EK42510-01 [PSEMI]
SPDT High Power UltraCMOS RF Switch 30 - 2000 MHz; SPDT大功率的UltraCMOS RF开关30 - 2000兆赫
| 型号： | EK42510-01 |
| 厂家： | 
Peregrine Semiconductor |
| 描述： | SPDT High Power UltraCMOS RF Switch 30 - 2000 MHz |
| 文件： | 总7页 (文件大小：376K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
PE42510A
SPDT High Power UltraCMOS™
RF Switch 30 - 2000 MHz
Product Description
Features
The following specification defines an SPDT (single pole
double throw) switch for use in cellular and other wireless
applications. The PE42510A uses Peregrine’s UltraCMOS™
process and it also features HaRP™ technology
enhancements to deliver high linearity and exceptional
harmonics performance. HaRP™ technology is an innovative
feature of the UltraCMOS™ process providing upgraded
linearity performance.
•
•
•
No blocking capacitors required
50 Watt P1dB compression point
10 Watts <8:1 VSWR (Normal
Operation)
•
•
•
•
•
29 dB Isolation @800 MHz
< 0.3 dB Insertion Loss at 800 MHz
2fo and 3fo < -84 dBc @ 42.5 dBm
ESD rugged to 2.0 kV HBM
The PE42510A is manufactured on Peregrine’s UltraCMOS™
process, a patented variation of silicon-on-insulator (SOI)
technology on a sapphire substrate, offering the performance
of GaAs with the economy and integration of conventional
CMOS.
32-lead 5x5 mm QFN package
Figure 1. Functional Diagram
Figure 2. Package Type
32-lead 5x5 mm QFN
RFC
RF1
RF2
CMOS
Control Driver
and ESD
CTRL
Table 1. Electrical Specifications @ 25 °C, VDD = 3.3 V (ZS = ZL = 50 Ω) unless otherwise noted
Parameter
Conditions
Min
Typ
Max
Units
30 MHz ≤ 1 GHz
1 GHz < 2 GHz
0.4
0.5
0.6
0.7
dB
dB
RF Insertion Loss
0.1 dB Input Compression Point
800 MHz, 50% duty cycle
800 MHz
45.4
29
dBm
dB
Isolation (Supply Biased): RF to RFC
25
5
Unbiased Isolation: RF - RFC, VDD, V1=0 V
RF (Active Port) Return Loss
27 dBm, 800 MHz
dB
dB
15
22
2nd Harmonic
3rd Harmonic
800 MHz @ +42.5 dBm
-84
-81
0.5
dBc
Switching Time
50% of CTRL to 10/90% of RF
No RF applied
0.04
ms
Lifetime switch cycles
10^10
cycles
Note: The device was matched with 1.6 nH inductance per RF port
Document No. 70-0266-01 │ www.psemi.com
©2008 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 7
PE42510A
Product Specification
Figure 3. Pin Configuration (Top View)
Table 3. Operating Ranges
Parameter
Min
Typ
Max
2000
40
Units
MHz
Frequency Range
RF Input Power1 (VSWR ≤ 8:1)
30
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
GND
GND
dBm
RF Input Power2 (VSWR ≤ 8:1)
VDD Power Supply Voltage
IDD Power Supply Current
Control Voltage High
27
3.4
170
dBm
V
RF1
GND
GND
RF2
3.2
1.4
3.3
90
GND
GND
uA
V
Exposed
Ground
Paddle
GND
GND
GND
GND
Control Voltage Low
0.4
85
V
GND
GND
Operating temperature range
(Case)
Tj Operating junction
temperature
-40
°C
°C
140
GND
GND
Notes: 1. Supply biased
2. Supply unbiased
Table 4. Absolute Maximum Ratings
Table 2. Pin Descriptions
Symbol
VDD
Parameter/Conditions
Min Max Units
Pin No.
1
Pin Name
GND
RF1
Description
Power supply voltage
-0.3
-0.3
-65
4
V
V
Ground
RF1 port
Ground
Ground
Ground
Ground
Ground
Ground
Ground
Ground
No Connect
VDD
+
Voltage on any DC input
VI
2
0.3
150
85
3
GND
GND
GND
GND
GND
GND
GND
GND
N/C
Storage temperature range
Maximum case temperature
°C
°C
TST
4
TCASE
5
Peak maximum junction
temperature (10 seconds max)
200
°C
Tj
6
RF Input power
(VSWR 20:1, 10 seconds)
7
40
45
27
dBm
dBm
dBm
8
PIN
RF Input Power (50Ω)
9
RF Input Power, unbiased
(VSWR 20:1)
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
paddle
Maximum Power Dissipation due to
RF Insertion Loss
2.2
W
V
PD
VDD
Nominal 3.3 V supply connection
CTRL
GND
GND
N/C
Control
ESD Voltage (HBM, MIL_STD 883
Method 3015.7)
2000
VESD
Ground
Ground
Absolute Maximum Ratings
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be restricted to the
limits in the Operating Ranges table. Operation between
operating range maximum and absolute maximum for
extended periods may reduce reliability.
Do Not Connect
Ground
GND
GND
GND
GND
GND
GND
RF2
Ground
Ground
Ground
Ground
Ground
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS™ device, observe the
same precautions that you would use with other ESD-
sensitive devices. Although this device contains circuitry
to protect it from damage due to ESD, precautions should
be taken to avoid exceeding the rating specified.
RF2 port.
Ground
GND
GND
GND
GND
RFC
GND
GND
GND
GND
GND
Ground
Ground
Ground
Common RF port for switch
Ground
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
Ground
Ground
Ground
Exposed ground paddle
Table 5. Control Logic Truth Table
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the 5x5 QFN
package is MSL3.
Path
RFC – RF1
RFC – RF2
CTRL
H
L
©2008 Peregrine Semiconductor Corp. All rights reserved.
Document No. 70-0266-01 │ UltraCMOS™ RFIC Solutions
Page 2 of 7
PE42510A
Product Specification
Figure 4. Evaluation Board Layouts
Peregrine Specification 101/0314
Evaluation Kit
The PE42510A Evaluation Kit board was designed
to ease customer evaluation of the PE42510A RF
switch.
DC power is supplied through J10, with VDD on pin 9,
and GND on the entire lower row of even numbered
pins. To evaluate a switch path, add or remove
jumpers on CTRL/V1 (pin 3) using Table 5 (adding a
jumper pulls the CMOS control pin low and removing
it allows the on-board pull-up resistor to set the
CMOS control pin high). J10 pins 1, 11, and 13 are
N/C.
The RF common port (RFC) is connected through a
50 Ohm transmission line via the top SMA
connector, J1. RF1 and RF2 paths are also
connected through 50 Ohm transmission lines via
SMA connectors. A 50 Ohm through transmission
line is available via SMA connectors J8 and J9. This
transmission line can be used to estimate the loss of
the PCB over the environmental conditions being
evaluated. An open-ended 50 Ohm transmission
line is also provided at J7 for calibration if needed.
Figure 5. Evaluation Board Schematic
Peregrine Specification 102/0383
J1
SMA
2
J2
J3
SMA
SMA
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
NC
RF1
NC
NC
NC
GND
NC
NC
NC
RF2
NC
1
1
U1
NC
QFN5X5-32LD
PE42510
NC
NC
GND
NC
R1
1M
J10
HEADER14
1
3
2
1
2
4
4
3
5
6
5
6
J7
7
8
7
8
Z1
SM A-DNI
9
10
12
14
9
10
12
14
Open Line
1
1
1
11
13
11
13
J8
SM A-DNI
J9
SM A-DNI
Through Line
C2
DNI
C3
C4
C7
100pF
C8
1
DNI
0.01u
0.01u
Document No. 70-0266-01 │ www.psemi.com
©2008 Peregrine Semiconductor Corp. All rights reserved.
Page 3 of 7
PE42510A
Product Specification
Figure 9. RFC-RF Isolation, +25 °C
Figure 6. RF-RFC Insertion Loss, VDD = 3.3V
Figure 7. RF-RFC Insertion Loss, +25 °C
Figure 8. RFC-RF Isolation, VDD = 3.3V
Figure 10. RF Return Loss, VDD = 3.3V
Figure 11. RF Return Loss, +25 °C
©2008 Peregrine Semiconductor Corp. All rights reserved.
Document No. 70-0266-01 │ UltraCMOS™ RFIC Solutions
Page 4 of 7
PE42510A
Product Specification
Thermal Data
Though the insertion loss for this part is very low,
when handling high power RF signals, the part can get
quite hot.
Figure 12. Power Dissipation
2.5
1:1 VSWR (50 Ohm Load)
2:1 VSWR (25 Ohm Load)
Figure 12 shows the estimated power dissipation for a
given incident RF power level. Multiple curves are
presented to show the effect of poor VSWR
conditions. VSWR conditions that present short circuit
loads to the part can cause significantly more power
dissipation than with proper matching.
2.0
8:1 VSWR (6.25 Ohm Load)
20:1 VSWR (2.5 Ohm Load)
INF:1 VSWR (0 Ohm Load)
1.5
Rel i abi l i ty Li mi t
1.0
0.5
0.0
Figure 13 shows the estimated maximum junction
temperature of the part for similar conditions.
Note that both of these charts assume that the case
(GND slug) temperature is held at 85C. Special
consideration needs to be made in the design of the
PCB to properly dissipate the heat away from the part
and maintain the 85C maximum case temperature. It
is recommended to use best design practices for high
power QFN packages: multi-layer PCBs with thermal
vias in a thermal pad soldered to the slug of the
package. Special care also needs to be made to
alleviate solder voiding under the part.
30
31 32
33
34 35
36
37
38 39
40
41 42
43
44 45
46
RF Pow e r (dBm )
Figure 13. Maximum Junction Temperature
14 5
14 0
13 5
1:1 VSWR (50 Ohm Load)
2:1 VSWR (25 Ohm Load)
13 0
8:1 VSWR (6.25 OhmLoad)
12 5
20:1 VSWR (2.5 OhmLoad)
Table 6. Theta JC
INF:1 VSWR (0 OhmLoad)
12 0
Rel i abi l i ty Li mi t
Parameter
Min
Typ
Max
Units
115
110
10 5
10 0
95
Theta JC (+85°C)
24.0
C/W
90
85
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
RF Power (dBm)
Note: Case temperature = 85°C
Document No. 70-0266-01 │ www.psemi.com
©2008 Peregrine Semiconductor Corp. All rights reserved.
Page 5 of 7
PE42510A
Product Specification
Figure 14. Package Drawing
See Note
below
Note: Not for electrical connection.
Corner detail is tied to paddle and
should not be isolated on PCB board.
Figure 15. Tape and Reel Specs
Table 7. Ordering Information
Order Code
PE42510AMLI
PE42510AMLI-Z
EK42510-01
Part Marking
42510
Description
Parts in Tubes or Cut Tape
Parts on Tape and Reel
Evaluation Kit
Package
Shipping Method
73 units / Tube
3000 units / T&R
1 / Box
Green 32-lead 5x5mm QFN
Green 32-lead 5x5mm QFN
Evaluation Kit
42510
42510
©2008 Peregrine Semiconductor Corp. All rights reserved.
Document No. 70-0266-01 │ UltraCMOS™ RFIC Solutions
Page 6 of 7
PE42510A
Product Specification
Sales Offices
The Americas
Peregrine Semiconductor Corporation
Peregrine Semiconductor, Asia Pacific (APAC)
Shanghai, 200040, P.R. China
Tel: +86-21-5836-8276
Fax: +86-21-5836-7652
9380 Carroll Park Drive
San Diego, CA 92121
Tel: 858-731-9400
Fax: 858-731-9499
Peregrine Semiconductor, Korea
#B-2607, Kolon Tripolis, 210
Geumgok-dong, Bundang-gu, Seongnam-si
Gyeonggi-do, 463-943 South Korea
Tel: +82-31-728-3939
Europe
Peregrine Semiconductor Europe
Bâtiment Maine
Fax: +82-31-728-3940
13-15 rue des Quatre Vents
F-92380 Garches, France
Tel: +33-1-4741-9173
Fax : +33-1-4741-9173
Peregrine Semiconductor K.K., Japan
Teikoku Hotel Tower 10B-6
1-1-1 Uchisaiwai-cho, Chiyoda-ku
Tokyo 100-0011 Japan
Tel: +81-3-3502-5211
Fax: +81-3-3502-5213
Space and Defense Products
Americas:
Tel: 858-731-9453
Europe, Asia Pacific:
180 Rue Jean de Guiramand
13852 Aix-En-Provence Cedex 3, France
Tel: +33-4-4239-3361
Fax: +33-4-4239-7227
For a list of representatives in your area, please refer to our Web site at: www.psemi.com
Data Sheet Identification
Advance Information
The information in this data sheet is believed to be reliable.
However, Peregrine assumes no liability for the use of this
information. Use shall be entirely at the user’s own risk.
The product is in a formative or design stage. The data
sheet contains design target specifications for product
development. Specifications and features may change in
any manner without notice.
No patent rights or licenses to any circuits described in this
data sheet are implied or granted to any third party.
Preliminary Specification
Peregrine’s products are not designed or intended for use in
devices or systems intended for surgical implant, or in other
applications intended to support or sustain life, or in any
application in which the failure of the Peregrine product could
create a situation in which personal injury or death might occur.
Peregrine assumes no liability for damages, including
consequential or incidental damages, arising out of the use of
its products in such applications.
The data sheet contains preliminary data. Additional data
may be added at a later date. Peregrine reserves the right
to change specifications at any time without notice in order
to supply the best possible product.
Product Specification
The data sheet contains final data. In the event Peregrine
decides to change the specifications, Peregrine will notify
customers of the intended changes by issuing a DCN
(Document Change Notice).
The Peregrine name, logo, and UTSi are registered trademarks
and UltraCMOS, HaRP and MultiSwitch are trademarks of
Peregrine Semiconductor Corp.
Document No. 70-0266-01 │ www.psemi.com
©2008 Peregrine Semiconductor Corp. All rights reserved.
Page 7 of 7
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PSEMI
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