2SD2259 [PANASONIC]
Silicon NPN epitaxial planer type(For low-frequency amplification); NPN硅外延平面型（低频放大）
| 型号： | 2SD2259 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer type(For low-frequency amplification) |
| 文件： | 总2页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD2259
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
2.5±0.1
1.05
±0.05
6.9±0.1
4.0
(1.45)
0.8
0.7
Features
High foward current transfer ratio hFE
■
●
.
●
●
Low collector to emitter saturation voltage VCE(sat)
Allowing supply with the radial taping.
.
0.65 max.
0.45+–00..015
2.5±0.5 2.5±0.5
Absolute Maximum Ratings (Ta=25˚C)
■
1
2
3
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
20
20
V
Note: In addition to the
lead type shown in
1:Emitter
2:Collector
15
V
the upper figure, the 3:Base
1.5
A
type as shown in
the lower figure is
also available.
MT2 Type Package
IC
0.7
1
A
*
Collector power dissipation
Junction temperature
Storage temperature
PC
W
˚C
˚C
Tj
150
Tstg
–55 ~ +150
1.2±0.1
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
0.65
max.
+
0.1
0.45–0.05
(HW type)
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
CB = 15V, IE = 0
min
typ
max
Unit
µA
µA
V
V
1
Collector cutoff current
ICEO
VCBO
VCEO
VEBO
hFE
VCE = 15V, IB = 0
10
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
IC = 10µA, IE = 0
20
20
IC = 1mA, IB = 0
V
IE = 10µA, IC = 0
15
V
Forward current transfer ratio
VCE = 10V, IC = 150mA*
IC = 500mA, IB = 50mA*
VCB = 20V, IE = –20mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
1000
2500
0.4
Collector to emitter saturation voltage VCE(sat)
0.15
55
V
MHz
pF
Transition frequency
fT
Collector output capacitance
Cob
10
15
*2 Pulse measurement
1
Transistor
2SD2259
PC — Ta
IC — VCE
IC — VBE
1.2
200
160
120
80
2.4
2.0
1.6
1.2
0.8
0.4
0
VCE=10V
Ta=25˚C
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
1.0
0.8
0.6
0.4
0.2
0
IB=100µA
90µA
25˚C
Ta=75˚C
80µA
70µA
–25˚C
60µA
50µA
40µA
30µA
40
20µA
10µA
0
0
40
80
120
160
200
)
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
(
(
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
V
VCE(sat) — IC
hFE — IC
fT — IE
100
3000
300
250
200
150
100
50
IC/IB=10
VCE=10V
VCB=10V
Ta=25˚C
30
10
2500
2000
1500
1000
500
Ta=75˚C
25˚C
3
1
–25˚C
Ta=75˚C
25˚C
0.3
0.1
–25˚C
0.03
0.01
0
0
–1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
–3
–10 –30 –100 –300 –1000
( )
A
(
A
)
(
)
Collector current IC
Collector current IC
Emitter current IE mA
Cob — VCB
24
20
16
12
8
IE=0
f=1MHz
Ta=25˚C
4
0
1
3
10
30
100
( )
V
Collector to base voltage VCB
2
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