2SJ387(S)-(1) [RENESAS]
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,10A I(D),TO-252AA;
| 型号： | 2SJ387(S)-(1) |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,10A I(D),TO-252AA |
| 文件： | 总12页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SJ387(L), 2SJ387(S)
Silicon P-Channel MOS FET
ADE-208-1196 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
Low drive current
2.5 V Gate drive device can be driven from 3 V Source
Suitable for Switching regulator, DC - DC converter
Outline
DPAK-2
4
4
1
2
3
1
2
3
D
1. Gate
G
2. Drain
3. Source
4. Drain
S
2SJ387(L), 2SJ387(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
–20
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
±10
V
ID
–10
A
1
Drain peak current
ID(pulse)
*
–40
A
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
IDR
–10
A
Pch*2
Tch
20
W
°C
°C
150
Tstg
–55 to +150
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
2
2SJ387(L), 2SJ387(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
V(BR)GSS
IGSS
–20
—
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown
voltage
±10
—
—
V
IG = ±200 µA, VDS = 0
Gate to source leak current
—
—
±10
µA
µA
V
VGS = ±6.5 V, VDS = 0
VDS = –16 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –5 A
Zero gate voltage drain current IDSS
—
—
–100
–1.5
0.07
Gate to source cutoff voltage
VGS(off)
–0.5
—
—
Static drain to source on state RDS(on)
resistance
0.05
V
GS = –4 V*1
ID = –5 A
GS = –2.5 V*1
ID = –5 A
DS = –10 V*1
—
7
0.07
12
0.1
—
V
Forward transfer admittance
|yfs|
S
V
Input capacitance
Output capacitance
Ciss
—
—
—
—
—
—
—
—
1170
860
310
20
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = –10 V
VGS = 0
Coss
Reverse transfer capacitance Crss
f = 1 MHz
ID = –5 A
VGS = –4 V
RL = 2
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
325
350
425
–1.0
Turn-off delay time
Fall time
Body to drain diode forward
voltage
VDF
IF = –10 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
240
—
ns
IF = –10 A, VGS = 0,
diF/dt = 20 A/µs
Note: 1. Pulse Test
3
2SJ387(L), 2SJ387(S)
Power vs. Temperature Derating
Maximum Safe Operation Area
40
30
20
10
–100
10 µs
–30
–10
100 µs
–3
–1
Operation in
this area is
limited by R
DS(on)
–0.3
–0.1
Ta = 25 °C
0
50
100
150
200
–0.5 –1
–2
–5 –10 –20
–50
Drain to Source Voltage
V
(V)
DS
Case Temperature Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
= –10 V
–20
–16
–12
–8
–10
–8
–6
–4
–2
–10 V
Pulse Test
–2.5 V
V
DS
Pulse Test
–5 V
–4 V
–2 V
Tc = –25 °C
–4
V
GS
= –1.5 V
25 °C
75 °C
0
–2
–4
–6
–8
–10
0
–1
–2
–3
–4
(V)
GS
–5
Drain to Source Voltage
V
(V)
Gate to Source Voltage
V
DS
4
2SJ387(L), 2SJ387(S)
Static Drain to Source on State Resistance
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
vs. Drain Current
1
–0.5
–0.4
–0.3
–0.2
–0.1
Pulse Test
Pulse Test
0.5
0.2
0.1
V
GS
= –2.5 V
–4 V
I
= –5 A
D
0.05
–2 A
–1 A
0.02
0.01
–0.5 –1 –2
–5 –10 –20
(A)
–50
0
–2
–4
–6
–8
–10
(V)
Gate to Source Voltage
V
Drain Current
I
GS
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
50
0.2
Pulse Test
20
10
5
0.16
0.12
0.08
0.04
Tc = –25 °C
25 °C
I
= –5 A
D
75 °C
V
= –2.5 V
GS
–1, –2 A
2
–5 A
–2 A
–1 A
1
–4 V
40
V
= –10 V
DS
Pulse Test
0.5
0
–40
–0.1 –0.2
–0.5 –1 –2 –5 –10
0
80
120
160
Drain Current I
(A)
D
Case Temperature Tc (°C)
5
2SJ387(L), 2SJ387(S)
Typical Capacitance vs.
Drain to Source Voltage
Body to Drain Diode Reverse
Recovery Time
10000
5000
1000
500
2000
1000
200
100
Ciss
Coss
500
50
Crss
200
100
20
10
V
= 0
GS
di / dt = 20 A / µs
f = 1 MHz
V
GS
= 0, Ta = 25 °C
0
–10
–20
–30
–40 –50
–0.1 –0.3
–1
–3
–10 –30 –100
Reverse Drain Current
I
(A)
Drain to Source Voltage V
(V)
DR
DS
Switching Characteristics
Dynamic Input Characteristics
1000
500
0
–10
–20
–30
0
t
d(off)
V
= –5 V
–10 V
–15 V
DD
t
f
–4
–8
–12
200
100
50
V
V
DD
= –5 V
–10 V
–15 V
DS
t
r
V
GS
V
= –4 V, V
= –10 V
DD
GS
PW = 5 µs, duty < 1 %
–40
–50
–16
–20
20
10
t
d(on)
I
= –10 A
D
–0.1 –0.3
–1
–3
–10 –30 –100
(A)
0
80
20
40
60
100
Drain Current
I
Gate Charge Qg (nc)
D
6
2SJ387(L), 2SJ387(S)
Reverse Drain Current vs.
Source to Drain Voltage
–20
–16
–12
–8
Pulse Test
–5 V
–3 V
V
= 0, 5 V
GS
–4
0
–0.4 –0.8
–1.2 –1.6
–2.0
(V)
Source to Drain Voltage
V
SD
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 6.25 °C/W, Tc = 25 °C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
7
2SJ387(L), 2SJ387(S)
Switching Time Test Circuit
Waveforms
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
R
L
90%
90%
V
DD
Vin
–4 V
90%
10%
50Ω
= –10 V
10%
Vout
td(off)
td(on)
t
f
tr
8
2SJ387(L), 2SJ387(S)
Package Dimensions
As of January, 2001
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
1.15 ± 0.1
1.2 ± 0.3
0.8 ± 0.1
(0.7)
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
DPAK (L)-(2)
JEDEC
—
EIAJ
—
Mass (reference value)
0.42 g
9
2SJ387(L), 2SJ387(S)
As of January, 2001
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
6.5 ± 0.5
5.4 ± 0.5
(4.9)
0 – 0.25
1.15 ± 0.1
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
DPAK (S)-(1),(2)
—
Conforms
0.28 g
Mass (reference value)
10
2SJ387(L), 2SJ387(S)
As of January, 2001
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
6.5 ± 0.5
5.4 ± 0.5
(5.1)
(0.1)
(0.1)
0 – 0.25
1.15 ± 0.1
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
DPAK (S)-(3)
—
EIAJ
Conforms
0.28 g
Mass (reference value)
11
2SJ387(L), 2SJ387(S)
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
12
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2SJ387(S)TR
Power Field-Effect Transistor, 10A I(D), 20V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
HITACHI
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