2SJ387S [KEXIN]
Silicon P-Channel MOSFET; 硅P沟道MOSFET
| 型号： | 2SJ387S |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon P-Channel MOSFET |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMDType
MOSFET
Silicon P-Channel MOSFET
2SJ387S
TO-252
Unit: mm
Features
+0.15
-0.15
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Low on-resistance
Low drive current
2.5 V Gate drive device can be driven from 3 V Source
Suitable for Switching regulator, DC - DC converter
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
1 Gate
2.3
4.60
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
Rating
Unit
V
VDSS
VGSS
ID
-20
10
Gate to source voltage
Drain current (DC)
V
-10
A
Drain current(pulse) *
Power dissipation
ID
-40
A
PD
20
W
Channel temperature
Storage temperature
Tch
Tstg
150
-55 to +150
* PW
10 s; d
1%.
1
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SMDType
MOSFET
2SJ387S
Electrical Characteristics Ta = 25
Parameter
Symbol
VDSS
VGSS
IDSS
Testconditons
ID=-10mA,VGS=0
Min
-20
10
Typ
Max
Unit
V
Drain to source breakdown voltage
Gate to source breakdown voltage
Drain cut-off current
V
IG= 200
A ,VDS=0
VDS=-16V,VGS=0
VGS= 6.5V,VDS=0
-100
10
A
Gate leakage current
IGSS
A
Gate to source cutoff voltage
Forward transfer admittance
VGS(off) VDS=-10V,ID=-1mA
-0.5
7
-1.5
V
VDS=-10V,ID=-5A
VGS=-4V,ID=-5A
VGS=-2.5V,ID=-5A
12
0.05 0.07
S
Yfs
Drain to source on-state resistance
RDS(on)
0.07
1170
860
310
20
0.1
Input capacitance
Ciss
Coss
Crss
td(on)
tr
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS=-10V,VGS=0,f=1MHZ
VGS(on)=-4V,ID=--5A RL=2
VGS=-10V,ID=-1A,VDD=-48V
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
325
350
425
6.5
Turn-off delay time
td(off)
tf
Fall time
Total Gate Charge
Qg
Gate to Source Charge
Gate Drain Charge
Qgs
Qgd
VDF
trr
4.5
2.0
Body to drain diode forward voltage
Body to drain diode reverse recovery time
IF=-10A,VGS=0
-1.0
240
ns
IF=-10A,VGS=0,diF/dt=20A/
s
2
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