2SJ388(L) [RENESAS]
0.2ohm, POWER, FET, DPAK-3;
| 型号： | 2SJ388(L) |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 0.2ohm, POWER, FET, DPAK-3 |
| 文件： | 总5页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SJ388(L), 2SJ388(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
·
·
·
·
·
Low on-resistance
High speed switching
Low drive current
2.5 V Gate drive device can be driven from 3 V Source
Suitable for Switching regulator, DC - DC converter
Outline
2SJ388(L), 2SJ388(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
–30
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
±20
V
ID
–10
A
1
Drain peak current
ID(pulse)
*
–40
A
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
IDR
–10
A
Pch*2
Tch
20
W
°C
°C
150
Tstg
–55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
2
2SJ388(L), 2SJ388(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS –30
—
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS ±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
µA
V
VGS = ±16 V, VDS = 0
VDS = –25 V, VGS = 0
ID = –1 mA, VDS = –10 V
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
—
—
–100
–1.5
0.08
–0.5
—
—
Static drain to source on state RDS(on)
resistance
0.06
ID = –5 A
VGS = –10 V*1
—
0.12
8
0.2
—
ID = –5 A
VGS = –2.5 V*1
Forward transfer admittance
|yfs|
4.5
S
ID = –5 A
VDS = –10 V*1
Input capacitance
Ciss
—
—
—
—
—
—
—
—
970
620
250
10
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = –10 V
VGS = 0
Output capacitance
Coss
Reverse transfer capacitance Crss
f = 1 MHz
ID = –5 A
VGS = –10 V
RL = 6
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
65
Turn-off delay time
Fall time
250
240
–1.0
Body to drain diode forward
voltage
VDF
IF = –10 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
85
—
µs
IF = –10 A, VGS = 0,
diF/dt = 20 A/µs
Note: 1. Pulse Test
3
2SJ388(L), 2SJ388(S)
4
2SJ388(L), 2SJ388(S)
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
5
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