RJK2057DPA-00-J0 [RENESAS]
20A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, WPAK-8;
| 型号： | RJK2057DPA-00-J0 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 20A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, WPAK-8 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
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3.
4.
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8.
9.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
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guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
RJK2057DPA
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1761-0300
Rev.3.00
Apr 09, 2009
Features
•
•
•
Low on-resistance
Low drive current
High density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5
6
7 8
D D D D
8
4
7
6
5
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
4
G
1
2
3
S
1
S S
3
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
200
V
V
±30
20
A
Note1
Drain peak current
ID (pulse)
IDR
40
A
Body-drain diode reverse drain current
20
A
Note1
Body-drain diode reverse drain peak current
Avalanche current
IDR (pulse)
40
A
Note3
IAP
9
5.4
A
Note3
Avalanche energy
EAR
mJ
W
°C/W
°C
°C
Channel dissipation
Pch Note2
θch-c
Tch
30
Channel to case thermal impedance
Channel temperature
4.17
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
REJ03G1761-0300 Rev.3.00 Apr 09, 2009
Page 1 of 6
RJK2057DPA
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min
200
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
ID = 10 mA, VGS = 0
—
1
µA
µA
V
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 10 A, VGS = 10 V Note4
IGSS
—
—
±1
VGS(off)
RDS(on)
2.5
—
—
4.5
0.085
Static drain to source on state
resistance
0.068
Ω
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
1250
245
25
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V
VGS = 0
Output capacitance
Reverse transfer capacitance
Turn-on delay time
f = 1 MHz
—
23
—
ID = 10 A
VGS = 10 V
Rise time
46
—
RL = 10 Ω
Rg = 10 Ω
Turn-off delay time
td(off)
tf
35
—
Fall time
28
—
Total gate charge
Qg
19
—
VDD = 160 V
VGS = 10 V
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Qgs
Qgd
VDF
trr
6.9
5.3
0.90
145
—
ID = 20 A
IF = 20 A, VGS = 0 Note4
—
1.35
—
ns
IF = 20 A, VGS = 0
diF/dt = 100 A/µs
Notes: 4. Pulse test
REJ03G1761-0300 Rev.3.00 Apr 09, 2009
Page 2 of 6
RJK2057DPA
Main Characteristics
Typical Output Characteristics
Pulse Test
Ta = 25°C
Maximum Safe Operation Area
20
16
12
8
100
10
5.6 V
5.8 V
5.4 V
6 V
8 V,
10 V
5.2 V
5 V
1
Operation in this
area is limited by
RDS(on)
0.1
4.8 V
4.6 V
4
0.01
0.001
Tc = 25°C
1 shot
VGS = 4.4 V
0
0.1
1
10
100
1000
1
2
3
4 5
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Typical Transfer Characteristics
1
Pulse Test
VGS = 10 V
Ta = 25°C
VDS = 10 V
Pulse Test
10
1
Tc = 75°C
0.1
25°C
−25°C
0.1
0.01
0.01
0
2
4
6
8
10
1
10
100
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Body-Drain Diode Reverse
Recovery Time (Typical)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
1000
100
10
0.25
Pulse Test
VGS = 10 V
0.2
0.15
0.1
ID = 20 A
3 A
10 A
0.05
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
0
1
10
100
-25
0
25 50 75 100 125 150
Reverse Drain Current IDR (A)
Case Temperature Tc (°C)
REJ03G1761-0300 Rev.3.00 Apr 09, 2009
Page 3 of 6
RJK2057DPA
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Dynamic Input Characteristics (Typical)
10000
V
800
16
VGS
ID = 20 A
Ta = 25 °C
GS = 0
f = 1 MHz
Ta = 25°C
Ciss
600
400
12
8
VDD = 160 V
1000
100
10
100 V
50 V
Coss
Crss
V
200
4
0
DS
VDD = 160 V
100 V
50 V
8
16
24
32
40
0
20
40
60
80
100
0
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
5
4
3
2
20
VDS = 10 V
VGS = 0
Pulse Test
Ta = 25 °C
ID = 10 mA
1 mA
16
12
0.1 mA
8
4
1
0
0
-25
0
25 50 75 100 125 150
0.4
0.8
1.2
1.6
2.0
Case Temperature Tc (°C)
Source to Drain Voltage VSD (V)
REJ03G1761-0300 Rev.3.00 Apr 09, 2009
Page 4 of 6
RJK2057DPA
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
0.2
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
0.1
ch – c = 4.17°C/W, Tc = 25°C
0.05
PW
T
PDM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Waveform
Vout
Monitor
90%
D.U.T.
RL
10%
10%
Vin
10 Ω
Vout
10%
VDD
= 100 V
Vin
10 V
90%
90%
t
t
r
t
d(off)
t
f
d(on)
REJ03G1761-0300 Rev.3.00 Apr 09, 2009
Page 5 of 6
RJK2057DPA
Package Dimensions
Package Name
WPAK
JEITA Package Code
RENESAS Code
PWSN0008DA-A
Previous Code
WPAKV
MASS[Typ.]
0.075g
Unit: mm
−
4.21Typ
1.27Typ
0.8Max
5.1 0.2
3.9 0.2
0.04Min
1.27Typ
0.2Typ
0.635Max
0.4 0.06
4.9 0.1
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Ordering Information
Part No.
Quantity
Shipping Container
RJK2057DPA-00-J0
2500 pcs
Taping
REJ03G1761-0300 Rev.3.00 Apr 09, 2009
Page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
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http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2009. Renesas Technology Corp., All rights reserved. Printed in Japan.
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