FS7VS-5 [RENESAS]
MITSUBISHI Nch POWER MOSFET; 三菱N沟道功率MOSFET
| 型号： | FS7VS-5 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | MITSUBISHI Nch POWER MOSFET |
| 文件： | 总5页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS7VS-5
HIGH-SPEED SWITCHING USE
FS7VS-5
OUTLINE DRAWING
Dimensions in mm
r
10.5MAX.
4.5
1.3
+0.3
–0
0
1
5
0.5
0.8
q
w e
w r
q GATE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................250V
¡rDS (ON) (MAX) .............................................................. 0.80Ω
¡ID ............................................................................................ 7A
e
TO-220S
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
VGS = 0V
VDS = 0V
250
V
V
±30
7
21
A
IDM
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
A
PD
75
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
1.2
Tstg
—
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7VS-5
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
250
±30
—
Typ.
—
Max.
—
V
V
(BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V
(BR) GSS Gate-source breakdown voltage IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
Drain-source leakage current VDS = 250V, VGS = 0V
Gate-source threshold voltage ID = 1mA, VDS = 10V
V
V
—
—
IGSS
IDSS
Gate-source leakage current
—
±10
1
µA
mA
V
—
—
VGS (th)
rDS (ON)
VDS (ON)
yfs
2
3
4
Drain-source on-state resistance ID = 3A, VGS = 10V
Drain-source on-state voltage ID = 3A, VGS = 10V
—
0.63
1.90
3.5
370
80
0.80
2.40
—
Ω
—
V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
ID = 3A, VDS = 10V
2.3
—
S
Ciss
—
pF
pF
pF
ns
ns
ns
ns
V
Coss
Crss
VDS = 25V, VGS = 0V, f = 1MHz
—
—
—
16
—
td (on)
tr
—
15
—
—
22
—
VDD = 150V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
Fall time
—
50
—
—
26
—
VSD
Source-drain voltage
Thermal resistance
IS = 3A, VGS = 0V
Channel to case
—
1.5
—
2.0
1.67
Rth (ch-c)
—
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
100
80
60
40
20
0
5
3
tw=10µs
2
101
7
100µs
1ms
5
3
2
100
7
10ms
DC
5
3
TC = 25°C
Single Pulse
2
10–1
7
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
0
50
100
150
200
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V 7V
PD =
75W
20
16
12
8
10
VGS = 20V
PD =
TC = 25°C
Pulse Test
75W
10V
8
6
4
2
0
TC = 25°C
Pulse Test
6V
7V
6V
5V
4
5V
0
0
10
20
30
40
50
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7VS-5
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
32
24
16
8
5
4
3
2
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
VGS = 10V
ID
= 14A
20V
1
0
7A
3A
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
0
0
3
4
8
12
16
20
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
8
101
7
5
T
C
V
= 25°C
DS = 50V
Pulse Test
3
2
TC = 25°C
75°C
6
125°C
100
7
5
4
3
2
2
V
DS = 10V
Pulse Test
0
10–1
4
8
12
16
20
100
2
3
5 7 101
2
3
5 7 102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
103
7
5
Tch = 25°C
Ciss
5
V
DD = 150V
GS = 10V
V
3
R
GEN = RGS = 50Ω
2
3
2
102
7
Coss
Crss
5
102
7
5
3
2
t
t
d(off)
f
101
7
Tch = 25°C
f = 1MHz
5
3
2
VGS = 0V
3
t
r
2
t
d(on)
100
101
10–1
2
3
5 7 100
2
3
5 7 101
5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7VS-5
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
20
16
12
8
V
GS = 0V
Tch = 25°C
= 7A
Pulse Test
V
DS = 50V
I
D
TC = 125°C
100V
75°C
25°C
200V
4
4
0
0
0
4
8
12
16
20
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5
5.0
4.0
3.0
2.0
1.0
0
V
DS = 10V
= 1mA
V
GS = 10V
I
D
ID = 1/2ID
Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
1.4
1.2
1.0
0.8
0.6
0.4
V
GS = 0V
5
I
D = 1mA
3
0.1
D=1
0.5
2
100
7
0.2
5
3
P
DM
2
0.05
0.02
0.01
10–1
7
tw
T
tw
T
5
D=
Single Pulse
3
2
10–2
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
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