UPD5754T7A [RENESAS]
SiGe/CMOS Integrated Circuit 4 * 2 IF Switch Matrix with Gain and Tone; SiGe半导体/ CMOS集成电路4 * 2如果开关矩阵与增益和音
| 型号： | UPD5754T7A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | SiGe/CMOS Integrated Circuit 4 * 2 IF Switch Matrix with Gain and Tone |
| 文件： | 总14页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PreliminaryData Sheet
μPD5754T7A
R09DS0012EJ0100
Rev.1.00
SiGe/CMOS Integrated Circuit
Dec 22, 2010
4 × 2 IF Switch Matrix with Gain and Tone/Voltage Controller
FEATURES
•
•
4 independent IF channels, integral switching to channel input to either channel output
4 × 2 switch matrix with integrated IF amplifier and switch control - Tone/Voltage
- Switch’s Enable mode is linked VCC external pins
•
•
•
•
•
•
Mirror reversal logic pattern of μPD5739T7A
Frequency range
: f = 950 MHz to 2 150 MHz
High isolation
: ISLD/U = 30 dB TYP. @Worst mode
Power gain
: GP = 18 dB TYP. @ ZS = ZL = 50 Ω
Power gain flatness
Surface mounting
: ΔGP = 1.0 dB TYP.
: 28-pin 5 × 5 mm square micro lead package (28-pin plastic QFN (0.5 mm pitch))
APPLICATIONS
•
•
•
DBS IF switching
Multiswitch, Switch box
4 × 2 switching application for microwave signal
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
μPD5754T7A-E1 μPD5754T7A-E1-A 28-pin plastic QFN D5754
•
•
Embossed tape 12 mm wide
Pin 8 to 14 face the perforation side of the
tape
(0.5 mm pitch)
(Pb-Free)
•
•
Qty 2.5 kpcs/reel
Dry packing specification (MSL 3 Equivalent)
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5754T7A
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0012EJ0100 Rev.1.00
Dec 22, 2010
Page 1 of 12
μPD5754T7A
ABSOLUTE MAXIMUM RATINGS (T = +25°C, unless otherwise specified)
A
Parameter
Supply Voltage
Symbol
VDD
Ratings
Unit
,
+4.0
V
VCC1, VCC
2
Power Dissipation Note
Storage Temperature
Operating Ambient Temperature
Input Power
PD
1.465
W
°C
°C
dBm
V
Tstg
−55 to +125
−40 to +85
+5
TA
Pin
POLA Control Input Voltage
(POLA1 and POLA2)
VPOLA
+25
TONE Signal Input Voltage
VTONE
1
Vp-p
Note: Mounted on double-sided copper-clad 50 × 50 × 0.51 mm laminates PWB, TA = +85°C
RECOMMENDED OPERATING RANGE (T = +25°C, unless otherwise specified)
A
Parameter
Supply Voltage Note
Symbol
VDD
MIN.
TYP.
MAX.
Unit
,
+3.0
+3.3
+3.6
V
VCC1, VCC
2
Operating Ambient Temperature
POLA Control Input Voltage
TONE Signal Frequency
TA
−40
0
+25
−
22
0.6
+85
21
°C
V
VPOLA
fTONE
18
0.4
26
kHz
Vp-p
TONE Signal Input Voltage
Note: VCC1 = VCC2 = VDD
VTONE
0.8
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VDD = VCC1 = VCC2 = +3.3 V, ZS = ZL = 50 Ω for each port, worst mode,
unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Total Supply Current
ICC
non–RF, 2 channels active
33
40
50
mA
total current of ICC1, ICC2, and IDD
Power Gain 1
GP1
GP2
Pin = −30 dBm, f = 0.95 GHz
Pin = −30 dBm, f = 2.15 GHz
Pin = −30 dBm, f = 2.15 GHz
f = 0.95 GHz
15
14.5
25
18
17.5
30
21
20.5
−
dB
dB
Power Gain 2
Isolation D/U-ratio 2 Note
Gain 1 dB Compression
Output Power 1
ISLD/U
2
dB
PO (1 dB)
1
5
8
−
dBm
Gain 1 dB Compression
Output Power 2
PO (1 dB)
2
f = 2.15 GHz
3
6
−
dBm
Output Return Loss 1
Output Return Loss 2
Noise Figure 1
RLout
RLout
1
Pin = −30 dBm, f = 0.95 GHz
Pin = −30 dBm, f = 2.15 GHz
f = 0.95 GHz
10
10
−
−
14
14
−
−
12.5
13.5
15.5
dB
dB
dB
dB
V
2
12.5
10.5
11.5
14.5
NF1
NF2
Noise Figure 2
f = 2.15 GHz
POLA Control Threshold Voltage,
Channel Selection
Vth_POLA OFF to ON
TONE Signal Threshold
Voltage, Channel Selection
Vth_TONE fTONE = 22 kHz, Duty Cycle = 50%,
pulse wave, OFF to ON
0.1
0.15
0.35
Vp-p
Note: Isolation D/U (Desire/Un-desire) ratio = ⎪(Signal Leakage (off-state)) − (Power Gain (on-state))⎪ at worst mode
R09DS0012EJ0100 Rev.1.00
Dec 22, 2010
Page 2 of 12
μPD5754T7A
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°C, VDD = VCC1 = VCC2 = +3.3 V, ZS = ZL = 50 Ω for each port, worst mode,
unless otherwise specified)
Parameter
Supply Current of VCC1, VCC
Supply Current of VDD
Gain Flatness
Symbol
ICC1, ICC
IDD
Test Conditions
Reference Value
Unit
mA
mA
dB
2
2
19
2.0
1.0
1.0
ΔGP1
ΔGP2
Pin = −30 dBm,
f = 0.95 GHz to 2.15 GHz
Differential Gain Between Active
Channels
dB
Gain Change, selected channel
Isolation D/U Ratio 1 Note
Input Return Loss 1
ΔGP3
1.0
30
13
10
19
dB
dB
ISLD/U
RLin1
RLin2
OIP31
1
Pin = −30 dBm, f = 0.95 GHz
Pin = −30 dBm, f = 0.95 GHz
Pin = −30 dBm, f = 2.15 GHz
f1 = 950 MHz,
f2 = 951 MHz
dB
Input Return Loss 2
dB
Output 3rd Order Intercept Point
1
dBm
Output 3rd Order Intercept Point
2
OIP32
IM2
f1 = 2 150 MHz,
15
44
dBm
dBc
f2 = 2 151 MHz
2nd Order Intermodulation
Distortion
f1 = 950 MHz,
f2 = 951 MHz,
Pout = −5 dBm/tone
2nd Harmonics
2f0
K1
f0 = 1.0 GHz, Pout = −15 dBm
Pin = −30 dBm, f = 0.95 GHz
Pin = −30 dBm, f = 2.15 GHz
VPOLA = 21 V
60
2.5
2.5
50
dBc
−
−
μA
μs
μs
K factor 1
K factor 2
K2
POLA Control Current
POLA Switching Time
TONE Switching Time
IPOLA
TPOLA
TTONE
VPOLA = 18 V, OFF to ON
fTONE = 22 kHz, Duty Cycle = 50%,
1.0
250
pulse wave, VTONE = 600 mVp-p
OFF to ON
,
Note: Isolation D/U (Desire/Un-desire) ratio = ⎪(Signal Leakage (off-state)) − (Power Gain (on-state))⎪ at worst mode
R09DS0012EJ0100 Rev.1.00
Dec 22, 2010
Page 3 of 12
μPD5754T7A
PIN CONNECTIONS
(Top View)
(Bottom View)
Pin 1 Identifier
7 6 5 4 3 2 1
1 2 3 4 5 6 7
8
9
8
9
28
27
26
28
27
26
25
24
23
22
10
11
12
13
14
10
11
12
13
14
D 5 7 5 4
25
GND
24
23
22
15 16 17 18 19 20 21
21 20 19 18 17 16 15
Pin No.
Pin Name
VCC
Pin No.
Pin Name
GND
Pin No.
15
Pin Name
IN-D
Pin No.
22
Pin Name
GND
1
2
3
4
5
6
7
1
8
OUT1
GND
GND
GND
GND
IN-A
9
IN-B
16
GND
23
POLA2
TONE2
VDD
10
11
12
13
14
GND
17
GND
24
GND
18
GND
25
GND
19
GND
26
TONE1
POLA1
GND
IN-C
20
OUT2
27
GND
21
VCC2
28
Remark Heat Sink (Bottom side) : GND
R09DS0012EJ0100 Rev.1.00
Dec 22, 2010
Page 4 of 12
μPD5754T7A
TRUTH TABLE OF SWITCHING BY CONDITION OF CONTROL VOLTAGE
State
Output to
Control Pins
Input State
No.
Mode
OUT1 OUT2
TONE1
POLA1
TONE2
POLA2
VCC1
VCC2
(Enable1) (Enable2)
1
2
DD
DC
DB
DA
CD
CC
CB
CA
BD
BC
BB
BA
AD
AC
AB
AA
ND
NC
NB
NA
DN
CN
BN
AN
IN-D
22 kHz
22 kHz
22 kHz
22 kHz
0
Low
Low
22 kHz
0
Low
Low
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
0
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
0
IN-C
IN-D
3
IN-B
Low
0
High
4
IN-A
IN-D
Low
22 kHz
22 kHz
0
High
5
Low
Low
6
IN-C
IN-C
0
Low
Low
7
IN-B
0
Low
0
High
Both
OUTs
Enabled
8
IN-A
IN-D
0
Low
22 kHz
22 kHz
0
High
9
0
High
Low
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
IN-C
IN-B
0
High
Low
IN-B
0
High
0
High
IN-A
IN-D
0
High
22 kHz
22 kHz
0
High
22 kHz
22 kHz
22 kHz
22 kHz
Any Note
Any Note
Any Note
Any Note
22 kHz
0
High
Low
IN-C
IN-A
High
Low
IN-B
High
0
High
IN-A
IN-D
High
22 kHz
22 kHz
0
High
Any Note
Any Note
Any Note
Any Note
Low
Low
IN-C
None
Low
0
OUT1
Disabled
IN-B
0
High
0
IN-A
IN-D
22 kHz
Any Note
Any Note
Any Note
Any Note
Any Note
High
0
Any Note
Any Note
Any Note
Any Note
Any Note
3.3 V
3.3 V
3.3 V
3.3 V
0
IN-C
None
IN-B
Low
0
OUT2
Disabled
0
High
0
IN-A
22 kHz
Any Note
High
Any Note
0
25 Both OUTs Disabled None
None
0
Note: Any means High or Low, 22 kHz or 0.
Remark Low : under +14 Vdc, High : +15.5 to +19.0 Vdc, VDD = +3.3 Vdc
FUNCTIONAL DIAGRAM
(Top View)
7
1
28
8
IF Amp1
Enable1
GND
GND
POLA1
TONE1
IN-B
GND
GND
GND
IN-C
GND
Switch
Controller
VDD
TONE2
POLA2
Enable2
IF Amp2
GND
22
14
15
21
R09DS0012EJ0100 Rev.1.00
Dec 22, 2010
Page 5 of 12
μPD5754T7A
EVALUATION CIRCUIT
OUT1
1 000 pF
100 pF
V
CC1 = +3.3 V
330 pF
100 pF
RF input
IN-A
POLA1
POLA control = 13 V/18 V
R = 0 kΩNote
1 000 pF
47 nH
10 nF
7
1
TONE1
TONE control = 0/22 kHz,
0.6 Vp-p, pluse
28
8
IF Amp1
GND
GND
100 pF
100 pF
RF input
IN-B
Enable1
GND
GND
GND
Switch
Controller
V
DD = +3.3 V
RF input
IN-C
1 000 pF
Enable2
IF Amp2
GND
22
GND
14
TONE2
TONE control = 0/22 kHz,
0.6 Vp-p, pluse
15
21
10 nF
RF input
IN-D
47 nH
R = 0 kΩNote
1 000 pF
POLA2
POLA control = 13 V/18 V
100 pF
330 pF
V
CC2 = +3.3 V
100 pF
1 000 pF
OUT2
Note: R = 0 kΩ (at POLA control = 13 V/18 V)
= 5.6 kΩ (at POLA control = 14 V/18 V)
Remark Low : under +14 Vdc, High : +15.5 to +19.0 Vdc, VDD = +3.3 Vdc
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
R09DS0012EJ0100 Rev.1.00
Dec 22, 2010
Page 6 of 12
μPD5754T7A
TYPICAL CHARACTERISTICS
(TA = +25°C, VDD = VCC1 = VCC2 = +3.3 V, ZS = ZL = 50 Ω for each port, worst mode,
unless otherwise specified)
TOTAL SUPPLY CURRENT
SUPPLY CURRENT OF VDD
vs. SUPPLY VOLTAGE (IF-Amplifier part)
vs. SUPPLY VOLTAGE (Control part)
25
2.5
2.0
1.5
1.0
0.5
0
No Input Signal
No Input Signal
VPOLA = VTONE = 0 V
V
CC = VPOLA = VTONE = 0 V
20
15
10
5
0
1
1
3
4
0
2
3
4
5
0
2
5
Supply Voltage VCC (V)
Supply Voltage VDD (V)
POLA CONTROL CURRENT vs.
POLA CONTROL INPUT VOLTAGE (Control part)
50
No input signal
45
VDD = 3.3 V, VCC = VTONE = 0 V
μ
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
POLA Control Input Voltage VPOLA (V)
POWER GAIN vs. FREQUENCY
ISOLATION D/U RATIO vs. FREQUENCY
22
21
20
19
18
17
16
15
14
13
12
11
10
0
–10
–20
–30
–40
–50
–60
–70
–80
4.0
0
0.5 1.0 1.5 2.0 2.5
3.0
3.5 4.0
4.5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency f (GHz)
4.5
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0012EJ0100 Rev.1.00
Dec 22, 2010
Page 7 of 12
μPD5754T7A
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
20
20
15
PO (1 dB) = +8.3 dBm
PO (1 dB) = +5.9 dBm
f = 2.15 GHz
f = 0.95 GHz
15
10
10
5
5
0
0
–5
–5
–10
–15
–20
–25
–10
–15
–20
–25
–30
Input Power Pin (dBm)
10
–30
Input Power Pin (dBm)
10
–50
–40
–20
–10
0
20
–50
–40
–20 –10
0
20
OUTPUT POWER, IM
3
vs. INPUT POWER
OUTPUT POWER, IM
3
vs. INPUT POWER
30
30
OIP3 = +18.8 dBm
20
OIP3 = +14.7 dBm
20
10
10
Pout
Pout
0
–10
–20
–30
–40
–50
–60
–70
0
–10
–20
–30
–40
–50
–60
–70
IM3
IM3
f1 = 950 MHz
f2 = 951 MHz
f1 = 2 150 MHz
f2 = 2 151 MHz
–35
–30 –25 –20 –15
–10
–5
0
–35
–30
–20 –15
–25
–10
–5
0
Input Power Pin (1 tone) (dBm)
Input Power Pin (1 tone) (dBm)
OUTPUT POWER, 2f0 vs. INPUT POWER
OUTPUT POWER, IM
2
vs. INPUT POWER
10
20
0
10
Pout
0
–10
Pout
–20
–30
–40
–50
–60
–70
–80
–10
–20
–30
–40
–50
–60
IM2
2f0
f1 = 950 MHz
f2 = 951 MHz
f = 1 000 MHz
–10
–15
–40
–30
–20
0
–30
–25
–20
–10
–5
Input Power Pin (dBm)
Input Power Pin (1 tone) (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0012EJ0100 Rev.1.00
Dec 22, 2010
Page 8 of 12
μPD5754T7A
NOISE FIGURE vs. FREQUENCY
ON AREA OF TONE
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
450
400
350
300
250
200
150
100
50
ON area of
TONE
Pulse Signal
(Duty 50%)
9.0
OFF→ON
ON→OFF
8.5
8.0
0
500
1
10
18
26
100
1 000
0
1 000 1 500 2 000 2 500
Frequency f (MHz)
3 000
TONE Signal Frequency fTONE (kHz)
POLA Thereshold Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
OFF→ON
ON→OFF
15.5
17
12
13
14
15
16
18
POLA Circuit Input Voltage POLA_IN (V)
Remark The graphs indicate nominal characteristics.
R09DS0012EJ0100 Rev.1.00
Dec 22, 2010
Page 9 of 12
μPD5754T7A
MOUNTING PAD LAYOUT DIMENSIONS
28-PIN 5 × 5 mm SQUARE MICRO LEAD PACKAGE (28-PIN PLASTIC QFN (0.5 mm pitch))
(UNIT: mm)
2.65
2.1
2.65
2.1
0.5
28–0.2
3.02
Remark The mounting pad layout in this document is for reference only.
R09DS0012EJ0100 Rev.1.00
Dec 22, 2010
Page 10 of 12
μPD5754T7A
PACKAGE DIMENSIONS
28-PIN 5 × 5 mm SQUARE MICRO LEAD PACKAGE (28-PIN PLASTIC QFN (0.5 mm pitch))
(UNIT: mm)
(Top View)
(Side View)
5.0 0.1
0.72 0.05
(Bottom View)
0.5
Pin1
(Dimensions of Each Pin Part)
(C0.2)
(0.325)
0.4 0.05
0.08 MIN.
0.2 0.05
3.02 0.1
Remark A>0
( ) : Reference value
R09DS0012EJ0100 Rev.1.00
Dec 22, 2010
Page 11 of 12
μPD5754T7A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature) : 260°C or below
IR260
Time at peak temperature
: 10 seconds or less
: 60 seconds or less
: 120 30 seconds
: 3 times
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
Partial Heating
Peak temperature (terminal temperature)
Soldering time (per side of device)
: 350°C or below
: 3 seconds or less
HS350
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0012EJ0100 Rev.1.00
Dec 22, 2010
Page 12 of 12
Revision History
μPD5754T7A Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Dec 22, 2010
−
First edition issued
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range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
7F, No. 363 Fu Shing North Road Taipei, Taiwan, R.O.C.
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2010 Renesas Electronics Corporation. All rights reserved.
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