2SC5857 [TOSHIBA]

HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV; 水平偏转输出高清晰度电视,数字电视,背投电视
2SC5857
型号: 2SC5857
厂家: TOSHIBA    TOSHIBA
描述:

HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV
水平偏转输出高清晰度电视,数字电视,背投电视

晶体 晶体管 功率双极晶体管 电视 输出元件 局域网
文件: 总5页 (文件大小:198K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC5857  
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE  
2SC5857  
HORIZONTAL DEFLECTION OUTPUT FOR  
HDTV, DIGITAL TV, PROJECTION TV  
Unit: mm  
High Voltage  
: V  
CBO  
= 1700 V  
= 1.5 V (max)  
Low Saturation Voltage : V  
CE (sat)  
: t = 0.1 µs (typ.)  
f(2)  
High Speed  
MAXIMUM RATINGS  
(Tc = 25°C)  
CHARACTERISTIC  
SYMBOL  
RATING  
UNIT  
CollectorBase Voltage  
CollectorEmitter Voltage  
EmitterBase Voltage  
V
CBO  
V
CEO  
V
EBO  
1700  
750  
5
V
V
V
DC  
Pulse  
I
21  
C
Collector Current  
A
I
42  
CP  
Base Current  
I
10.5  
75  
A
B
Collector Power Dissipation  
Junction Temperature  
P
W
°C  
°C  
C
JEDEC  
JEITA  
T
150  
55~150  
j
Storage Temperature Range  
T
stg  
TOSHIBA  
2-16E3A  
Weight: 5.5 g (typ.)  
ELECTRICAL CHARACTERISTICS (Tc = 25°C)  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
= 1700 V, I = 0  
Min  
Typ.  
Max  
UNIT  
Collector Cutoff Current  
I
I
V
V
750  
30  
11  
5
1
100  
mA  
µA  
V
CBO  
CB  
E
Emitter Cutoff Current  
= 5 V, I = 0  
C
EBO  
EB  
Collector Emitter Breakdown Voltage  
V
I
C
= 10 mA, I = 0  
(BR) CEO  
B
h
h
h
V
CE  
V
CE  
V
CE  
= 5 V, I = 2 A  
60  
19  
7.5  
1.5  
1.5  
FE (1)  
FE (2)  
FE (3)  
C
DC Current Gain  
= 5 V, I = 8 A  
C
= 5 V, I = 17 A  
C
CollectorEmitter Saturation Voltage  
BaseEmitter Saturation Voltage  
Transition Frequency  
V
I
C
I
C
= 17 A, I = 4.25 A  
V
V
CE (sat)  
BE (sat)  
B
V
= 17 A, I = 4.25 A  
1.0  
2
B
f
V
= 10 V, I = 0.1 A  
MHz  
pF  
T
CE  
CB  
C
Collector Output Capacitance  
Storage Time  
C
ob  
V
= 10 V, I = 0, f = 1 MHz  
280  
4.5  
E
t
t
stg(1)  
I
f
= 9 A , I (end) = 1.4 A  
B1  
= 32 kHz  
CP  
H
µs  
µs  
Fall Time  
t
0.1  
f(1)  
Switching Time  
Storage Time  
Fall Time  
3.5  
0.1  
stg(2)  
I
f
= 8 A, I (end) = 1.2 A  
B1  
= 45 kHz  
CP  
H
t
f(2)  
1
2004-5-18  
2SC5857  
I
– V  
CE  
C
20  
16  
12  
8
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.2  
1.0  
0.8  
0.6  
0.4  
I
B
= 0.2 A  
4
Common emitter  
Tc = 25  
0
0
2
4
6
8
10  
Collector-emitter voltage  
V
(V)  
CE  
h
FE  
– I  
C
100  
10  
1
Common emitter  
Tc = 100°C  
25  
V
CE  
= 5 V  
25  
0.01  
0.1  
1
10  
100  
Collector current  
I
C
(A)  
I
– V  
BE  
C
20  
Common emitter  
= 5 V  
V
CE  
16  
12  
8
Tc = 100°C  
25  
25  
4
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Baseemitter voltage  
V
(V)  
BE  
2
2004-5-18  
2SC5857  
V
CE  
– I  
V
– I  
B
CE(sat) C  
10  
8
10  
Common emitter  
Tc = 25℃  
Common emitter  
Tc = 25℃  
6
1
I
C
/I = 4  
B
6
10  
I
c
= 17 A  
4
16  
8
0.1  
15  
10  
14  
13  
2
9
12  
8
11  
7
0.01  
0
0
2.4  
B
3.2  
4.0  
4.0  
4.0  
1
0.8  
0.8  
0.8  
1.6  
Base current  
10  
Collector current  
100  
I
(A)  
I
(A)  
C
V
CE  
– I  
V
– I  
B
CE (sat) C  
10  
10  
Common emitter  
Tc = 25℃  
Common emitter  
Tc = 25℃  
6
8
6
4
1
I
C
/I = 4  
B
I
= 17 A  
c
10  
16  
15  
8
10  
14  
0.1  
13  
9
12  
2
0
8
11  
7
0.01  
0
2.4  
3.2  
1.6  
Base current  
1
10  
Collector current  
100  
I
B
(A)  
I
C
(A)  
V
– I  
C
CE (sat)  
V
CE  
– I  
B
10  
8
10  
Common emitter  
Common emitter  
Tc = 100℃  
Tc = 100℃  
6
1
I
C
/I = 4  
B
6
I
c
= 17 A  
10  
16  
8
4
2
0
15  
10  
0.1  
14  
9
13  
12  
8
11  
7
0.01  
1
10  
Collector current  
100  
0
1.6  
Base current  
2.4  
3.2  
I
C
(A)  
I
C
(A)  
3
2004-5-18  
2SC5857  
r
– t  
w
th(j-c)  
10  
1
0.1  
0.01  
Tc = 25(Infinite heat sink)  
Curves should be applied in thermal  
limited area. (single nonrepetitive pulse)  
0.001  
10μ  
10m  
Pulse width  
100μ  
1m  
100m  
1
10  
100  
1000  
t
(s)  
w
Reverse Bias – Safe Operating Area  
Safe Operating Area  
100  
100  
10  
I
C
max (Pulse)  
500V,42A  
10 µs*  
1 ms*  
100 µs*  
I
max (Pulse)*  
C
I
C
max (Continuous)*  
10  
10 ms*  
1
100 ms*  
DC operation  
Tc = 25°C  
1
0.1  
1700V,30mA  
0.1  
*:Single nonrepetitive pulse  
Tc = 25°C  
0.01  
Ta = 25℃  
Curves must be derated  
linearly with increase in  
temperature.  
Non repeated pulse  
V
CEO  
max  
I 2 = 3A  
B
V
CBO  
max  
L = 500 μH  
0.01  
0.001  
1
10  
100  
1000  
10  
100  
1000  
10000  
Collector-emitter voltage VCE (V)  
Collector-emitter voltage VCE (V)  
P
C
Tc  
100  
80  
Infinite heat sink  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
Case temperature Tc (°C)  
4
2004-5-18  
2SC5857  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
5
2004-5-18  

相关型号:

TOSHIBA

2SC5859

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
TOSHIBA

2SC5863

Silicon NPN epitaxial planar type
PANASONIC

2SC5863Q

Small Signal Bipolar Transistor, 0.07A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN
PANASONIC

2SC5863R

Small Signal Bipolar Transistor, 0.07A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN
PANASONIC

2SC5865

Transistors High voltage discharge, High speed switching, Low Noise (60V, 1A)
ROHM

2SC5865TL

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN
ROHM

2SC5865TLQ

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN
ROHM