2SC5852B [ETC]

BJT ; BJT\n
2SC5852B
型号: 2SC5852B
厂家: ETC    ETC
描述:

BJT
BJT\n

文件: 总6页 (文件大小:69K)
中文:  中文翻译
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2SC5852  
Silicon NPN Epitaxial Planar  
ADE-208-1481 (Z)  
Rev.0  
Feb. 2002  
Features  
VHF amplifier, local oscillator  
Outline  
CMPAK  
3
1
1. Emitter  
2. Base  
2
3. Collector  
2SC5852  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
30  
20  
V
4
V
20  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC*  
150  
Tj  
150  
Tstg  
–55 to +150  
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit Test conditions  
Collector to base breakdown  
voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
30  
20  
4
V
V
V
IC = 10 µA, IE = 0  
IC = 1 mA, RBE = ∞  
IE = 10 µA, IC = 0  
Collector to emitter breakdown  
voltage  
Emitter to base breakdown  
voltage  
Collector cutoff current  
Emitter cutoff current  
DC current transfer ratio  
ICEO  
60  
0.5  
0.5  
200  
µA  
µA  
V
V
CE = 10 V, RBE = ∞  
IEBO  
hFE*1  
VEB = 2 V, IC =0  
VCE = 6 V, IC = 1 mA  
IC = 20 mA, IB = 4 mA  
Collector to emitter saturation  
voltage  
VCE(sat)  
0.17  
Base to emitter voltage  
Gain bandwidth product  
Collector output capacitance  
VBE  
fT  
0.72  
940  
0.9  
V
V
V
V
CE = 6 V, IC = 1 mA  
MHz  
pF  
CE = 6V, IC = 5 mA  
Cob  
CB = 10 V, IE = 0, f = 1 MHz  
Notes: 1. The 2SC5852 is grouped by hFE as follows.  
Grade  
Mark  
hFE  
B
C
QB  
QC  
60 to 120  
100 to 200  
Rev.0 Feb. 2002 page 2 of 6  
2SC5852  
Maximum Collector Dissipation Curve  
Typical Output Characteristics  
150  
100  
50  
20  
16  
12  
8
275  
250  
225  
200  
175  
150  
125  
50  
4
25 µA  
* Value on the glass epoxy board  
(10 mm x 10 mm x 0.7 mm)  
I
= 0  
B
0
50  
100  
150  
0
4
8
12  
16  
CE  
20  
(V)  
Collector to Emitter Voltage V  
Ambient Temperature Ta (°C)  
DC Current Transfer Ratio vs.  
Collector Current  
Typical Output Characteristics  
5
4
3
2
1
120  
100  
80  
V
= 6 V  
CE  
Pulse test  
60  
20  
40  
10 µA  
20  
0
I = 0  
B
0
4
8
12  
16  
20  
(V)  
0.1 0.2 0.5 1.0  
2
5
10 20  
Collector to Emitter Voltage  
V
CE  
Collector Current  
I
C
(mA)  
Rev.0 Feb. 2002 page 3 of 6  
2SC5852  
Typical Transfer Characteristics (1)  
Typical Transfer Characteristics (2)  
= 6 V  
20  
16  
12  
5
4
3
2
V
= 6 V  
V
CE  
CE  
Pulse test  
8
4
0
1
0
0.6  
0.7  
Base to Emitter Voltage V  
0.8  
0.6  
0.7  
Base to Emitter Voltage  
0.8  
(V)  
V
BE  
(V)  
BE  
Collector Output Capacitance vs.  
Collector to Base Voltage  
Gain Bandwidth Product vs.  
Collector Current  
1,000  
800  
1.5  
1.3  
1.1  
0.9  
f = 1 MHz  
V
= 6 V  
CE  
I
= 0  
E
600  
400  
200  
0
0.7  
0.5  
0.1 0.2 0.5 1.0  
2
5
10  
20  
0.3  
1.0  
3
10  
CB  
30  
Collector to Base Voltage V  
(V)  
Collector Current  
I
C
(mA)  
Rev.0 Feb. 2002 page 4 of 6  
2SC5852  
Package Dimensions  
As of July, 2001  
Unit: mm  
2.0 0.2  
+ 0.1  
+ 0.1  
0.16  
0.3  
0.3  
– 0.06  
– 0.05  
0 – 0.1  
+ 0.1  
– 0.05  
+ 0.1  
– 0.05  
0.3  
0.65  
0.65  
1.3 0.2  
Hitachi Code  
JEDEC  
CMPAK  
JEITA  
Mass (reference value)  
Conforms  
0.006 g  
Rev.0 Feb. 2002 page 5 of 6  
2SC5852  
Disclaimer  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Sales Offices  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: (03) 3270-2111 Fax: (03) 3270-5109  
URL  
http://www.hitachisemiconductor.com/  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe Ltd.  
Hitachi Asia Ltd.  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower  
Electronic Components Group  
Hitachi Tower  
179 East Tasman Drive Whitebrook Park  
16 Collyer Quay #20-00  
Singapore 049318  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://semiconductor.hitachi.com.sg  
San Jose,CA 95134  
Lower Cookham Road  
World Finance Centre,  
Tel: <1> (408) 433-1990 Maidenhead  
Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://semiconductor.hitachi.com.hk  
Fax: <44> (1628) 585200  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road  
Hung-Kuo Building  
Taipei (105), Taiwan  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Hitachi Europe GmbH  
Electronic Components Group  
Dornacher Straße 3  
D-85622 Feldkirchen  
Postfach 201, D-85619 Feldkirchen  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.  
Colophon 5.0  
Rev.0 Feb. 2002 page 6 of 6  

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