2SC5855 [TOSHIBA]
HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION; 水平偏转输出超高分辨率
| 型号： | 2SC5855 |
| 厂家： | 
TOSHIBA |
| 描述： | HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION |
| 文件： | 总5页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5855
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5855
HORIZONTAL DEFLECTION OUTPUT FOR
SUPER HIGH RESOLUTION
Unit: mm
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
ꢀ
ꢀ
ꢀ
High Voltage
: V
CBO
= 1500 V
= 3 V (max)
Low Saturation Voltage : V
CE (sat)
: t = 0.1 µs (typ.)
f(2)
High Speed
MAXIMUM RATINGS
(Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
V
V
V
1500
V
V
V
CBO
CEO
EBO
700
5
10
DC
Pulse
I
C
Collector Current
A
JEDEC
JEITA
―
―
I
20
CP
Base Current
I
B
5
A
Collector Power Dissipation
Junction Temperature
P
50
W
°C
°C
C
TOSHIBA
2-16E3A
T
150
−55~150
j
Weight: 5.5 g (typ.)
Storage Temperature Range
T
stg
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
= 1500 V, I = 0
Min
Typ.
Max
UNIT
Collector Cut−off Current
I
I
V
V
―
―
―
―
1
100
―
mA
µA
V
CBO
CB
E
Emitter Cut−off Current
= 5 V, I = 0
C
EBO
EB
Collector − Emitter Breakdown Voltage
V
I
C
= 10 mA, I = 0
700
28
6.2
4.3
―
―
(BR) CEO
B
h
h
h
V
CE
V
CE
V
CE
= 5 V, I = 1 A
―
60
10
6.7
3
FE (1)
FE (2)
FE (3)
C
DC Current Gain
―
= 5 V, I = 6 A
―
C
= 5 V, I = 8 A
―
C
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Transition Frequency
V
I
C
I
C
= 8 A, I = 2 A
―
V
V
CE (sat)
BE (sat)
B
V
= 8 A, I = 2 A
―
1.0
2
1.4
―
B
f
V
= 10 V, I = 0.1 A
―
MHz
pF
T
CE
CB
C
Collector Output Capacitance
Storage Time
C
ob
V
= 10 V, I = 0, f = 1 MHz
―
120
2.8
―
E
t
t
―
―
stg(1)
I
f
= 6 , I (end) = 0.8 A
B1
= 32 kHz
CP
H
µs
µs
Fall Time
t
―
0.2
―
f(1)
Switching Time
Storage Time
Fall Time
―
―
2.3
0.1
―
―
stg(2)
I
f
= 5.5 A, I (end) = 0.8 A
B1
= 80 kHz
CP
H
t
f(2)
1
2004-5-18
2SC5855
I
– V
C
CE
10
8
2.5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
6
0.4
I
B
= 0.2 A
4
2
Common emitter
Tc = 25℃
0
0
2
4
6
8
10
Collector-emitter voltage
V
(V)
CE
h
FE
– I
C
100
10
1
Tc = 100°C
25
−25
Common emitter
= 5 V
V
CE
0.01
0.1
Collector current
1
(A)
10
I
C
I
– V
BE
C
10
Common emitter
= 5 V
V
CE
8
6
Tc = 100°C
−25
4
2
0
25
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage
V
BE
(V)
2
2004-5-18
2SC5855
V
– I
V
– I
C
CE
B
CE(sat)
10
8
Common emitter
Common emitter
10
6
10
Tc = −25℃
Tc = 25℃
−
I
C
/I = 4
B
1
I
c
= 8 A
6
7
6
5
8
4
0.1
2
0.01
0
0
1.2
1.6
2.0
2.4
0.4
0.8
1
10
Collector current
100
100
100
Base current
I
(A)
B
I
(A)
C
V
CE
– I
V
– I
C
B
CE (sat)
10
10
Common emitter
Common emitter
10
6
Tc = 25℃
Tc = 25℃
8
6
4
I
C
/I = 4
B
1
I
c
= 8 A
5
6
7
8
0.1
2
0
0.01
0
1.2
Base current
1.6
(A)
2.0
2.4
0.4
0.8
1
10
Collector current
I
B
I
C
(A)
V
CE
– I
V
– I
C
B
CE (sat)
10
10
8
Common emitter
Common emitter
10
6
Tc = 100℃
Tc = 100℃
I
C
/I = 4
B
1
6
I
c
= 8 A
5
7
6
8
4
2
0
0.1
0.01
0
0.4
0.8
1.2
1.6
(A)
2.0
2.4
1
10
Collector current
I
(A)
Base current
I
C
C
3
2004-5-18
2SC5855
r
– t
w
th(j-c)
10
1
0.1
0.01
Tc = 25℃ (Infinite heat sink)
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
0.001
10μ
10m
Pulse width
100μ
1m
100m
1
10
100
1000
t
(s)
w
Safe Operating Area
Reverse Bias – Safe Operating Area
100
100
10
I
C
max (Pulse)
290V,20A
I
max (Pulse)*
1 ms* 100 µs*
10 µs*
C
I
max (Continuous)
C
10
1
DC operation
Tc = 25°C
10 ms*
1
100 ms*
0.1
0.1
*:Single nonrepetitive pulse
Tc = 25°C
0.01
Ta = 25℃
Curves must be derated
linearly with increase in
temperature.
Non repeated pulse
V
CEO
max
I 2 = −2A
B
L = 500 μH
1500V,2mA
1000
V
CBO
max
0.01
0.001
10
1
10
100
1000
100
10000
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
P
C
– Tc
100
80
Infinite heat sink
60
40
20
0
75
0
25
50
100
125
150
Case temperature Tc (°C)
4
2004-5-18
2SC5855
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
5
2004-5-18
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