UPD5756T6N [RENESAS]
SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function; 的SiGe BiCMOS集成电路宽带LNA IC通过功能
| 型号： | UPD5756T6N |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function |
| 文件： | 总17页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
μPD5756T6N
R09DS0026EJ0100
Rev.1.00
SiGe BiCMOS Integrated Circuit
Oct 04, 2011
Wide Band LNA IC with Through Function
DESCRIPTION
The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV
application. This IC exhibits low noise figure and low distortion characteristics.
This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics.
FEATURES
•
•
Low voltage operation
Low current consumption
: VCC = 3.1 to 3.5 V (3.3 V TYP.)
: ICC1 = 25 mA TYP. @VCC = 3.3 V (LNA-mode)
: ICC2 = 1 μA MAX. @VCC = 3.3 V (Bypass-mode)
: f = 40 to 1 000 MHz
: NF = 3.2 dB TYP. @f = 1 000 MHz (LNA-mode)
: IIP3 = +9 dBm TYP. @f1 = 500 MHz, f2 = 505 MHz (LNA-mode)
: Lins = 1.7 dB TYP. @f = 1 000 MHz (Bypass-mode)
•
•
•
•
•
Operation frequency
Low noise
Low distortion
Low insertion loss
High-density surface mounting : 6-pin plastic TSON (T6N) package (1.5 × 1.5 × 0.37 mm)
APPLICATIONS
•
Low noise amplifier for the digital TV system, etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 3 kpcs/reel
μPD5756T6N-E2
μPD5756T6N-E2-A
6-pin plastic
TSON (T6N)
(Pb-Free)
C4C
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5756T6N
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 1 of 15
μPD5756T6N
PIN CONNECTIONS, MARKING AND INTERNAL BLOCK DIAGRAM
(Bottom View)
(Top View)
(Top View)
Pin No
Pin Name
Vcont
1
2
3
4
5
6
Bias
1
2
3
6
5
4
1
2
3
6
5
4
6
5
4
1
2
3
Control
GND
INPUT
OUTPUT
Load
VCC
Remark Exposed pad : GND
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Symbol
VCC
Vcont
Ptot
Conditions
TA = +25°C
Ratings
4.0
Unit
V
Mode Control Voltage
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
Input Power
TA = +25°C
TA = +85°C
4.0
V
Note
300
mW
°C
TA
−40 to +85
−55 to +150
+15
Tstg
°C
Pin
TA = +25°C,
dBm
ZS = ZL = 75 Ω
Note: Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage
Symbol
VCC
MIN.
3.1
1.0
−0.1
40
TYP.
3.3
－
MAX.
3.5
Unit
V
Mode Control Voltage (H)
Mode Control Voltage (L)
Operating Frequency
Vcont (H)
Vcont (L)
f
VCC
0.4
V
－
V
－
1 000
+85
0
MHz
°C
Operating Ambient Temperature
Input Power (LNA-mode) Note
TA
−40
－
+25
－
Pin
dBm
dBm
Input Power (Bypass-mode) Note
Note: TA = +25°C, ZS = ZL = 75 Ω
Pin
－
－
+10
ELECTRICAL CHARACTERISTICS 1 (DC Characteristics)
(TA = +25°C, VCC = 3.3 V, unless otherwise specified)
Parameter
Circuit Current 1
Symbol
Test Conditions
MIN.
16
–
TYP.
25
MAX.
Unit
mA
μA
μA
μA
ICC
1
2
Vcont = 3.3 V, No Signal (LNA-mode)
Vcont = 0 V, No Signal (Bypass-mode)
Vcont = 3.3 V, No Signal (LNA-mode)
Vcont = 0 V, No Signal (Bypass-mode)
34
1
Circuit Current 2
ICC
0.01
50
Mode Control Current 1
Mode Control Current 2
Icont
Icont
1
2
–
100
1
–
0.01
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 2 of 15
μPD5756T6N
ELECTRICAL CHARACTERISTICS 2 (LNA-mode)
(TA = +25°C, VCC = Vcont = 3.3 V, ZS = ZL = 75 Ω, unless otherwise specified)
Parameter
Power Gain 1
Symbol
GP1
Test Conditions
f = 40 MHz, Pin = –20 dBm
f = 1 000 MHz, Pin = –20 dBm
MIN.
10.5
10.5
–
TYP.
13
MAX.
15.5
15.5
4.2
Unit
dB
Power Gain 2
Noise Figure 1
GP2
13
dB
f = 40 MHz, ZS = ZL = 50 Ω, excluded
PCB and connector losses
NF1
3.2
dB
Note
f = 1 000 MHz, ZS = ZL = 50 Ω,
excluded PCB and connector losses
Noise Figure 2
NF2
–
3.2
4.2
dB
Note
Input Return Loss 1
RLin1
RLin2
f = 40 MHz, Pin = –20 dBm
f = 1 000 MHz, Pin = –20 dBm
f = 40 MHz, Pin = –20 dBm
f = 1 000 MHz, Pin = –20 dBm
f1 = 500 MHz, f2 = 505 MHz,
Pin = –20 dBm
7
7
9
–
–
–
–
–
dB
dB
Input Return Loss 2
10
10
12
+9
Output Return Loss 1
Output Return Loss 2
Input 3rd Order Intercept Point
RLout
RLout
IIP3
1
2
7
dB
7
dB
+5
dBm
Note: Input PCB and connector losses : 0.03 dB (at 40 MHz), 0.10 dB (at 1 000 MHz)
ELECTRICAL CHARACTERISTICS 3 (Bypass-mode)
(TA = +25°C, VCC = 3.3 V, Vcont = 0 V, ZS = ZL = 75 Ω, unless otherwise specified)
Parameter
Insertion Loss 1
Symbol
Test Conditions
f = 40 MHz, Pin = –10 dBm, excluded
PCB and connector losses
MIN.
TYP.
MAX.
Unit
Lins1
–
0.5
1.5
dB
Note
f = 1 000 MHz, Pin = –10 dBm,
Insertion Loss 2
Lins2
–
1.7
2.5
dB
excluded PCB and connector losses
Note
Input Return Loss 1
RLin1
RLin2
f = 40 MHz, Pin = –10 dBm
f = 1 000 MHz, Pin = –10 dBm
f = 40 MHz, Pin = –10 dBm
f = 1 000 MHz, Pin = –10 dBm
f1 = 500 MHz, f2 = 505 MHz,
Pin = –5 dBm
10
7
26
8
–
–
–
–
–
dB
dB
Input Return Loss 2
Output Return Loss 1
Output Return Loss 2
Input 3rd Order Intercept Point
RLout
RLout
IIP3
1
2
10
7
25
8
dB
dB
+20
+29
dBm
Note: Input-output PCB and connector losses : 0.06 dB (at 40 MHz), 0.20 dB (at 1 000 MHz)
STANDARD CHARACTERISTICS FOR REFERENCE 1 (LNA-mode)
(TA = +25°C, VCC = Vcont = 3.3 V, ZS = ZL = 75 Ω, unless otherwise specified)
Parameter
Symbol
ISL1
Test Conditions
f = 40 MHz, Pin = –20 dBm
f = 1 000 MHz, Pin = –20 dBm
Reference Value
Unit
dB
Isolation 1
Isolation 2
20
20
ISL2
dB
Gain 1 dB Compression Output
Power
PO (1 dB) f = 500 MHz
+10
dBm
STANDARD CHARACTERISTICS FOR REFERENCE 2 (Bypass-mode)
(TA = +25°C, VCC = 3.3 V, Vcont = 0 V, ZS = ZL = 75 Ω, unless otherwise specified)
Parameter
Symbol
Test Conditions
Reference Value
Note
Unit
PO (1 dB) f = 500 MHz
dBm
Gain 1 dB Compression Output
Power
Note: The input-output power characteristic is not saturated up to +15 dBm of input power.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 3 of 15
μPD5756T6N
TEST CIRCUIT
V
cont
6
5
4
V
CC
1
2
3
10 000 pF
μ
0.1 F
270 nH
OUTPUT
INPUT
10 000 pF
10 000 pF
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 4 of 15
μPD5756T6N
TYPICAL CHARACTERISTICS 1 (DC Characteristics)
(TA = +25°C, unless otherwise specified)
CIRCUIT CURRENT vs. OPERATING
AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
40
30
20
10
0
40
30
20
10
0
V
CC = 3.5 V
3.3 V
T = +85°C
A
3.1 V
+25°C
–40°C
V
CC = Vcont
V
CC = Vcont
RF = off
RF = off
0
1
2
3
4
25
Operating Ambient Temperature T
–50
–25
0
50
75
100
A
(°C)
Supply Voltage VCC (V)
CIRCUIT CURRENT vs.
MODE CONTROL VOLTAGE
MODE CONTROL CURRENT vs.
MODE CONTROL VOLTAGE
100
80
60
40
20
0
40
30
20
10
0
V
CC = 3.3 V
RF = off
T
A
= +85°C
+25°C
μ
T = +85°C
A
–40°C
+25°C
–40°C
V
CC = 3.3 V
RF = off
3.0
0
1.0
2.0
4.0
0
1.0
2.0
3.0
4.0
Mode Control Voltage Vcont (V)
Mode Control Voltage Vcont (V)
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 5 of 15
μPD5756T6N
TYPICAL CHARACTERISTICS 2 (LNA-mode)
(TA = +25°C, ZS = ZL = 75 Ω, unless otherwise specified)
NOISE FIGURE vs. OPERATING
NOISE FIGURE vs. SUPPLY VOLTAGE
AMBIENT TEMPERATURE
5
4
3
2
1
5
f = 500 MHz
40 MHz
f = 500 MHz
4
40 MHz
3
1 000 MHz
1 000 MHz
2
1
V
CC = Vcont
V
CC = Vcont = 3.3 V
Z
S
= Z
L
= 50 Ω
ZS
= Z
L
= 50 Ω
0
0
–50
–25
0
25
50
75
100
2.8
3.0
3.2
3.4
3.6
3.8
Operating Ambient Temperature T (°C)
A
Supply Voltage VCC (V)
NOISE FIGURE vs. FREQUENCY
NOISE FIGURE vs. FREQUENCY
5
4
3
2
1
5
4
3
2
1
T = +85°C
A
V
CC = Vcont = 3.3 V
V
CC = Vcont
Z
S
= Z = 50 Ω
L
Z
S
= Z = 50 Ω
L
V
CC = 3.5 V
3.3 V
+25°C
3.1 V
–40°C
0
0
0
0
200
400
600
800 1 000 1 200
200
400
600
800 1 000 1 200
Frequency f (MHz)
Frequency f (MHz)
POWER GAIN vs. OPERATING
AMBIENT TEMPERATURE
POWER GAIN vs. SUPPLY VOLTAGE
18
16
14
12
10
8
18
V
CC = Vcont
V
CC = Vcont = 3.3 V
16
14
12
10
8
f = 1 000 MHz
f = 500 MHz
500 MHz
1 000 MHz
40 MHz
50
40 MHz
2.8
3.0
3.2
3.4
3.6
3.8
–50
–25
0
25
75
(°C)
100
Supply Voltage VCC (V)
Operating Ambient Temperature T
A
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 6 of 15
μPD5756T6N
POWER GAIN vs. FREQUENCY
POWER GAIN vs. FREQUENCY
18
16
14
12
10
8
18
16
14
12
10
8
V
CC = Vcont
V
CC = Vcont = 3.3 V
V
CC = 3.5 V
T = –40°C
A
+25°C
3.3 V
3.1 V
+85°C
0
500
1 000
1 500
0
500
1 000
1 500
Frequency f (MHz)
Frequency f (MHz)
INPUT RETURN LOSS vs. FREQUENCY
INPUT RETURN LOSS vs. FREQUENCY
0
0
V
CC = Vcont
VCC = Vcont = 3.3 V
–5
–10
–15
–20
–25
–30
–5
–10
–15
–20
–25
–30
T = +85°C
A
V
CC = 3.1 V
+25°C
3.3 V
3.5 V
–40°C
0
500
1 000
1 500
0
500
1 000
1 500
Frequency f (MHz)
Frequency f (MHz)
OUTPUT RETURN LOSS vs. FREQUENCY
OUTPUT RETURN LOSS vs. FREQUENCY
0
0
VCC = Vcont = 3.3 V
V
CC = Vcont
–5
–10
–15
–20
–25
–30
–5
–10
–15
–20
–25
–30
T = +85°C
A
V
CC = 3.1 V
3.3 V
–40°C
3.5 V
500
+25°C
0
1 000
1 500
0
500
1 000
1 500
Frequency f (MHz)
Frequency f (MHz)
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 7 of 15
μPD5756T6N
ISOLATION vs. FREQUENCY
ISOLATION vs. FREQUENCY
0
0
–5
VCC = Vcont = 3.3 V
VCC = Vcont
–5
–10
–15
–20
–25
–30
–10
–15
–20
–25
–30
VCC = 3.1 V
TA = –40°C
+25°C
3.3 V
3.5 V
+85°C
0
500
1 000
1 500
0
500
1 000
1 500
Frequency f (MHz)
Frequency f (MHz)
K FACTOR vs. FREQUENCY
K FACTOR vs. FREQUENCY
VCC = Vcont = 3.3 V
3
2
1
0
3
2
1
0
VCC = Vcont
VCC = 3.3 V
TA = +85°C
+25°C
–40°C
3.5 V
3.1 V
500
Frequency f (MHz)
1 500
0
500
Frequency f (MHz)
1 000
1 500
0
1 000
OUTPUT POWER vs. INPUT POWER
POWER GAIN vs. INPUT POWER
20
10
20
15
10
5
0
–10
VCC = Vcont = 3.3 V
f = 500 MHz
VCC = Vcont = 3.3 V
f = 500 MHz
–20
0
–20
–10
0
10
–20
–10
0
10
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 8 of 15
μPD5756T6N
GAIN 1 dB COMPRESSION OUTPUT POWER
vs. OPERATING AMBIENT TEMPERATURE
GAIN 1 dB COMPRESSION OUTPUT
POWER vs. SUPPLY VOLTAGE
20
15
10
5
20
V
CC = Vcont
VCC = Vcont = 3.3 V
f = 500 MHz
f = 500 MHz
15
10
5
0
0
–50
–25
0
25
50
75
(°C)
100
2.8
3.0
3.2
3.4
3.6
3.8
Operating Ambient Temperature T
A
Supply Voltage VCC (V)
INPUT 3RD ORDER INTERCEPT POINT
vs. SUPPLY VOLTAGE
OUTPUT POWER, IM
3
vs. INPUT POWER
40
20
V
CC = Vcont
V
CC = Vcont = 3.3 V
f1 = 500 MHz
f2 = 505 MHz
f1 = 500 MHz
f2 = 505 MHz
20
0
15
10
5
Pout
–20
–40
–60
–80
–100
IM3
0
2.8
3.0
3.2
3.4
3.6
3.8
0
5
10 15
20
–30 –25 –20 –15 –10 –5
Input Power Pin (dBm)
Supply Voltage VCC (V)
INPUT 3RD ORDER INTERCEPT POINT
vs. OPERATING AMBIENT TEMPERATURE
20
VCC = Vcont = 3.3 V
f1 = 500 MHz
f2 = 505 MHz
15
10
5
0
–50
–25
0
25
50
75
(°C)
100
Operating Ambient Temperature T
A
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 9 of 15
μPD5756T6N
S-PARAMETERS 1 (LNA-mode)
(TA = +25°C, VCC = Vcont = 3.3 V, ZS = ZL = 75 Ω, monitored at connector on board)
S11-FREQUENCY
1 :
40 MHz 57.89 Ω –48.84 Ω
2 : 500 MHz 48.64 Ω –14.27 Ω
3 : 1 000 MHz 38.40 Ω 12.24 Ω
3
2
1
START: 10 MHz
STOP : 2 000 MHz
S22-FREQUENCY
1 :
2 : 500 MHz 53.95 Ω –13.04 Ω
3 : 1 000 MHz 46.63 Ω 4.15 Ω
40 MHz 38.73 Ω –12.11 Ω
3
2
1
START : 10 MHz
STOP : 2 000 MHz
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 10 of 15
μPD5756T6N
TYPICAL CHARACTERISTICS 3 (Bypass-mode)
(TA = +25°C, ZS = ZL = 75 Ω, unless otherwise specified)
INSERTION LOSS vs. FREQUENCY
INSERTION LOSS vs. FREQUENCY
0
–1
–2
–3
–4
–5
0
–1
–2
–3
–4
–5
V
cont = 0 V
V
CC = 3.3 V, Vcont = 0 V
T = –40°C, +25°C
A
V
CC = 3.5 V, 3.3 V, 3.1 V
+85°C
0
500
1 000
1 500
0
500
1 000
1 500
Frequency f (MHz)
Frequency f (MHz)
INPUT RETURN LOSS vs. FREQUENCY
INPUT RETURN LOSS vs. FREQUENCY
0
0
V
CC = 3.3 V, Vcont = 0 V
Vcont = 0 V
–5
–10
–15
–20
–25
–30
–5
–10
–15
–20
–25
–30
T
A
= +85°C
+25°C
V
CC = 3.5 V, 3.3 V, 3.1 V
–40°C
0
500
1 000
1 500
0
500
1 000
1 500
Frequency f (MHz)
Frequency f (MHz)
OUTPUT RETURN LOSS vs. FREQUENCY
OUTPUT RETURN LOSS vs. FREQUENCY
0
0
V
CC = 3.3 V, Vcont = 0 V
Vcont = 0 V
–5
–10
–15
–20
–25
–30
–5
–10
–15
–20
–25
–30
V
CC = 3.5 V, 3.3 V, 3.1 V
T
A
= +85°C
+25°C
–40°C
0
500
1 000
1 500
0
500
1 000
1 500
Frequency f (MHz)
Frequency f (MHz)
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 11 of 15
μPD5756T6N
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER, IM
3
vs. INPUT POWER
20
40
20
10
Pout
0
–20
0
–40
–60
IM3
–10
V
CC = 3.3 V, Vcont = 0 V
–80
f1 = 500 MHz
f2 = 505 MHz
V
CC = 3.3 V, Vcont = 0 V
f = 500 MHz
10
–100
–20
20
30
40
–20
–10
0
10
–10
0
20
Input Power Pin (dBm)
Input Power Pin (dBm)
INPUT 3RD ORDER INTERCEPT POINT
vs. SUPPLY VOLTAGE
INPUT 3RD ORDER INTERCEPT POINT
vs. OPERATING AMBIENT TEMPERATURE
40
30
20
40
30
20
VCC = 3.3 V, Vcont = 0 V
Vcont = 0 V
f1 = 500 MHz
f2 = 505 MHz
f1 = 500 MHz
f2 = 505 MHz
10
–50
10
2.8
100
3.0
3.2
Supply Voltage VCC (V)
3.4
3.6
3.8
0
50
Operating Ambient Temperature T (°C)
A
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 12 of 15
μPD5756T6N
S-PARAMETERS 2 (Bypass-mode)
(TA = +25°C, VCC = 3.3 V, Vcont = 0 V, ZS = ZL = 75 Ω, monitored at connector on board)
S11-FREQUENCY
1 :
40 MHz 78.51 Ω
–6.19 Ω
2 : 500 MHz 48.91 Ω –10.37 Ω
3 : 1 000 MHz 34.97 Ω
16.79 Ω
3
1
2
START : 10 MHz
STOP : 2 000 MHz
S22-FREQUENCY
1 :
40 MHz 78.30 Ω
–6.19 Ω
–8.53 Ω
20.18 Ω
2 : 500 MHz 49.41 Ω
3 : 1 000 MHz 37.36 Ω
3
1
2
START : 10 MHz
STOP : 2 000 MHz
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 13 of 15
μPD5756T6N
PACKAGE DIMENSIONS
6-PIN PLASTIC TSON (T6N) (UNIT: mm)
(Top View)
(Side View)
(Bottom View)
0.3 0.07
1.5 0.1
(0.24)
+0.03
0.37
0.2 0.1
0.7 0.1
–0.05
Remark A>0
( ) : Reference value
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 14 of 15
μPD5756T6N
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
(3) All the ground terminals should be connected to the ground plane as close as possible.
(4) The bypass capacitor should be attached to VCC line.
(5) Do not supply DC voltage to INPUT pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature) : 260°C or below
IR260
Time at peak temperature
: 10 seconds or less
: 60 seconds or less
: 120 30 seconds
: 3 times
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
Partial Heating
Peak temperature (terminal temperature)
Soldering time (per side of device)
: 350°C or below
: 3 seconds or less
HS350
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
CAUTION
Do not use different soldering methods together.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 15 of 15
Revision History
μPD5756T6N Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Oct 04, 2011
－
First edition issued
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2011 Renesas Electronics Corporation. All rights reserved.
Colophon 1.1
相关型号：
©2020 ICPDF网 联系我们和版权申明