UPD5753T7G-E1-A [RENESAS]

SiGe/CMOS Integrated Circuit; SiGe半导体/ CMOS集成电路
UPD5753T7G-E1-A
型号: UPD5753T7G-E1-A
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

SiGe/CMOS Integrated Circuit
SiGe半导体/ CMOS集成电路

半导体 消费电路 商用集成电路
文件: 总15页 (文件大小:270K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PreliminaryData Sheet  
μPD5753T7G  
R09DS0014EJ0100  
Rev.1.00  
SiGe/CMOS Integrated Circuit  
Feb 22, 2011  
4 × 2 IF Switch Matrix with Tone/Voltage Controller  
FEATURES  
4 independent IF channels, integral switching to channel input to either channel output  
4 × 2 switch matrix with integrated switch control - Tone/Voltage  
- Switch’s Enable/Disable function is linked with POLA input voltage level  
Switch’s Enable condition : VPOLA > 9.5 V  
Frequency range  
High isolation  
Insertion loss  
: f = 250 MHz to 2150 MHz  
: ISLD/U = 33 dB TYP. @Worst mode  
: LINS = 7 dB TYP. @ ZS = ZL = 50 Ω  
: ΔLINS = 1.0 dB TYP.  
Insertion loss flatness  
20-pin 4 × 4 mm square micro lead package ( 20-pin plastic QFN (0.5 mm pitch))  
APPLICATIONS  
DBS IF switching  
Multiswitch, Switch box  
4 × 2 switching application for microwave signal  
ORDERING INFORMATION  
Part Number  
Order Number  
Package  
Marking  
Supplying Form  
Embossed tape 12 mm wide  
Pin 6 to 10 face the perforation side of the tape  
Qty 5 kpcs/reel  
μPD5753T7G-E1 μPD5753T7G-E1-A 20-pin plastic QFN D5753  
(0.5 mm pitch)  
(Pb-Free)  
Dry packing specification (MSL 3 Equivalent)  
Remark To order evaluation samples, please contact your nearby sales office.  
Part number for sample order: μPD5753T7G  
CAUTION  
Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
R09DS0014EJ0100 Rev.1.00  
Feb 22, 2011  
Page 1 of 13  
μPD5753T7G  
ABSOLUTE MAXIMUM RATINGS (T = +25°C, unless otherwise specified)  
A
Parameter  
Supply Voltage  
Symbol  
VDD  
Ratings  
+4.0  
Unit  
V
Logic mode Control Voltage  
(MO and M1)  
VMO, VM1  
+4.0  
V
Power Dissipation Note  
Storage Temperature  
Operating Ambient Temperature  
Input Power  
PD  
Tstg  
TA  
325  
mW  
°C  
°C  
dBm  
V
55 to +125  
40 to +85  
+15  
Pin  
POLA Control Input Voltage  
(POLA1 and POLA2)  
VPOLA  
+25  
TONE Signal Input Voltage  
VTONE  
1
Vp-p  
Note: Mounted on double-sided copper-clad 50 × 50 × 0.51 mm laminates PWB, TA = +85°C  
RECOMMENDED OPERATING RANGE (T = +25°C, unless otherwise specified)  
A
Parameter  
Supply Voltage  
Symbol  
VDD  
MIN.  
+3.0  
40  
0
TYP.  
MAX.  
+3.6  
+85  
21  
Unit  
V
+3.3  
+25  
Operating Ambient Temperature  
POLA Control Input Voltage  
TONE Signal Frequency  
TA  
°C  
V
VPOLA  
fTONE  
VTONE  
18  
22  
26  
kHz  
Vp-p  
TONE Signal Input Voltage  
0.4  
0.6  
0.8  
ELECTRICAL CHARACTERISTICS  
(TA = +25°C, VDD = +3.3 V, ZS = ZL = 50 Ω for each port, Worst mode, unless otherwise  
specified)  
Parameter  
Supply Current  
Symbol  
Test Conditions  
MIN.  
TYP.  
MAX.  
Unit  
IDD  
Non–RF,  
1.9  
3.0  
mA  
Non control Signal/Voltage  
Pin = 0 dBm, f = 0.95 GHz  
Pin = 0 dBm, f = 2.15 GHz  
Pin = 0 dBm, f = 2.15 GHz  
Pin = 0 dBm, f = 0.95 GHz  
Pin = 0 dBm, f = 2.15 GHz  
Insertion Loss 1  
LINS  
LINS  
1
2
28  
15  
10  
14  
6.5  
7.5  
8.5  
9.5  
dB  
dB  
dB  
dB  
dB  
V
Insertion Loss 2  
Isolation D/U Ratio 2 Note  
Output Return Loss 1  
Output Return Loss 2  
ISLD/U  
2
33  
RLout  
RLout  
1
25  
2
13  
POLA Control Threshold Voltage,  
Channel Selection  
Vth_POLA OFF to ON  
14.75  
15.5  
TONE Signal Threshold  
Voltage, Channel Selection  
Vth_TONE fTONE = 22 kHz, Duty Cycle = 50%,  
pulse wave, OFF to ON  
0.1  
0.15  
0.35  
Vp-p  
Note: Isolation D/U (Desire/Un-desire) ratio = (Signal Leakage (off-state)) (Insertion loss (on-state))at Worst mode  
R09DS0014EJ0100 Rev.1.00  
Feb 22, 2011  
Page 2 of 13  
μPD5753T7G  
STANDARD CHARACTERISTICS FOR REFERENCE  
(TA = +25°C, VDD = +3.3 V, ZS = ZL = 50 Ω for each port, Worst mode, unless otherwise  
specified)  
Parameter  
Insertion Loss Flatness  
Isolation D/U Ratio 1 Note  
Input Return Loss 1  
Symbol  
Test Conditions  
|LINS1-LINS2|  
Reference Value  
Unit  
dB  
dB  
dB  
dB  
μA  
μs  
ΔLINS  
1.0  
40  
ISLD/U  
1
Pin = 0 dBm, f = 0.95 GHz  
Pin = 0 dBm, f = 0.95 GHz  
Pin = 0 dBm, f = 2.15 GHz  
VPOLA = 21 V  
RLin1  
RLin2  
IPOLA  
20  
Input Return Loss 2  
14  
POLA Control Current  
POLA Switching Time  
TONE Switching Time  
230  
0.75  
220  
TPOLA  
TTONE  
VPOLA = 18 V, OFF to ON  
fTONE = 22 kHz, Duty Cycle = 50%,  
μs  
pulse wave, VTONE = 600 mVp-p  
OFF to ON  
,
Note: Isolation D/U (Desire/Un-desire) ratio = (Signal Leakage (off-state)) (Insertion loss (on-state))at Worst mode  
R09DS0014EJ0100 Rev.1.00  
Feb 22, 2011  
Page 3 of 13  
μPD5753T7G  
PIN CONNECTIONS  
(Top View)  
(Bottom View)  
Pin 1 Identifier  
5
4 3 2 1  
1
2
3
4 5  
6
7
20  
19  
20  
6
7
19  
18  
17  
16  
D 5 7 5 3  
8
18  
8
GND  
9
17  
16  
9
10  
10  
11 12 13 14 15  
15 14 13 12 11  
Pin No.  
Pin Name  
TONE1  
POLA1  
GND  
Pin No.  
Pin Name  
IN-B  
Pin No.  
11  
Pin Name  
GND  
Pin No.  
16  
Pin Name  
OUT2  
M1  
1
2
3
4
5
6
7
GND  
12  
IN-C  
17  
8
GND  
13  
GND  
18  
VDD  
IN-A  
9
GND  
14  
POLA2  
TONE2  
19  
M0  
GND  
10  
IN-D  
15  
20  
OUT1  
Remark Heat Sink (Bottom side) : GND  
R09DS0014EJ0100 Rev.1.00  
Feb 22, 2011  
Page 4 of 13  
μPD5753T7G  
TRUTH TABLE  
SWITCHING CONTROL OF OUT1 SIGNAL PATH  
SWITCHING CONTROL OF OUT2 SIGNAL PATH  
Logic Pattern  
Select  
CONTROL PINS  
for OUT1  
OUT1  
Logic Pattern  
Select  
CONTROL PINS  
for OUT2  
OUT2  
M0  
M1  
POLA1  
No Voltage  
No Voltage  
Low  
TONE1  
Output Signal  
None  
None  
IN-C  
M0  
M1  
POLA2  
No Voltage  
No Voltage  
Low  
TONE2  
Output Signal  
None  
None  
IN-C  
22 kHz  
22 kHz  
0
0
22 kHz  
22 kHz  
0
0
0
0
Low  
0
IN-D  
Low  
0
IN-D  
High  
0
IN-B  
High  
0
IN-B  
High  
22 kHz  
IN-A  
High  
22 kHz  
IN-A  
No Voltage  
No Voltage  
Low  
22 kHz  
None  
None  
IN-A  
No Voltage  
No Voltage  
Low  
22 kHz  
None  
None  
IN-A  
0
0
22 kHz  
22 kHz  
1
0
1
1
1
0
1
0
1
1
1
0
Low  
0
IN-B  
Low  
0
IN-B  
High  
0
22 kHz  
22 kHz  
0
IN-D  
High  
0
22 kHz  
22 kHz  
0
IN-D  
High  
IN-C  
High  
IN-C  
No Voltage  
No Voltage  
Low  
None  
None  
IN-D  
No Voltage  
No Voltage  
Low  
None  
None  
IN-D  
22 kHz  
0
22 kHz  
0
Low  
IN-C  
Low  
IN-C  
High  
0
IN-B  
High  
0
IN-B  
High  
22 kHz  
22 kHz  
0
IN-A  
High  
22 kHz  
22 kHz  
0
IN-A  
No Voltage  
No Voltage  
Low  
None  
None  
IN-B  
No Voltage  
No Voltage  
Low  
None  
None  
IN-B  
22 kHz  
0
22 kHz  
0
Low  
IN-A  
Low  
IN-A  
High  
0
IN-D  
High  
0
IN-D  
High  
22 kHz  
IN-C  
High  
22 kHz  
IN-C  
Remarks M0, M1 : “0“ : 0 V dc (Connected to GND line)  
“1“ : VDD dc (Connected to VDD line)  
VDD = + 3.3 V dc  
POLA1, 2 : “Low”  
“High”  
: 9.5 V to 14 V dc  
: 15.5 V to 19 V dc  
“No Voltage” : 0 V dc (< 5 V dc) or Open  
Switch’s Enable/Disable function is linked with POLA input voltage level  
Switch’s Enable condition : VPOLA > 9.5 V  
R09DS0014EJ0100 Rev.1.00  
Feb 22, 2011  
Page 5 of 13  
μPD5753T7G  
FUNCTIONAL DIAGRAM  
(Top View)  
5
1
20  
6
IN-B  
OUT1  
M0  
Enable1  
GND  
GND  
GND  
IN-D  
Switch  
Controller  
VDD  
M1  
Enable2  
OUT2  
16  
10  
11  
15  
R09DS0014EJ0100 Rev.1.00  
Feb 22, 2011  
Page 6 of 13  
μPD5753T7G  
EVALUATION CIRCUIT  
330 pF  
R = 0 kΩNote  
POLA1  
POLA control = 13 V/18 V  
TONE1  
TONE control = 0/22 kHz,  
0.6 Vp-p, pluse  
10 000 pF (10 nF)  
100 pF  
RF input A  
IN-A  
100 pF  
OUT1  
Output 1  
5
1
20  
6
100 pF  
RF input B  
IN-B  
Logic mode control  
= 0/1 (0 V dc / VDD dc)  
Enable1  
= Connected to GND line/VDD Line  
M0  
GND  
V
DD  
Switch  
Controller  
GND  
GND  
VDD = +3.3 V  
1 000 pF  
M1  
100 pF  
RF input D  
IN-D  
Logic mode control  
= 0/1 (0 V dc/VDD dc)  
= Connected to GND line/VDD Line  
Enable2  
16  
10  
11  
15  
RF input C  
IN-C  
OUT2  
Output 2  
100 pF  
100 pF  
10 000 pF (10 nF)  
TONE2  
TONE control = 0/22 kHz,  
0.6 Vp-p, pluse  
POLA2  
POLA control = 13 V/18 V  
R = 0 kΩNote  
330 pF  
Note: R = 0 kΩ (at POLA control = 13 V/18 V)  
= 5.6 kΩ (at POLA control = 14 V/18 V)  
Remarks Heat Sink (Bottom Side): GND  
ZS = ZL = 50 Ω  
Switch’s Enable/Disable function is linked with POLA input voltage level  
Switch’s Enable condition : VPOLA > 9.5 V  
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.  
R09DS0014EJ0100 Rev.1.00  
Feb 22, 2011  
Page 7 of 13  
μPD5753T7G  
TYPICAL CHARACTERISTICS  
(TA = +25°C, VDD = +3.3 V, Pin = 0 dBm, ZS = ZL = 50 Ω for each port, unless otherwise  
specified)  
INSERTION LOSS vs. FREQUENCY  
(IN x - OUT1)  
INSERTION LOSS vs. FREQUENCY  
(IN x - OUT2)  
-
-
–5.0  
–5.5  
–6.0  
–6.5  
–7.0  
–7.5  
–8.0  
–8.5  
–9.0  
–9.5  
–10.0  
–5.0  
–5.5  
–6.0  
–6.5  
–7.0  
–7.5  
–8.0  
–8.5  
–9.0  
–9.5  
–10.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Frequency f (GHz)  
Frequency f (GHz)  
ISOLATION D/U RATIO vs. FREQUENCY  
(IN A - OUT1)  
ISOLATION D/U RATIO vs. FREQUENCY  
(IN B - OUT1)  
-
-
0.0  
–10.0  
–20.0  
–30.0  
–40.0  
–50.0  
–60.0  
–70.0  
–80.0  
–90.0  
0.0  
–10.0  
–20.0  
–30.0  
–40.0  
–50.0  
–60.0  
–70.0  
–80.0  
–90.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Frequency f (GHz)  
Frequency f (GHz)  
ISOLATION D/U RATIO vs. FREQUENCY  
(IN C - OUT1)  
ISOLATION D/U RATIO vs. FREQUENCY  
(IN D - OUT1)  
-
-
0.0  
–10.0  
–20.0  
–30.0  
–40.0  
–50.0  
–60.0  
–70.0  
–80.0  
–90.0  
0.0  
–10.0  
–20.0  
–30.0  
–40.0  
–50.0  
–60.0  
–70.0  
–80.0  
–90.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Frequency f (GHz)  
Frequency f (GHz)  
Remark The graphs indicate nominal characteristics.  
R09DS0014EJ0100 Rev.1.00  
Feb 22, 2011  
Page 8 of 13  
μPD5753T7G  
ISOLATION D/U RATIO vs. FREQUENCY  
(IN A - OUT2)  
ISOLATION D/U RATIO vs. FREQUENCY  
(IN B - OUT2)  
-
-
0.0  
–10.0  
–20.0  
–30.0  
–40.0  
–50.0  
–60.0  
–70.0  
–80.0  
0.0  
–10.0  
–20.0  
–30.0  
–40.0  
–50.0  
–60.0  
–70.0  
–80.0  
–90.00.0  
0.5  
1.0  
1.5  
2.0  
2.5  
–90.00.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Frequency f (GHz)  
Frequency f (GHz)  
ISOLATION D/U RATIO vs. FREQUENCY  
(IN C - OUT2)  
ISOLATION D/U RATIO vs. FREQUENCY  
(IN D - OUT2)  
-
-
0.0  
–10.0  
–20.0  
–30.0  
–40.0  
–50.0  
–60.0  
–70.0  
–80.0  
0.0  
–10.0  
–20.0  
–30.0  
–40.0  
–50.0  
–60.0  
–70.0  
–80.0  
–90.00.0  
0.5  
1.0  
1.5  
2.0  
2.5  
–90.00.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Frequency f (GHz)  
Frequency f (GHz)  
OUTPUT RETURN LOSS vs. FREQUENCY  
(IN x - OUT1)  
OUTPUT RETURN LOSS vs. FREQUENCY  
(IN x - OUT2)  
-
-
0.0  
–10.0  
–20.0  
–30.0  
–40.0  
–50.0  
0.0  
–10.0  
–20.0  
–30.0  
–40.0  
–50.0  
–60.00.0  
0.5  
1.0  
1.5  
2.0  
2.5  
–60.00.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Frequency f (GHz)  
Frequency f (GHz)  
Remark The graphs indicate nominal characteristics.  
R09DS0014EJ0100 Rev.1.00  
Feb 22, 2011  
Page 9 of 13  
μPD5753T7G  
INPUT RETURN LOSS vs. FREQUENCY  
(IN A - OUTx)  
INPUT RETURN LOSS vs. FREQUENCY  
(IN B - OUTx)  
-
-
0.0  
0.0  
–5.0  
–5.0  
–10.0  
–15.0  
–20.0  
–25.0  
–30.0  
–35.0  
–40.0  
–45.0  
–10.0  
–15.0  
–20.0  
–25.0  
–30.0  
–35.0  
–40.0  
–45.0  
–50.0  
–50.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Frequency f (GHz)  
Frequency f (GHz)  
INPUT RETURN LOSS vs. FREQUENCY  
(IN C - OUTx)  
INPUT RETURN LOSS vs. FREQUENCY  
(IN D - OUTx)  
-
-
0.0  
0.0  
–5.0  
–5.0  
–10.0  
–15.0  
–20.0  
–25.0  
–30.0  
–35.0  
–40.0  
–45.0  
–50.0  
–10.0  
–15.0  
–20.0  
–25.0  
–30.0  
–35.0  
–40.0  
–45.0  
–50.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Frequency f (GHz)  
Frequency f (GHz)  
Remark The graphs indicate nominal characteristics.  
R09DS0014EJ0100 Rev.1.00  
Feb 22, 2011  
Page 10 of 13  
μPD5753T7G  
MOUNTING PAD LAYOUT DIMENSIONS  
20-PIN 4 × 4 mm SQUARE MICRO LEAD PACKAGE (20-PIN PLASTIC QFN (0.5 mm pitch)) (UNIT:  
mm)  
2.15  
1.65  
1.35  
2.15  
1.65  
1.35  
20-0.2  
Remark The mounting pad layout in this document is for reference only.  
R09DS0014EJ0100 Rev.1.00  
Feb 22, 2011  
Page 11 of 13  
μPD5753T7G  
PACKAGE DIMENSIONS  
20-PIN 4 × 4 mm SQUARE MICRO LEAD PACKAGE (20-PIN PLASTIC QFN (0.5 mm pitch)) (UNIT:  
mm)  
(Top View)  
(Side View)  
0.57  
+0.03  
–0.05  
4 0.1  
(Bottom View)  
0.15  
1.72  
Pin 1  
0.35 0.075  
0.5 0.1  
2.7 0.1  
Remark A>0  
R09DS0014EJ0100 Rev.1.00  
Feb 22, 2011  
Page 12 of 13  
μPD5753T7G  
RECOMMENDED SOLDERING CONDITIONS  
This product should be soldered and mounted under the following recommended conditions. For soldering methods and  
conditions other than those recommended below, contact your nearby sales office.  
Soldering Method  
Soldering Conditions  
Condition Symbol  
Infrared Reflow  
Peak temperature (package surface temperature) : 260°C or below  
IR260  
Time at peak temperature  
: 10 seconds or less  
: 60 seconds or less  
: 120 30 seconds  
: 3 times  
Time at temperature of 220°C or higher  
Preheating time at 120 to 180°C  
Maximum number of reflow processes  
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below  
Partial Heating  
Peak temperature (package surface temperature) : 350°C or below  
HS350  
Soldering time (per side of device)  
: 3 seconds or less  
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below  
CAUTION  
Do not use different soldering methods together (except for partial heating).  
R09DS0014EJ0100 Rev.1.00  
Feb 22, 2011  
Page 13 of 13  
Revision History  
μPD5753T7G Data Sheet  
Description  
Summary  
Rev.  
1.00  
Date  
Page  
Feb 22, 2011  
First edition issued  
All trademarks and registered trademarks are the property of their respective owners.  
C - 1  
Notice  
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas  
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to  
be disclosed by Renesas Electronics such as that disclosed through our website.  
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or  
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or  
others.  
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.  
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for  
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the  
use of these circuits, software, or information.  
5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and  
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to  
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is  
prohibited under any applicable domestic or foreign laws or regulations.  
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics  
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.  
7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product  
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas  
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for  
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the  
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.  
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.  
"Standard":  
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;  
personal electronic equipment; and industrial robots.  
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically  
designed for life support.  
"Specific":  
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical  
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.  
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage  
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the  
use of Renesas Electronics products beyond such specified ranges.  
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and  
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the  
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to  
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,  
please evaluate the safety of the final products or system manufactured by you.  
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics  
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes  
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.  
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.  
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.  
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.  
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.  
SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/" for the latest and detailed information.  
Renesas Electronics America Inc.  
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.  
Tel: +1-408-588-6000, Fax: +1-408-588-6130  
Renesas Electronics Canada Limited  
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada  
Tel: +1-905-898-5441, Fax: +1-905-898-3220  
Renesas Electronics Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K  
Tel: +44-1628-585-100, Fax: +44-1628-585-900  
Renesas Electronics Europe GmbH  
Arcadiastrasse 10, 40472 Düsseldorf, Germany  
Tel: +49-211-65030, Fax: +49-211-6503-1327  
Renesas Electronics (China) Co., Ltd.  
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China  
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679  
Renesas Electronics (Shanghai) Co., Ltd.  
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China  
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898  
Renesas Electronics Hong Kong Limited  
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong  
Tel: +852-2886-9318, Fax: +852 2886-9022/9044  
Renesas Electronics Taiwan Co., Ltd.  
7F, No. 363 Fu Shing North Road Taipei, Taiwan  
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670  
Renesas Electronics Singapore Pte. Ltd.  
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632  
Tel: +65-6213-0200, Fax: +65-6278-8001  
Renesas Electronics Malaysia Sdn.Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510  
Renesas Electronics Korea Co., Ltd.  
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea  
Tel: +82-2-558-3737, Fax: +82-2-558-5141  
© 2011 Renesas Electronics Corporation. All rights reserved.  
Colophon 1.0  

相关型号:

UPD5754T7A

SiGe/CMOS Integrated Circuit 4 * 2 IF Switch Matrix with Gain and Tone
RENESAS

UPD5754T7A-E1

SiGe/CMOS Integrated Circuit 4 * 2 IF Switch Matrix with Gain and Tone
RENESAS

UPD5754T7A-E1-A

SiGe/CMOS Integrated Circuit 4 * 2 IF Switch Matrix with Gain and Tone
RENESAS

UPD5756T6N

SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function
RENESAS

UPD5756T6N-E2

SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function
RENESAS

UPD5756T6N-E2-A

SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function
RENESAS

UPD5758T6J

Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone
RENESAS

UPD5758T6J-E4

Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone
RENESAS

UPD5758T6J-E4-A

Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone
RENESAS

UPD5759T6J

Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone
RENESAS

UPD5759T6J-E4

Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone
RENESAS

UPD5759T6J-E4-A

Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone
RENESAS