2SD2255P [PANASONIC]
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| 型号： | 2SD2255P |
| 厂家： | 
PANASONIC |
| 描述： | 暂无描述 |
| 文件： | 总3页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2255
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
Complementary to 2SB1493
15.0±0.5
13.0±0.5
10.5±0.5
4.5±0.2
2.0±0.1
Features
■
●
Optimum for 60W HiFi output
●
High foward current transfer ratio hFE: 5000 to 30000
●
Low collector to emitter saturation voltage VCE(sat): <2.5V
φ3.2±0.1
2.0±0.2
1.4±0.3
0.6±0.2
Absolute Maximum Ratings (T =25˚C)
1.1±0.1
■
C
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
5.45±0.3
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
160
10.9±0.5
140
V
1:Base
2:Collector
3:Emitter
1
2
3
5
V
12
A
EIAJ:SC–65(a)
TOP–3 Package(a)
IC
7
70
A
Collector power TC=25°C
Internal Connection
PC
W
dissipation
Ta=25°C
2.5
C
Junction temperature
Storage temperature
Tj
150
˚C
˚C
B
Tstg
–55 to +150
E
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
100
100
Unit
µA
µA
µA
V
VCB = 160V, IE = 0
Collector cutoff current
ICEO
IEBO
VCEO
hFE1
VCE = 140V, IB = 0
VEB = 5V, IC = 0
Emitter cutoff current
Collector to emitter voltage
I
C = 30mA, IB = 0
140
2000
5000
VCE = 5V, IC = 1A
Forward current transfer ratio
*
hFE2
VCE = 5V, IC = 6A
30000
2.5
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 6A, IB = 6mA
V
V
IC = 6A, IB = 6mA
3.0
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 1MHz
20
2.5
5.0
2.5
MHz
µs
IC = 6A, IB1 = 6mA, IB2 = –6mA,
VCC = 50V
µs
µs
*hFE2 Rank classification
Rank
hFE2
Q
P
5000 to 15000 8000 to 30000
1
Power Transistors
2SD2255
PC — Ta
IC — VCE
VBE(sat) — IC
80
12
10
8
100
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2.5W)
IC/IB=1000
TC=25˚C
(1)
70
60
50
40
30
20
10
0
IB=5mA
30
10
1mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
6
3
1
TC=–25˚C
100˚C
0.4mA
4
0.3mA
25˚C
0.2mA
(2)
(3)
2
0.3
0.1
0.1mA
10
0
0
20 40 60 80 100 12 140 160
0
2
4
6
8
12
0.1
0.3
1
3
10
30
100
(
)
(
V
)
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Collector current IC
VCE(sat) — IC
hFE — IC
Cob — VCB
100
100000
1000
IC/IB=1000
VCE=5V
IE=0
f=1MHz
TC=25˚C
30000
30
10
300
100
10000
TC=100˚C
3000
1000
TC=100˚C
25˚C
3
1
30
10
25˚C
–25˚C
300
100
–25˚C
0.3
0.1
3
1
30
10
0.1
0.3
1
3
10
30
100
0.01 0.03
0.1
0.3
1
3
10
1
3
10
30
100
( )
A
(
A
)
( )
Collector to base voltage VCB V
Collector current IC
Collector current IC
ton, tstg, tf — IC
Area of safe operation (ASO)
100
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000 (IB1=–IB2
VCC=50V
Non repetitive pulse
TC=25˚C
30
10
)
30
10
ICP
tstg
TC=25˚C
t=1ms
10ms
DC
IC
ton
tf
3
1
3
1
0.3
0.1
0.3
0.1
0.03
0.01
0.03
0.01
0
4
8
12
16
1
3
10
30
100 300 1000
( )
A
( )
V
Collector current IC
Collector to emitter voltage VCE
2
Power Transistors
2SD2255
Rth(t) — t
1000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
10
1
(1)
(2)
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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