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2SD2256 [ISC]

isc Silicon NPN Darlington Power Transistor; ISC的硅NPN达林顿功率晶体管
2SD2256
型号： 2SD2256
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

isc Silicon NPN Darlington Power Transistor
ISC的硅NPN达林顿功率晶体管

晶体 晶体管
文件： 总2页 (文件大小：76K)
中文：  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
2SD2256  
DESCRIPTION  
·High DC Current Gain  
: hFE= 2000(Min.)@ IC= 12A, VCE= 4V  
·High Collector-Emitter Breakdown Voltage-  
: V(BR)CEO = 120V(Min)  
APPLICATIONS  
·Designed for low frequency power amplifier applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
120  
UNIT  
V
120  
V
7
V
Collector Current-Continuous  
Collector Current-Peak  
25  
A
ICM  
35  
A
Collector Power Dissipation  
@TC=25℃  
PC  
120  
W
℃
℃
Tj  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
2SD2256  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
PARAMETER  
CONDITIONS  
IC= 200mA, RBE= ∞  
IC= 0.1mA, IE= 0  
MIN  
120  
120  
120  
7
TYP.  
MAX  
UNIT  
V
Collector-Emitter Sustaining Voltage  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff current  
V
IC= 25mA, RBE= ∞  
IE= 50mA, IC= 0  
V
V
IC= 12A ,IB= 24mA  
IC= 25A ,IB= 250mA  
IC= 12A ,IB= 24mA  
IC= 25A ,IB= 250mA  
VCB= 100V, IE= 0  
2.0  
3.5  
V
VCE  
VCE  
VBE  
VBE  
(sat)-1  
(sat)-2  
(sat)-1  
(sat)-2  
V
3.0  
V
4.5  
V
ICBO  
10  
μA  
μA  
ICEO  
hFE-1  
hFE-2  
Collector Cutoff current  
VCE= 100V, RBE= ∞  
10  
DC Current Gain  
IC= 12A ; VCE= 4V  
IC= 25A ; VCE= 4V  
2000  
500  
20000  
DC Current Gain  
isc Website：www.iscsemi.cn  

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