2SD2258-HW [PANASONIC]
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,;
| 型号： | 2SD2258-HW |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD2258 (Tentative)
Silicon NPN epitaxial planer type
Unit: mm
2.5±0.1
1.05
±0.05
6.9±0.1
4.0
(1.45)
0.8
0.7
For low-frequency output amplification
0.65 max.
Features
■
●
Darlington connection.
●
High foward current transfer ratio hFE
.
0.45+–00..015
●
Allowing supply with the radial taping.
2.5±0.5 2.5±0.5
1
2
3
Absolute Maximum Ratings (Ta=25˚C)
■
Note: In addition to the
lead type shown in
1:Emitter
2:Collector
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
the upper figure, the 3:Base
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
60
type as shown in
the lower figure is
also available.
MT2 Type Package
50
V
5
V
1.5
A
IC
1
A
1.2±0.1
*
Collector power dissipation
Junction temperature
Storage temperature
PC
1
W
˚C
˚C
0.65
max.
Tj
150
+
0.1
0.45–0.05
(HW type)
Tstg
–55 ~ +150
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Internal Connection
C
E
B
≈200Ω
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
VCB = 45V, IE = 0
min
typ
max
0.1
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
IEBO
VEB = 4V, IC = 0
0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCBO
VCEO
VEBO
IC = 100µA, IE = 0
60
50
IC = 1mA, IB = 0
V
IE = 100µA, IC = 0
5
V
*1
hFE
VCE = 10V, IC = 1A
IC = 1A, IB = 1mA*2
IC = 1A, IB = 1mA*2
VCB = 10V, IE = –50mA, f = 200MHz
4000
40000
1.8
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
V
V
2.2
Transition frequency
fT
150
MHz
*2 Pulse measurement
*1
h
Rank classification
FE
Rank
hFE
Q
R
S
4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
1
Transistor
2SD2258
PC — Ta
VCE(sat) — IC
VBE(sat) — IC
1.2
IC/IB=1000
IC/IB=1000
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
10
10
1.0
0.8
0.6
0.4
0.2
0
25˚C
3
1
3
1
Ta=–25˚C
25˚C
Ta=–25˚C
100˚C
100˚C
0.3
0.1
0.3
0.1
0.03
0.01
0.03
0.01
0
40
80
120
160
200
)
0.01
0.03
0.1
0.3
1
3
0.01
0.03
0.1
0.3
1
3
(
( )
A
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector current IC
hFE — IC
Cob — VCB
24
20
16
12
8
IE=0
f=1MHz
Ta=25˚C
VCE=10V
105
104
103
102
TC=100˚C
25˚C
–25˚C
4
0
0.01
0.03
0.1
0.3
1
3
1
3
10
30
100
(
A
)
( )
Collector to base voltage VCB V
Collector current IC
2
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