RJK2062JPK [RENESAS]
200 V - 80 A - N Channel Power MOS FET High Speed Power Switching; 200 V - 80 A - N沟道功率MOS FET高速电源开关
| 型号： | RJK2062JPK |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 200 V - 80 A - N Channel Power MOS FET High Speed Power Switching |
| 文件： | 总7页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJK2062JPK
200 V - 80 A - N Channel Power MOS FET
High Speed Power Switching
R07DS0488EJ0100
Rev.1.00
Sep 19, 2012
Features
For Automotive applications
AEC-Q101 compliant
Low on-resistance : RDS(on) = 17 m typ.
Low input capacitance : Ciss = 6800 pF typ
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
2, 4
4
D
1. Gate
2. Drain
3. Source
4. Drain
1 G
S
3
1
2
3
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
200
Unit
V
20
V
80
A
Drain peak current
ID (pulse) Note1
160
A
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
IDR
80
A
IDR (pulse) Note1
160
A
2
Note
IAP
40
A
2
Note
Avalanche energy
EAR
107
mJ
W
C
C
Channel dissipation
Pch Note3
Tch Note4
Tstg
180
Channel temperature
175
Storage temperature
–55 to +150
Notes: 1. PW 10s duty cycle 1%
2. Tch = 25C, Rg 50
3. Tc = 25C
4. AEC-Q101 compliant
Thermal Impedance Characteristics
Channel to case thermal impedance ch-c: 0.833C/W
R07DS0488EJ0100 Rev.1.00
Sep 19, 2012
Page 1 of 6
RJK2062JPK
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Symbol
IGSS
Min
—
Typ
—
Max
10
10
Unit
A
A
V
Test Conditions
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
VGS = 20 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA , VDS = 10 V
ID = 40 A, VGS = 10 V Note5
IDSS
—
—
VGS(off)
RDS(on)
2.5
—
—
3.5
22
Static drain to source on state
resistance
17
m
Input capacitance
Ciss
Coss
Crss
Qg
—
—
—
—
—
—
—
—
—
—
—
—
6800
1200
190
95
—
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
VDS = 10V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Total gate charge
—
—
VDD = 25 V, VGS = 10 V,
ID = 40 A
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Qgs
Qgd
td(on)
tr
28
—
15
—
35
—
ID = 40 A, RL = 0.75 ,
VGS = 10 V, RG = 4.7
11
—
Turn-off delay time
Fall time
td(off)
tf
90
—
8.5
0.9
180
—
Body-drain diode forward voltage
VDF
trr
1.17
—
IF = 80 A, VGS = 0 Note5
Body-drain diode reverse recovery
time
ns
IF = 80 A, VGS = 0
diF/dt = 100 A/s
Note: 5. Pulse test
R07DS0488EJ0100 Rev.1.00
Sep 19, 2012
Page 2 of 6
RJK2062JPK
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
250
1000
100
Tc = 25°C
200
150
100
50
10
1
DC Operation
(Tc = 25°C)
PW = 10 ms
(1shot)
0.1
Operation in this
area is limited by
RDS(on)
0.01
0.001
0
100
0.1
1
10
1000
50
100
150
200
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
100
10
100
80
60
40
20
Tc = 25°C
Pulse Test
VDS = 10 V
Pulse Test
10 V
5 V
4.6 V
1
4.4 V
4.3 V
Tc = 175°C
25°C
0.1
−40°C
0.01
0.001
4.1 V
VGS = 0 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source on State Resistance vs.
Gate to Source Voltage
Drain to Source on State Resistance
vs. Drain Current
60
100
Tc = 25°C
VGS = 10 V
Pulse Test
Tc = 175°C
50
40
30
20
10
0
10
25°C
−40°C
ID = 40 A
Pulse Test
1
0
4
8
12
16
20
1
10
100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
R07DS0488EJ0100 Rev.1.00
Sep 19, 2012
Page 3 of 6
RJK2062JPK
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source on State Resistance
vs. Temperature
50
100000
10000
Tc = 25°C
VGS = 0
f = 1 MHz
ID = 40 A
VGS = 10 V
Pulse Test
40
30
Ciss
Coss
Crss
1000
20
10
0
100
10
−50
0
50
100
150
200
0
5
10
15
20
25
30
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Dynamic Input Characteristics
100
20
100
80
60
40
20
Tc = 25°C
Pulse Test
VDD = 10 V
25 V
50 V
VGS
80
60
16
12
8
VDS
10 V
40
20
VGS = 0 V, −5 V
4
0
VDD = 50 V
25 V
10 V
Tc = 25°C
ID = 80 A
0
0.4
0.8
1.2
1.6
2.0
40
80
120
160
200
0
Source to Drain Voltage VSD (V)
Gate Charge Qg (nC)
Maximum Avalanche Energy vs.
Channel Temperature Derating
200
160
120
80
IAP = 40 A
VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
40
0
25
75
125
175
Channel Temperature Tch (°C)
R07DS0488EJ0100 Rev.1.00
Sep 19, 2012
Page 4 of 6
RJK2062JPK
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
D = 1
0.5
1
0.2
0.1
θch – c(t) = γs (t) • θch – c
θch – c = 0.833°C/W, Tc = 25°C
PW
T
0.01
P
DM
D =
PW
T
0.001
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
VDSS
VDSS VDD
1
2
L
2
L • IAP •
EAR
=
VDS
Monitor
–
IAP
Monitor
V(BR)DSS
Rg
VDD
IAP
D. U. T
VDS
ID
Vin
50 Ω
15 V
VDD
0
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
10%
10%
Vin
RL
Vout
4.7 Ω
10%
VDD
= 50 V
Vin
10 V
90%
90%
t
t
t
f
d(off)
d(on)
t
r
R07DS0488EJ0100 Rev.1.00
Sep 19, 2012
Page 5 of 6
RJK2062JPK
Preliminary
Package Dimensions
Package Name
TO-3P
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Previous Code
MASS[Typ.]
5.0g
TO-3P / TO-3PV
Unit: mm
4.8 0.2
15.6 0.3
φ
3.2 0.2
1.5
1.6
2.0
1.4 Max
2.8
1.0 0.2
0.6 0.2
0.9
1.0
3.6
5.45 0.5
5.45 0.5
Ordering Information
Orderable Part Number
Quantity
Shipping Container
RJK2062JPK-00-T0
360 pcs
Box (Tube)
Note: The symbol of 2nd "-" is occasionally presented as "#".
R07DS0488EJ0100 Rev.1.00
Sep 19, 2012
Page 6 of 6
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
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