2SJ388(L) [RENESAS]

0.2ohm, POWER, FET, DPAK-3;
2SJ388(L)
型号: 2SJ388(L)
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

0.2ohm, POWER, FET, DPAK-3

文件: 总5页 (文件大小:21K)
中文:  中文翻译
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2SJ388(L), 2SJ388(S)  
Silicon P-Channel MOS FET  
Application  
High speed power switching  
Features  
·
·
·
·
·
Low on-resistance  
High speed switching  
Low drive current  
2.5 V Gate drive device can be driven from 3 V Source  
Suitable for Switching regulator, DC - DC converter  
Outline  
2SJ388(L), 2SJ388(S)  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
–30  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
VGSS  
±20  
V
ID  
–10  
A
1
Drain peak current  
ID(pulse)  
*
–40  
A
Body to drain diode reverse drain current  
Channel dissipation  
Channel temperature  
Storage temperature  
IDR  
–10  
A
Pch*2  
Tch  
20  
W
°C  
°C  
150  
Tstg  
–55 to +150  
Notes: 1. PW 10 µs, duty cycle 1%  
2. Value at Tc = 25°C  
2
2SJ388(L), 2SJ388(S)  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Drain to source breakdown  
voltage  
V(BR)DSS –30  
V
ID = –10 mA, VGS = 0  
Gate to source breakdown  
voltage  
V(BR)GSS ±20  
V
IG = ±100 µA, VDS = 0  
Gate to source leak current  
IGSS  
±10  
µA  
µA  
V
VGS = ±16 V, VDS = 0  
VDS = –25 V, VGS = 0  
ID = –1 mA, VDS = –10 V  
Zero gate voltage drain current IDSS  
Gate to source cutoff voltage VGS(off)  
–100  
–1.5  
0.08  
–0.5  
Static drain to source on state RDS(on)  
resistance  
0.06  
ID = –5 A  
VGS = –10 V*1  
0.12  
8
0.2  
ID = –5 A  
VGS = –2.5 V*1  
Forward transfer admittance  
|yfs|  
4.5  
S
ID = –5 A  
VDS = –10 V*1  
Input capacitance  
Ciss  
970  
620  
250  
10  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = –10 V  
VGS = 0  
Output capacitance  
Coss  
Reverse transfer capacitance Crss  
f = 1 MHz  
ID = –5 A  
VGS = –10 V  
RL = 6  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
65  
Turn-off delay time  
Fall time  
250  
240  
–1.0  
Body to drain diode forward  
voltage  
VDF  
IF = –10 A, VGS = 0  
Body to drain diode reverse  
recovery time  
trr  
85  
µs  
IF = –10 A, VGS = 0,  
diF/dt = 20 A/µs  
Note: 1. Pulse Test  
3
2SJ388(L), 2SJ388(S)  
4
2SJ388(L), 2SJ388(S)  
When using this document, keep the following in mind:  
1. This document may, wholly or partially, be subject to change without notice.  
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part  
of this document without Hitachi’s permission.  
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any  
other reasons during operation of the user’s unit according to this document.  
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and  
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any  
intellectual property claims or other problems that may result from applications based on the examples  
described herein.  
5. No license is granted by implication or otherwise under any patents or other rights of any third party or  
Hitachi, Ltd.  
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL  
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.  
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are  
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL  
APPLICATIONS.  
5

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