2SC5852 [RENESAS]
Silicon NPN Epitaxial Planar; NPN硅外延平面
| 型号： | 2SC5852 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon NPN Epitaxial Planar |
| 文件： | 总6页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5852
Silicon NPN Epitaxial Planar
REJ03G0762-0100
(Previous ADE-208-1481)
Rev.1.00
Aug.10.2005
Features
VHF amplifier, local oscillator
Outline
RENESAS Package code: PTSP0003ZA-A
(Package name: CMPAK R
)
3
1. Emitter
Base
lector
f Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
C
Ratings
Unit
V
30
20
V
4
20
V
mA
mW
°C
°C
Collector power dissipation
Junction temperature
PC*
150
Tj
150
Storage temperature
Tstg
–55 to +150
*Value on the glass epom x 0.7 mm)
Rev.1.00 Aug 10, 2005 page 1 of 5
2SC5852
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEO
Min
30
20
4
Typ
Max
Unit
V
Test conditions
IC = 10 µA, IE = 0
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
V
0.5
0.5
200
µA
µA
VCE = 10 V, RBE = ∞
VEB = 2 V, IC =0
Emitter cutoff current
IEBO
hFE*1
DC current transfer ratio
60
VCE = 6 V, IC = 1 mA
IC = 20 mA, IB = 4 mA
VCE = 6 V, IC = 1 mA
Collector to emitter saturation voltage
Base to emitter voltage
VCE(sat)
VBE
0.17
0.72
940
0.9
V
V
Gain bandwidth product
fT
MHz VCE = 6V, IC = 5 mA
pF VCB = 10 V, IE = 0, f = 1 MHz
Collector output capacitance
Cob
Notes: 1. The 2SC5852 is grouped by hFE as follows.
Grade
Mark
hFE
B
C
QB
60 to 120
QC
100 to 200
Rev.1.00 Aug 10, 2005 page 2 of 5
2SC5852
Main Characteristics
Maximum Collector Dissipation Curve
Typical Output Characteristics
150
100
50
20
16
12
8
275
250
225
200
175
150
125
50
4
25 µA
* Value on the glass epoxy board
(10 mm x 10 mm x 0.7 mm)
I
= 0
B
0
50
100
150
0
4
8
12
16
20
Ambient Temperature Ta (°C)
CollEmitter Voltage VCE (V)
r Ratio vs.
nt
Typical Output Characteristics
5
4
3
2
1
20
10 µ
20
0
0
4
8
0.1 0.2 0.5 1.0
2
5
10 20
Collector to
Collector Current IC (mA)
Typical Tras (1)
Typical Transfer Characteristics (2)
20
16
12
5
4
3
2
V
= 6 V
V
= 6 V
CE
Pulse test
CE
8
4
0
1
0
0.6
0.7
0.8
0.6
0.7
0.8
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
Rev.1.00 Aug 10, 2005 page 3 of 5
2SC5852
Gain Bandwidth Product vs.
Collector Current
Collector Output Capacitance vs.
Collector to Base Voltage
1,000
800
1.5
1.3
1.1
0.9
f = 1 MHz
V
= 6 V
CE
I
= 0
E
600
400
200
0
0.7
0.5
0.1 0.2 0.5 1.0
2
5
10
20
0.3
1.0
3
10
30
Collector to Base Voltage VCB (V)
Colletor Current IC (mA)
Rev.1.00 Aug 10, 2005 page 4 of 5
2SC5852
Package Dimensions
JEITA Package Code
SC-70
RENESAS Code
Package Name
MASS[Typ.]
0.006g
PTSP0003ZA-A
CMPAK / CMPAKV
D
A
e
Q
c
E
HE
LP
L
A
A
L1
A3
Reference
Symbol
Dimension in Millimeters
b
Min
0.8
0
Nom
Max
1.1
0.1
1.0
x
S
A
M
e
A
A
A
A
1
2
3
0.8
0.9
0.25
0.32
0.3
A2
A1
b
0.25
0.1
0.4
A
b
1
c
0.13
0.11
2.0
0.15
c
1
D
1.8
2.2
S
1.15
1.25
0.65
2.1
1.35
b
H
1.8
0.3
0.1
0.2
2.4
0.7
E
L
b
1
l1
L
0.5
1
c1
L
0.6
P
0.05
0.45
x
c
b
e
2
1
1.5
0.2
l
0.9
1
A-A Section
Q
Ordering Information
Part Name
Shipping Container
2SC5852QBTL-E
2SC5852QCTL-E
3000
mm Reel, 8 mm Emboss Taping
Note: For some grades, prease contact the Renesas sales office to check the state of
production before
Rev.1.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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