RJK2508DPK-E [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | RJK2508DPK-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总7页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RJK2508DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0508-0200
Rev.2.00
Feb.10.2005
Features
•
•
•
Low on-resistance
Low leakage current
High speed switching
Outline
PRSS0004ZE-A
(Previous code: TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Symbol
VDSS
VGSS
ID
Ratings
Unit
250
±30
V
V
Drain current
50
A
Note1
Drain peak current
ID (pulse)
IDR
100
A
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
50
A
Note1
IDR (pulse)
100
A
Note3
IAP
17
A
Note3
Avalanche energy
EAR
18.0
150
mJ
W
°C/W
°C
°C
Channel dissipation
Pch Note2
θch-c
Tch
Channel to case thermal impedance
Channel temperature
0.833
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.2.00 Feb.10.2005 page 1 of 6
RJK2508DPK
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min
250
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to Source breakdown voltage
Zero Gate voltage Drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
ID = 10 mA, VGS = 0
—
1
µA
µA
V
VDS = 250 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 25 A, VDS = 10 V Note4
ID = 25 A, VGS = 10 VNote4
IGSS
—
—
±0.1
4.5
—
VGS(off)
|yfs|
3.0
19
—
32
S
Static Drain to Source on state
resistance
RDS(on)
—
0.056
0.064
Ω
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
—
2600
370
43
—
—
—
—
—
—
—
—
—
—
1.5
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V
VGS = 0
Output capacitance
f = 1 MHz
Reverse transfer capacitance
Turn-on delay time
40
ID = 25 A
VGS = 10 V
Rise time
210
110
145
60
RL = 5 Ω
Rg = 10 Ω
Turn-off delay time
td(off)
tf
Fall time
Total Gate charge
Qg
VDD = 200 V
VGS = 10 V
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Qgs
Qgd
VDF
trr
15
ID = 50 A
IF = 50 A, VGS = 0 Note4
26
1.0
180
1.2
ns
µC
IF = 50 A, VGS = 0
diF/dt = 100 A/µs
Body-Drain diode reverse recovery
charge
Qrr
Notes: 4. Pulse test
Rev.2.00 Feb.10.2005 page 2 of 6
RJK2508DPK
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
200
150
100
50
300
100
30
10
DC Operation
(Tc = 25°C)
3
1
0.3
0.1
PW = 10 ms (1shot)
Operation in
this area is
limited by RDS(on)
0.03
0.01
0.003
0.001
Ta = 25°C
30 100 300
0
0.1 0.3
1
3
10
1000
50
100
150
200
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
100
80
60
40
20
100
80
60
40
20
8 V
8.5 V
10 V
Pulse Test
V
= 10 V
DS
7.5 V
Pulse Test
7 V
6.5 V
6 V
5.5 V
= 5 V
75°C
25°C
V
GS
Tc = −25°C
0
0
2
4
6
8
10
4
8
12
16
20
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1
8
6
V
= 10 V
Pulse Test
GS
0.5
0.2
0.1
4
2
ID = 50 A
0.05
25 A
10 A
0.00
0.01
Pulse Test
0
12
Gate to Source Voltage VGS (V)
4
8
16
20
1
3
10
30
100 300 1000
Drain Current ID (A)
Rev.2.00 Feb.10.2005 page 3 of 6
RJK2508DPK
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
100
0.2
Pulse Test
Tc = −25°C
30
10
0.16
ID = 50 A
25°C
0.12
0.08
75°C
25 A
3
1
10 A
0.04
0
0.3
0.1
VDS = 10 V
Pulse Test
VGS = 10 V
25 50 75 100 125 150
0.1
0.3
1
3
10
30
100
−25
0
Case Temperature Tc (°C)
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
500
100000
VGS = 0
30000 f = 1 MHz
200
100
50
10000
Ciss
3000
1000
300
20
10
5
Coss
Crss
100
di / dt = 100 A / µs
30
2
1
V
GS = 0, Ta = 25°C
10
0
1
3
10
30 100 300 1000
50
100
150
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
ID = 50 A
Switching Characteristics
10000
400
300
200
100
16
12
8
VGS = 10 V, VDD = 125 V
PW = 5 µs, duty < 1 %
Rg = 10 Ω
VDD = 200 V
100 V
VGS
t
r
t
f
50 V
1000
100
VDS
t
f
t
d(off)
t
4
0
d(on)
VDD = 200 V
100 V
50 V
t
r
10
20
40
60
80
100
0.1 0.3
1
3
10
30
100
0
Drain Current ID (A)
Gate Charge Qg (nC)
Rev.2.00 Feb.10.2005 page 4 of 6
RJK2508DPK
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
4
3
2
100
Pulse Test
ID = 10 mA
1 mA
80
60
40
20
0.1 mA
10 V
5 V
1
0
V
= 0 V
GS
VDS = 10 V
25 50 75 100 125 150
Case Temperature Tc (°C)
0
0.4
0.8
1.2
1.6
2.0
-25
0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 0.833°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
Pulse Width PW (s)
100 m
1
10
Switching Time Test Circuit
Vin Monitor
Waveform
Vout
Monitor
90%
D.U.T.
R
L
10%
10%
90%
Vin
10Ω
Vin
V
DD
= 125 V
Vout
10%
10 V
90%
td(off)
td(on)
t
f
tr
Rev.2.00 Feb.10.2005 page 5 of 6
RJK2508DPK
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
Previous Code
MASS[Typ.]
5.0g
PRSS0004ZE-A
TO-3P / TO-3PV
Unit: mm
4.8 ± 0.2
15.6 ± 0.3
3.2 ± 0.2
φ
1.5
1.6
2.0
1.4 Max
2.8
1.0 ± 0.2
0.6 ± 0.2
0.9
1.0
3.6
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part Name
Quantity
Shipping Container
RJK2508DPK-E
30 pcs
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Feb.10.2005 page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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