10
–10
0
500
1 000
1 500
2 000
0
500
1 000
1 500
2 000
Frequency f (MHz)
Frequency f (MHz)
OUTPUT RETURN LOSS vs. FREQUENCY
OUTPUT RETURN LOSS vs. FREQUENCY
0
0
VCC = Vcont = 1.8 V
VCC = Vcont
TA = +85°C
–5
–5
1.8 V
VCC = 1.6 V
–40°C
2.0 V
+25°C
–10
–10
0
500
1 000
1 500
2 000
0
500
1 000
1 500
2 000
Frequency f (MHz)
Frequency f (MHz)
Remark The graphs indicate nominal characteristics.
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 7 of 14
μPD5750T7D
ISOLATION vs. FREQUENCY
ISOLATION vs. FREQUENCY
0
–10
–20
–30
–40
0
–10
–20
–30
–40
–50
T = +85°C
A
V
CC = 1.6 V
+25°C
1.8 V
2.0 V
–40°C
VCC = Vcont = 1.8 V
V
CC = Vcont
–50
0
500
1 000
1 500
2 000
0
500
1 000
1 500 2 000
Frequency f (MHz)
Frequency f (MHz)
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
0
–10
–20
–30
0
–10
–20
–30
V
CC = Vcont = 1.8 V
V
CC = Vcont = 1.8 V
f = 470 MHz
f = 770 MHz
–40
–30
–20
–10
0
–40
–30
–20
–10
0
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, IM
3
vs. INPUT POWER
OUTPUT POWER, IM
3
vs. INPUT POWER
20
20
0
0
P
out
Pout
–20
–40
–20
–40
IM3
IM
3
–60
–60
V
CC = Vcont = 1.8 V
V
CC = Vcont = 1.8 V
–80
–80
f1 = 770 MHz
f2 = 771 MHz
f1 = 470 MHz
f2 = 471 MHz
–100
–100
–40
–30
–20
–10
0
10
–40
–30
–20
–10
0
10
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 8 of 14
μPD5750T7D
S-PARAMETERS 1 (LNA-mode)
(TA = +25°C, VCC = Vcont = 1.8 V, Calibration reference plane: Device edge side)
S11-FREQUENCY
1 : 170 MHz 87 Ω –264 Ω
2 : 470 MHz 25 Ω –101 Ω
3 : 770 MHz 18 Ω
–61 Ω
1
2
3
START: 50 MHz
STOP : 2 000 MHz
S22-FREQUENCY
1 : 170 MHz 94 Ω
2 : 470 MHz 54 Ω
3 : 770 MHz 36 Ω
–36 Ω
–44 Ω
–36 Ω
1
2
3
START : 50 MHz
STOP : 2 000 MHz
Remark The graphs indicate nominal characteristics.
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 9 of 14
μPD5750T7D
TYPICAL CHARACTERISTICS 3 (Bypass-mode)
(TA = +25°C, unless otherwise specified)
INSERTION LOSS vs. FREQUENCY
INSERTION LOSS vs. FREQUENCY
0
0
–1
–2
–3
–4
–5
–40°C
+25°C
V
CC = 2.0 V
–1
–2
–3
–4
–5
1.8 V
1.6 V
TA = +85°C
V
cont = 0 V
VCC = 1.8 V, Vcont = 0 V
0
500
1 000
1 500
2 000
0
500
1 000
1 500
2 000
Frequency f (MHz)
Frequency f (MHz)
INPUT RETURN LOSS vs. FREQUENCY
0
INPUT RETURN LOSS vs. FREQUENCY
0
–5
–5
–10
–15
–20
–25
–30
–10
–15
–20
–25
–30
T = +85°C
A
V
CC = 1.6 V
+25°C
1.8 V
2.0 V
–40°C
V
cont = 0 V
VCC = 1.8 V, Vcont = 0 V
0
500
1 000
1 500
2 000
0
500
1 000
1 500
2 000
Frequency f (MHz)
Frequency f (MHz)
OUTPUT RETURN LOSS vs. FREQUENCY
OUTPUT RETURN LOSS vs. FREQUENCY
0
0
–5
–5
–10
–10
V
CC = 1.6 V
T = +85°C
A
–15
–20
–25
–30
–15
–20
–25
–30
+25°C
1.8 V
2.0 V
VCC = 1.8 V, Vcont = 0 V
–40°C
V
cont = 0 V
0
500
1 000
1 500
2 000
0
500
1 000
1 500
2 000
Frequency f (MHz)
Frequency f (MHz)
Remark The graphs indicate nominal characteristics.
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 10 of 14
μPD5750T7D
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
20
20
10
10
0
0
–10
–20
–30
–10
–20
–30
V
CC = 1.8 V, Vcont = 0 V
V
CC = 1.8 V, Vcont = 0 V
f = 770 MHz
f = 470 MHz
–20
–10
0
10
20
–20
–10
0
10
20
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, IM
3
vs. INPUT POWER
OUTPUT POWER, IM
3
vs. INPUT POWER
40
40
20
20
P
out
P
out
0
–20
–40
–60
–80
0
–20
–40
–60
–80
IM
3
IM3
V
CC = 1.8 V, Vcont = 0 V
VCC = 1.8 V, Vcont = 0 V
f1 = 470 MHz, f2 = 471 MHz
10 15 20 25 30 35
Input Power Pin (dBm)
f1 = 770 MHz, f2 = 771 MHz
–5
0
5
–5
0
5
10
15 20
25
30 35
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 11 of 14
μPD5750T7D
S-PARAMETERS 2 (Bypass-mode)
(TA = +25°C, VCC = 1.8 V, Vcont = 0 V, Calibration reference plane: Device edge side)
S11-FREQUENCY
1 : 170 MHz 57 Ω
2 : 470 MHz 50 Ω
3 : 770 MHz 43 Ω
–7 Ω
–14 Ω
–16 Ω
1
2
3
START : 50 MHz
STOP : 2 000 MHz
S22-FREQUENCY
1 : 170 MHz 56 Ω
2 : 470 MHz 50 Ω
3 : 770 MHz 42 Ω
–8 Ω
–14 Ω
–17 Ω
1
2
3
START : 50 MHz
STOP : 2 000 MHz
Remark The graphs indicate nominal characteristics.
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 12 of 14
μPD5750T7D
PACKAGE DIMENSIONS
6-PIN WLBGA (T7D) (UNIT: mm)
(Top View)
(Bottom View)
B
(0.11)
0.25
0.73 0.03
A
A
B
3
2
1
φ
0.125 0.025
M
φ
0.015
S AB
(Side View)
S
0.03 S
Remark ( ): Reference value
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 13 of 14
μPD5750T7D
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground terminals must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to VCC line.
(4) Do not supply DC voltage to INPUT pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature) : 260°C or below
IR260
Time at peak temperature
: 10 seconds or less
: 60 seconds or less
: 120 30 seconds
: 3 times
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
CAUTION
Do not use different soldering methods together.
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
Page 14 of 14
Revision History
μPD5750T7D Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Feb 24, 2011
－
First edition issued
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C - 1
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
7F, No. 363 Fu Shing North Road Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2011 Renesas Electronics Corporation. All rights reserved.
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