HAT1038R [RENESAS]
Silicon P Channel Power MOS FET High Speed Power Switching; 硅P沟道功率MOS FET高速电源开关
| 型号： | HAT1038R |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon P Channel Power MOS FET High Speed Power Switching |
| 文件： | 总8页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
HAT1038R, HAT1038RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
REJ03G1150-0600
Rev.6.00
Aug 25, 2009
Features
•
•
•
•
For Automotive Application (at Type Code "J")
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
7 8
D D
5 6
D D
5
6
7
2
G
4
G
8
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
4
3
2
1
S 1
S 3
MOS1
MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Value
–60
±20
–3.5
–28
–3.5
—
Unit
V
V
A
Note 1
Drain peak current
ID (pulse)
IDR
A
Body-drain diode reverse drain current
A
Note 4
Avalanche current
Avalanche energy
HAT1038R
IAP
—
A
HAT1038RJ
HAT1038R
HAT1038RJ
–3.5
—
Note 4
EAR
—
mJ
W
W
°C
°C
1.05
2
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Pch Note 2
Pch Note 3
Tch
3
150
Tstg
–55 to +150
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 1 of 7
HAT1038R, HAT1038RJ
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V (BR) DSS
V (BR) GSS
IGSS
Min
–60
±20
—
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage
Gate to source leak voltage
Gate to source leak current
ID = –10 mA, VGS = 0
IG = ±100 μA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –60 V, VGS = 0
—
—
V
—
±10
–1
μA
μA
μA
μA
μA
V
Zero gate voltage drain
current
HAT1038R
IDSS
—
—
HAT1038RJ
HAT1038R
HAT1038RJ
IDSS
—
—
–0.1
—
Zero gate voltage drain
current
IDSS
—
—
VDS = –48 V, VGS = 0
Ta = 125°C
IDSS
—
—
–10
–2.2
0.15
0.23
—
Gate to source cutoff voltage
VGS (off)
RDS (on)
RDS (on)
|yfs|
–1.2
—
—
VDS = –10 V, ID = –1 mA
ID = –2 A, VGS = –10 V Note 5
ID = –2 A, VGS = –4 V Note 5
ID = –2 A, VDS = –10 V Note 5
VDS = –10 V
Static drain to source on state resistance
0.12
0.16
4.5
600
290
75
Ω
—
Ω
Forward transfer admittance
Input capacitance
3
S
Ciss
Coss
Crss
td (on)
tr
—
—
pF
pF
pF
ns
ns
ns
ns
V
VGS = 0
Output capacitance
—
—
f = 1 MHz
Reverse transfer capacitance
Turn-on delay time
—
—
—
11
—
VGS = –10 V, ID = –2 A,
VDD ≅ –30 V
Rise time
—
30
—
Turn-off delay time
td (off)
tf
—
100
55
—
Fall time
—
—
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
—
–0.98 –1.28
70
IF = –3.5 A, VGS = 0 Note 5
IF = –3.5 A, VGS = 0
diF/dt = 50 A/μs
trr
—
—
ns
Note: 5. Pulse test
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 2 of 7
HAT1038R, HAT1038RJ
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–100
4.0
3.0
2.0
1.0
0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
10 μs
–30
–10
–3
–1
Operation in
this area is
limited by RDS (on)
–0.3
–0.1
Ta = 25°C
1 shot pulse
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
0
50
100
150
200
Drain to Source Voltage VDS (V)
Note 6:
Ambient Temperature Ta (°C)
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
Typical Output Characteristics
–10
–8
–6
–4
–2
0
–10
–8
–6
–4
–2
0
–10 V
–5 V
VDS = 10 V
Pulse Test
–3.5 V
–4 V
Pulse Test
–3 V
25°C
Tc = 75°C
VGS = –2.5 V
–25°C
0
–2
–4
–6
–8
–10
0
–1
–2
–3
–4
–5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1
–0.5
Pulse Test
Pulse Test
0.5
–0.4
–0.3
–0.2
–0.1
0
VGS = –4 V
–10 V
0.2
0.1
ID = –2 A
0.05
–1 A
–0.5 A
0.02
0.01
–0.1 –0.3
–1
–3
–10 –30 –100
0
–4
–8
–12
–16
–20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 3 of 7
HAT1038R, HAT1038RJ
Preliminary
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
20
10
5
0.5
0.4
0.3
0.2
0.1
0
Pulse Test
Tc = –25°C
ID = –2 A
–1 A
25°C
–0.5 A
2
1
75°C
VGS = –4 V
–2 A
0.5
–0.5 A, –1 A
VDS = 10 V
Pulse Test
–10 V
0.2
–0.1 –0.2
–40
0
40
80
120
160
–0.5 –1 –2
–5 –10
Case Temperature Tc (°C)
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
500
2000
1000
500
VGS = 0
f = 1 MHz
Ciss
200
100
50
Coss
200
100
50
20
Crss
10
5
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
20
10
0
–10
–20
–30
–40
–50
–0.1 –0.2
–0.5 –1
–2 –5 –10
Drain to Source Voltage VDS (V)
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
Switching Characteristics
0
–20
1000
300
0
VDD = –10 V
–25 V
–50 V
–4
t
d(off)
VGS
100
–40
–8
t
f
VDD = –50 V
–25 V
–10 V
30
10
VDS
t
r
t
–60
–12
–16
–20
d(on)
–80
3
1
VGS = –10 V, VDD = –30 V
PW = 5 μs, duty ≤ 1 %
ID = –3.5 A
–100
0
8
16
24
32
40
–0.1 –0.2
–0.5 –1
–2
–5 –10
Gate Charge Qg (nc)
Drain Current ID (A)
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 4 of 7
HAT1038R, HAT1038RJ
Preliminary
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
–10
–8
–6
–4
–2
0
2.5
2.0
1.5
1.0
0.5
0
IAP = –3.5 A
VDD = –25 V
L = 100 μH
duty < 0.1 %
Rg ≥ 50 Ω
–10 V
VGS = 0, 5 V
–5 V
Pulse Test
–1.6 –2.0
Source to Drain Voltage VSD (V)
0
–0.4
–0.8
–1.2
25
50
75
100
Channel Temperature Tch (°C)
125
150
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D = 1
0.5
1
0.1
0.01
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
PW
D =
PDM
T
0.001
0.0001
PW
T
10 μ
100 μ
1 m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D = 1
0.5
1
0.1
0.01
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
PW
D =
PDM
T
0.001
0.0001
PW
T
10 μ
100 μ
1 m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 5 of 7
HAT1038R, HAT1038RJ
Preliminary
Avalanche Test Circuit
Avalanche Waveform
VDSS
VDSS – VDD
1
2
2
L
EAR
=
• L • IAP •
VDS
Monitor
IAP
Monitor
V(BR)DSS
IAP
Rg
VDD
D.U.T
VDS
ID
Vin
–15 V
50 Ω
VDD
0
Switching Time Test Circuit
Switching Time Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
90%
RL
90%
10%
VDD
= –30 V
Vin
–10 V
50 Ω
10%
Vout
t
t
t
t
f
d(on)
r
d(off)
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 6 of 7
HAT1038R, HAT1038RJ
Preliminary
Package Dimensions
Package Name
SOP-8
JEITA Package Code
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
P-SOP8-3.95 × 4.9-1.27
1
D
*
bp
5
8
1
Index mark
NOTE)
4
Terminal cross section
(Ni/Pd/Au plating)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Z
3
bp
*
M
x
e
Dimension in Millimeters
Reference
Symbol
Min Nom Max
D
E
4.90
3.95
5.3
L1
A2
A1
A
0.10
0.14 0.25
1.75
0.34 0.40 0.46
bp
b1
c
0.15 0.20 0.25
c1
L
0° 8°
5.80 6.10 6.20
1.27
y
HE
e
Detail F
x
0.25
y
0.1
0.75
Z
L
L1
0.40 0.60 1.27
1.08
Ordering Information
Part Name
Quantity
Shipping Container
HAT1038R-EL-E
HAT1038RJ-EL-E
2500 pcs
2500 pcs
Taping
Taping
REJ03G1150-0600 Rev.6.00 Aug 25, 2009
Page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2377-3473
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2009. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.2
相关型号：
©2020 ICPDF网 联系我们和版权申明