2SC5862C [ETC]
BJT ; BJT\n
ETC 
2SC5862
Silicon NPN Epitaxial
ADE-208-1482 (Z)
Rev.0
Feb. 2002
Features
•
Low frequency amplifier
Outline
SMPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC5862
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
50
40
V
5
V
100
mA
mA
mW
°C
°C
Emitter current
IE
–100
Collector power dissipation
Junction temperature
Storage temperature
PC*
130
Tj
150
Tstg
–55 to +150
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
50
40
5
V
V
V
IC = 10 µA, IE = 0
Collector to emitter breakdown
voltage
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
ICBO
0.5
0.5
500
0.2
µA
µA
V
V
CB = 30 V, IE = 0
EB = 2 V, IC = 0
IEBO
hFE*1
V
100
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
Collector to emitter saturation
voltage
VCE(sat)
Base to emitter voltage
VBE
0.75
V
VCE = 12 V, IC = 2 mA
Notes: 1. The 2SC5862 is grouped by hFE as follows.
Grade
Mark
hFE
B
C
D
LB
LC
LD
100 to 200
160 to 320
250 to 500
Rev.0, Feb. 2002, page 2 of 6
2SC5862
Maximum Collector Dissipation Curve
Typical Output Characteristics
150
10
8
50
40
30
100
50
6
4
20
2
10 µA
* Value on the glass epoxy board
(10 mm x 10 mm x 0.7 mm)
Pulse test
10
Collector to Emitter Voltage
I
= 0
B
0
5
15
20
V
25
(V)
0
50
100
150
Ambient Temperature Ta (°C)
CE
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
300
200
5
4
3
2
1
V
= 12 V
V
= 12 V
CE
CE
Pulse test
100
0
0
0.2
0.4
0.6
0.8
BE
1.0
0.03 0.1 0.3
1.0
3
10
(mA)
30
Base to Emitter Voltage
V
(V)
Collector Current
I
C
Rev.0, Feb. 2002, page 3 of 6
2SC5862
Collector Output Capacitance vs.
Collector to Base Voltage
Base to Emitter Voltage vs.
Ambient Temperature
5
4
3
2
1
0.9
0.8
V = 12
CE
I = 2 mA
I
= 0
E
f = 1 MHz
C
0.7
0.6
0.5
0.4
0
4
8
12
16
20
(V)
–20
0
20
40
60
80
Collector to Base Voltage
V
CB
Ambient Temperature Ta (°C)
Emitter Input Capacitance vs.
Emitter to Base Voltage
5
4
3
2
1
I
C
= 0
f = 1 MHz
0
2
4
6
8
10
Emitter to Base Voltage
V
EB
(V)
Rev.0, Feb. 2002, page 4 of 6
2SC5862
Package Dimensions
As of July, 2001
Unit: mm
1.6 0.2
+0.1
–0.05
+0.1
–0.05
0.3
0.15
0 − 0.1
+0.1
–0.05
+0.1
0.2
0.2
–0.05
0.5 0.5
1.0 0.1
Hitachi Code
JEDEC
JEITA
SMPAK
Conforms
0.003 g
Mass (reference value)
Rev.0, Feb. 2002, page 5 of 6
2SC5862
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, Feb. 2002, page 6 of 6
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