2SJ387L [RENESAS]
Silicon P Channel MOS FET; 硅P沟道MOS场效应晶体管型号: | 2SJ387L |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Silicon P Channel MOS FET |
文件: | 总8页 (文件大小:88K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SJ387(L), 2SJ387(S)
Silicon P Channel MOS FET
REJ03G0862-0200
(Previous: ADE-208-1196)
Rev.2.00
Sep 07, 2005
Description
High speed power switching
Features
•
•
•
•
Low on-resistance
Low drive current
2.5 V Gate drive device can be driven from 3 V Source
Suitable for Switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-B
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (L)-(2) )
(Package name: DPAK (S) )
4
4
D
1. Gate
1
2
3
2. Drain
3. Source
4. Drain
G
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 7
2SJ387(L), 2SJ387(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Value
–20
Unit
V
±10
V
–10
A
Note 1
Drain peak current
ID (pulse)
–40
A
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch Note 2
Tch
–10
A
20
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V (BR) DSS
V (BR) GSS
IGSS
Min
–20
±10
—
Typ
—
Max
—
Unit
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
V
V
ID = –10 mA, VGS = 0
IG = ±200 µA, VDS = 0
VGS = ±6.5 V, VDS = 0
VDS = –16 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –5 A, VGS = –4 V Note 3
ID = –5 A, VGS = –2.5 V Note 3
ID = –5 A, VDS = –10 V Note 3
VDS = –10 V
—
—
—
±10
–100
–1.5
0.07
0.1
—
µA
µA
V
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
IDSS
—
—
VGS (off)
RDS (on)
RDS (on)
|yfs|
–0.5
—
—
0.05
0.07
12
Ω
—
Ω
Forward transfer admittance
Input capacitance
7
S
Ciss
—
1170
860
310
20
—
pF
pF
pF
ns
ns
ns
ns
V
V
GS = 0
Output capacitance
Coss
Crss
td (on)
tr
—
—
f = 1 MHz
Reverse transfer capacitance
Turn-on delay time
—
—
—
—
ID = –5 A
VGS = –4 V
RL = 2 Ω
Rise time
—
325
350
425
–1.0
240
—
Turn-off delay time
td (off)
tf
—
—
Fall time
—
—
Body to drain diode forward voltage
Body to drain diode reverse recovery time
VDF
—
—
IF = –10 A, VGS = 0
IF = –10 A, VGS = 0
diF/dt = 20 A/µs
trr
—
—
ns
Note: 3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 7
2SJ387(L), 2SJ387(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–100
–30
40
30
20
10
0
10 µs
100 µs
–10
–3
–1
Operation in
this area is
limited by RDS (on)
–0.3
–0.1
Ta = 25°C
0
50
100
150
200
–0.5 –1 –2
–5 –10 –20
–50
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
–10
–8
–6
–4
–2
0
–20
–16
–12
–8
–10 V
Pulse Test
VDS = –10 V
Pulse Test
–2.5 V
–5 V
–4V
–2 V
Tc = –25°C
–4
25°C
75°C
VGS = –1.5 V
0
0
–2
–4
–6
–8
–10
0
–1
–2
–3
–4
–5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
–0.5
1
Pulse Test
Pulse Test
0.5
–0.4
–0.3
–0.2
–0.1
0
0.2
0.1
VGS = –2.5 V
ID = –5 A
0.05
–4 V
–2 A
–1 A
0.02
0.01
0
–2
–4
–6
–8
–10
–0.5 –1 –2
–5 –10 –20
–50
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 7
2SJ387(L), 2SJ387(S)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
50
0.20
0.16
0.12
0.08
0.04
0
VDS = –10 V
Pulse Test
Pulse Test
20
10
5
Tc = –25°C
ID = –5 A
–1 A, –2 A
25°C
75°C
VGS = –2.5 V
2
1
–5 A
–2 A
–1 A
80
–4 V
0.5
–0.1 –0.2
–40
0
40
120
160
–0.5 –1 –2
–5 –10
Case Temperature Tc (°C)
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
500
10000
5000
200
100
2000
1000
500
Ciss
Coss
50
Crss
200
100
20
10
di / dt = 20 A / µs
VGS = 0, Ta = 25°C
VGS = 0
f = 1 MHz
–0.1 –0.3
–1
–3
–10 –30 –100
0
–10
–20
–30
–40 –50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
0
–10
–20
–30
–40
–50
1000
500
0
t
d(off)
VDD = –5 V
–10 V
–15 V
t
f
–4
200
100
50
VDD = –5 V
–10 V
–15 V
VDS
–8
t
r
VGS
–12
–16
–20
VGS = –4 V, VDD = –10 V
PW = 5 µs, duty ≤ 1 %
20
10
t
d(on)
ID = –10 A
80
Gate Charge Qg (nc)
0
20
40
60
100
–0.1 –0.3
–1
–3
–10
–30 –100
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
2SJ387(L), 2SJ387(S)
Reverse Drain Current vs.
Source to Drain Voltage
–20
–16
–12
–8
Pulse Test
–
5 V
–
3 V
VGS = 0, 5 V
–4
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D = 1
0.5
1
0.3
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
PW
D =
PDM
T
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
VDD
= –10 V
Vin
–4 V
50 Ω
10%
10%
Vout
t
t
t
t
f
d(on)
r
d(off)
Rev.2.00 Sep 07, 2005 page 5 of 7
2SJ387(L), 2SJ387(S)
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
0.42g
Unit: mm
PRSS0004ZD-B
DPAK(L)-(2) / DPAK(L)-(2)V
6.5 0.5
5.4 0.5
2.3 0.2
0.55 0.1
1.15 0.1
1.2 0.3
0.8 0.1
(0.7)
0.55 0.1
0.55 0.1
2.29 0.5
2.29 0.5
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Package Name
MASS[Typ.]
0.28g
Unit: mm
DPAK(S) / DPAK(S)V
2.3 0.2
6.5 0.5
5.4 0.5
(5.1)
0.55 0.1
(0.1)
(0.1)
0 – 0.25
(1.2)
0.55 0.1
1.0 Max.
0.8 0.1
2.29 0.5
2.29 0.5
Rev.2.00 Sep 07, 2005 page 6 of 7
2SJ387(L), 2SJ387(S)
Ordering Information
Part Name
Quantity
Shipping Container
2SJ387L-E
3200 pcs
3000 pcs
Box (Sack)
Taping
2SJ387STL-E
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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