RJK2511DPK [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | RJK2511DPK |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总7页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RJK2511DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1486-0400
Rev.4.00
Nov 27, 2007
Features
•
•
•
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
VGSS
ID
Ratings
250
Unit
V
V
Gate to source voltage
±30
Drain current
65
A
Note1
Drain peak current
ID (pulse)
IDR
200
A
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
65
A
Note1
IDR (pulse)
200
A
Note3
IAP
22
A
Note3
Avalanche energy
EAR
30.2
200
mJ
W
°C/W
°C
°C
Channel dissipation
Pch Note2
θch-c
Tch
Channel to case thermal impedance
Channel temperature
0.625
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 1 of 6
RJK2511DPK
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min
250
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
ID = 10 mA, VGS = 0
—
1
µA
µA
V
VDS = 250 V, VGS = 0
IGSS
—
—
±0.1
4.5
—
VGS = ±30 V, VDS = 0
VGS(off)
|yfs|
3.0
30
—
VDS = 10 V, ID = 1 mA
ID = 32.5 A, VDS = 10 V Note4
ID = 32.5 A, VGS = 10 V Note4
51
S
Static drain to source on state
resistance
RDS(on)
—
0.028
0.034
Ω
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
—
4900
690
85
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V
VGS = 0
Output capacitance
Reverse transfer capacitance
Turn-on delay time
f = 1 MHz
—
52
—
ID = 32.5 A
VGS = 10 V
Rise time
200
160
150
120
28
—
RL = 3.9 Ω
Rg = 10 Ω
Turn-off delay time
td(off)
tf
—
Fall time
—
Total gate charge
Qg
—
VDD = 200 V
VGS = 10 V
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Qgs
Qgd
VDF
trr
—
ID = 65 A
IF = 65 A, VGS = 0 Note4
51
—
0.93
200
1.5
1.50
—
ns
µC
IF = 65 A, VGS = 0
diF/dt = 100 A/µs
Body-drain diode reverse recovery
charge
Qrr
—
Notes: 4. Pulse test
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 2 of 6
RJK2511DPK
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
400
300
200
100
1000
300
Ta = 25°C
100
100
µ
s
30
10
PW = 10 ms
(1shot)
3
1
DC Operation
(Tc = 25°C)
0.3
0.1
Operation in this
area is limited by
RDS(on)
0.03
0.01
30
100 300
0
1
3
10
1000
50
100
150
200
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
6.3 V
Typical Transfer Characteristics
100
80
60
40
20
100
80
60
40
20
VDS = 10 V
Pulse Test
10 V
8 V
5.9 V
5.5 V
Pulse Test
5 V
Tc = 75°C
25°C
VGS = 0 V
−25°C
0
0
4
8
12
16
20
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
4
0.1
VGS = 10 V
Pulse Test
0.05
3
2
1
0.02
0.01
ID = 65 A
0.005
0.002
32.5 A
10 A
Pulse Test
100 300 1000
Drain Current ID (A)
0.001
0
4
8
12
16
20
1
3
10
30
Gate to Source Voltage VGS (V)
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 3 of 6
RJK2511DPK
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
0.1
0.08
0.06
0.04
100
VGS = 10 V
Pulse Test
Tc = −25°C
25°C
30
10
ID = 65 A
32.5 A
3
1
10 A
75°C
0.02
0
0.3
0.1
VDS = 10 V
Pulse Test
0.1
0.3
1
3
10 30
100
−25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
500
100000
30000
10000
VGS = 0
f = 1 MHz
200
100
50
3000
1000
Ciss
20
10
5
300
100
Coss
Crss
di / dt = 100 A / µs
30
10
2
1
VGS = 0, Ta = 25°C
0.1
0.3
1.0
3 10 30 100
0
50
100
150
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
ID = 65 A
Switching Characteristics
400
300
200
100
16
12
8
10000
1000
100
VGS = 10 V, VDD = 125 V
PW = 5 µs, duty ≤ 1 %
RG = 10 Ω
VGS
VDD = 200 V
100 V
50 V
t
f
t
r
VDS
t
d(off)
t
f
t
d(off)
t
d(on)
4
0
VDD = 200 V
100 V
50 V
t
r
10
0.1
0
40
80
120
160
200
0.3
1
3
10
30
100
Gate Charge Qg (nC)
Drain Current ID (A)
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 4 of 6
RJK2511DPK
Reverse Drain Current vs.
Source to Drain Voltage
Gate to Source Cutoff Voltage
vs. Case Temperature
5
4
3
2
100
80
VDS = 10 V
I
D = 10 mA
1 mA
60
40
20
10 V
0.1 mA
V
GS = 0 V
5 V
1
0
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
-25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
ch – c (t) =
γ
s (t) •
θch – c
θch – c = 0.625
°C/W, Tc = 25°C
PW
T
PDM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Waveform
Vout
Monitor
90%
D.U.T.
RL
10%
10%
Vin
10 Ω
Vout
10%
VDD
Vin
= 125V
10 V
90%
90%
t
t
t
d(off)
t
f
d(on)
r
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 5 of 6
RJK2511DPK
Package Dimensions
Package Name
TO-3P
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Previous Code
MASS[Typ.]
5.0g
TO-3P / TO-3PV
Unit: mm
4.8 0.2
15.6 0.3
φ
3.2 0.2
1.5
1.6
2.0
1.4 Max
2.8
1.0 0.2
0.6 0.2
0.9
1.0
3.6
5.45 0.5
5.45 0.5
Ordering Information
Part No.
Quantity
Shipping Container
RJK2511DPK-00-T0
360 pcs
Box (Tube)
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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