2SD2260Q [ETC]
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 70MA I(C) | SC-71 ; 晶体管| BJT | NPN | 400V V（ BR ） CEO | 70MA I（C ） | SC- 71\n
| 型号： | 2SD2260Q |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 70MA I(C) | SC-71
|
| 文件： | 总3页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD2260
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
Unit: mm
6.9±0.1
4.0
2.5±0.1
1.05
±0.05
(1.45)
0.8
0.7
Features
High collector breakdown voltage.
■
●
●
Low collector to emitter saturation voltage VCE(sat)
.
0.65 max.
●
Allowing supply with the radial taping.
0.45+–00..015
2.5±0.5 2.5±0.5
Absolute Maximum Ratings (Ta=25˚C)
■
1
2
3
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
400
400
V
Note: In addition to the
lead type shown in
1:Emitter
2:Collector
5
V
the upper figure, the 3:Base
100
mA
mA
mW
˚C
type as shown in
the lower figure is
also available.
MT1 Type Package
IC
70
Collector power dissipation
Junction temperature
Storage temperature
PC
600
Tj
150
Tstg
–55 ~ +150
˚C
1.2±0.1
0.65
max.
+
0.1
0.45–0.05
(HW type)
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
µA
µA
V
V
CB = 100V, IE = 0
2
2
Collector cutoff current
ICEO
VCE = 100V, IB = 0
Collector to emitter voltage
Emitter to base voltage
VCEO
VEBO
IC = 100µA, IB = 0
400
5
IE = 10µA, IC = 0
V
*
Forward current transfer ratio
hFE
VCE = 10V, IC = 5mA
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
60
220
1.2
Collector to emitter saturation voltage VCE(sat)
0.4
80
4
V
MHz
pF
Transition frequency
fT
50
Collector output capacitance
Cob
10
*hFE Rank classification
Rank
hFE
Q
R
60 ~ 150
100 ~ 220
1
Transistor
2SD2260
PC — Ta
IC — VCE
IC — VBE
800
700
600
500
400
300
200
100
0
120
100
80
60
40
20
0
120
100
80
60
40
20
0
Ta=25˚C
IB=2.0mA
VCE=10V
1.8mA
1.6mA
25˚C
1.4mA
1.2mA
1.0mA
Ta=75˚C
–25˚C
0.8mA
0.6mA
0.4mA
0.2mA
0
40
80
120
160
200
)
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
(
( )
V
(
V
)
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Base to emitter voltage VBE
IC — IB
VCE(sat) — IC
IB — VBE
120
100
80
60
40
20
0
100
3.0
2.5
2.0
1.5
1.0
0.5
0
IC/IB=10
VCE=10V
Ta=25˚C
VCE=10V
Ta=25˚C
30
10
3
1
Ta=75˚C
25˚C
0.3
0.1
–25˚C
0.03
0.01
0
0.4
0.8
1.2
1.6
2.0
0.01 0.03
0.1
0.3
1
3
10
0
0.2
0.4
0.6
0.8
1.0
(
)
(
)
( )
Base to emitter voltage VBE V
Base current IB mA
Collector current IC mA
hFE — IC
fT — IE
ICBO — Ta
360
300
240
180
120
60
160
140
120
100
80
104
103
102
10
VCB=250V
VCB=10V
Ta=25˚C
VCE=10V
Ta=75˚C
25˚C
60
–25˚C
40
20
0
0
–1
1
0.01 0.03
0.1
0.3
1
3
10
–3
–10
–30
–100
0
40
80
120
160
200
(
)
(
)
(
)
Collector current IC mA
Emitter current IE mA
Ambient temperature Ta ˚C
2
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2001 MAR
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