2SJ388L [ETC]
;
ETC 
2SJ388 L , 2SJ388 S
Silicon P Channel MOS FET
Application
DPAK–2
High speed power switching
4
4
3
Features
1
2
• Low on–resistance
• High speed switching
• Low drive current
• 2.5 V Gate drive device can be driven from 3 V
Source
2, 4
1
2
3
1. Gate
1
2. Drain
3. Source
4. Drain
• Suitable for Switching regulator, DC – DC
converter
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
V
–30
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
±20
V
GSS
———————————————————————————————————————————
Drain current
I
–10
A
D
———————————————————————————————————————————
Drain peak current
I
*
–40
A
D(pulse)
———————————————————————————————————————————
Body–drain diode reverse drain current
I
–10
A
DR
———————————————————————————————————————————
Channel dissipation
Pch**
20
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25°C
*
2SJ388 L , 2SJ388 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown
V
–30
—
—
V
I
= –10 mA, V
= 0
(BR)DSS
D
GS
voltage
———————————————————————————————————————————
Gate to source breakdown
V
±20
—
—
V
I
= ±100 µA, V
= 0
(BR)GSS
G
DS
voltage
———————————————————————————————————————————
Gate to source leak current
I
—
—
±10
µA
V
= ±16 V, V
= 0
GSS
GS
DS
———————————————————————————————————————————
Zero gate voltage drain current
I
—
—
–100
µA
V
= –25 V, V
= 0
DSS
DS
GS
———————————————————————————————————————————
Gate to source cutoff voltage
———————————————————————————————————————————
V
–0.5
—
–1.5
V
I
= –1 mA, V
= –10 V
GS(off)
D
DS
Static drain to source on state
R
—
0.06
0.08
Ω
I = –5 A
DS(on)
D
resistance
V
= –10 V *
GS
————————————————————————
—
0.12
0.2
Ω
I = –5 A
D
V
= –2.5 V *
GS
———————————————————————————————————————————
Forward transfer admittance
|y |
4.5
8
—
S
I = –5 A
fs
D
V
= –10 V *
DS
———————————————————————————————————————————
Input capacitance
Ciss
—
970
—
pF
V
= –10 V
DS
————————————————————————————————
Output capacitance
Coss
—
620
—
pF
V
= 0
GS
————————————————————————————————
Reverse transfer capacitance
Crss
—
250
—
pF
f = 1 MHz
———————————————————————————————————————————
Turn–on delay time
t
—
10
—
ns
I = –5 A
d(on)
D
————————————————————————————————
Rise time
t
—
65
—
ns
V
= –10 V
GS
r
————————————————————————————————
Turn–off delay time
t
—
250
—
ns
R = 6 Ω
L
d(off)
————————————————————————————————
Fall time
t
—
240
—
ns
f
———————————————————————————————————————————
Body–drain diode forward
V
—
–1.0
—
V
I = –10 A, V
= 0
DF
F
GS
voltage
———————————————————————————————————————————
Body–drain diode reverse
recovery time
t
—
85
—
µs
I
= –10 A, V
= 0,
rr
GS
F
diF / dt = 20 A / µs
———————————————————————————————————————————
* Pulse Test
2SJ388 L , 2SJ388 S
Power vs. Temperature Derating
30
20
10
0
50
100
150
Case Temperature Tc (°C)
相关型号：
2SJ389(S)TL
Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
HITACHI
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