RJK2055DPA [RENESAS]

Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
RJK2055DPA
型号: RJK2055DPA
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Silicon N Channel MOS FET High Speed Power Switching
硅N沟道MOS FET高速电源开关

开关 电源开关
文件: 总4页 (文件大小:75K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RJK2055DPA  
Silicon N Channel MOS FET  
High Speed Power Switching  
REJ03G1735-0100  
Rev.1.00  
Sep 16, 2008  
Features  
Low on-resistance  
Low drive current  
High density mounting  
Outline  
RENESAS Package code: PWSN0008DA-A  
(Package name: WPAK)  
5
6
7 8  
D D D D  
8
4
7
6
5
1, 2, 3 Source  
4 Gate  
5, 6, 7, 8 Drain  
4
G
1
2
3
S
1
S S  
3
2
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
200  
V
V
±30  
20  
A
Note1  
Drain peak current  
ID (pulse)  
IDR  
40  
A
Body-drain diode reverse drain current  
20  
A
Note1  
Body-drain diode reverse drain peak current  
Avalanche current  
IDR (pulse)  
40  
A
Note3  
IAP  
9
5.4  
A
Note3  
Avalanche energy  
EAR  
mJ  
W
°C/W  
°C  
°C  
Channel dissipation  
Pch Note2  
θch-c  
Tch  
30  
Channel to case thermal impedance  
Channel temperature  
4.17  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW 10 µs, duty cycle 1%  
2. Value at Tc = 25°C  
3. STch = 25°C, Tch 150°C  
REJ03G1735-0100 Rev.1.00 Sep 16, 2008  
Page 1 of 3  
RJK2055DPA  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
V(BR)DSS  
IDSS  
Min  
200  
Typ  
Max  
Unit  
V
Test conditions  
Drain to source breakdown voltage  
Zero gate voltage drain current  
Gate to source leak current  
Gate to source cutoff voltage  
ID = 10 mA, VGS = 0  
1
µA  
µA  
V
VDS = 200 V, VGS = 0  
VGS = ±30 V, VDS = 0  
VDS = 10 V, ID = 1 mA  
ID = 10 A, VGS = 10 V Note4  
IGSS  
±1  
VGS(off)  
RDS(on)  
2.5  
4.5  
0.069  
Static drain to source on state  
resistance  
0.054  
Input capacitance  
Ciss  
Coss  
Crss  
td(on)  
tr  
2400  
245  
55  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
VDS = 25 V  
VGS = 0  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
f = 1 MHz  
37  
ID = 10 A  
VGS = 10 V  
Rise time  
17  
RL = 10 Ω  
Rg = 10 Ω  
Turn-off delay time  
td(off)  
tf  
64  
Fall time  
17  
Total gate charge  
Qg  
38  
VDD = 160 V  
VGS = 10 V  
Gate to source charge  
Gate to drain charge  
Body-drain diode forward voltage  
Body-drain diode reverse recovery time  
Qgs  
Qgd  
VDF  
trr  
11.5  
9
ID = 20 A  
IF = 20 A, VGS = 0 Note4  
0.91  
145  
1.40  
ns  
IF = 20 A, VGS = 0  
diF/dt = 100 A/µs  
Notes: 4. Pulse test  
REJ03G1735-0100 Rev.1.00 Sep 16, 2008  
Page 2 of 3  
RJK2055DPA  
Package Dimensions  
Package Name  
WPAK  
JEITA Package Code  
RENESAS Code  
PWSN0008DA-A  
Previous Code  
WPAKV  
MASS[Typ.]  
0.075g  
Unit: mm  
4.21Typ  
1.27Typ  
0.8Max  
5.1 0.2  
3.9 0.2  
0.04Min  
1.27Typ  
0.2Typ  
0.635Max  
0.4 0.06  
4.9 0.1  
(Ni/Pd/Au plating)  
Notice:The reverse pattern of die-pad  
support lead described above exists.  
Ordering Information  
Part No.  
Quantity  
Shipping Container  
RJK2055DPA-00-J0  
2500 pcs  
Taping  
REJ03G1735-0100 Rev.1.00 Sep 16, 2008  
Page 3 of 3  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Notes:  
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes  
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but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.  
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and regulations, and procedures required by such laws and regulations.  
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damages arising out of such applications.  
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movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages  
arising out of the use of Renesas products beyond such specified ranges.  
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rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage  
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and  
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alone is very difficult, please evaluate the safety of the final products or system manufactured by you.  
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any other inquiries.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
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© 2008. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .7.2  

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