2SD2257_06 [TOSHIBA]
High-Power Switching Applications; 高功率开关应用
| 型号： | 2SD2257_06 |
| 厂家： | 
TOSHIBA |
| 描述： | High-Power Switching Applications |
| 文件： | 总4页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2257
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SD2257
High-Power Switching Applications
Unit: mm
Hammer Drive, Pulse Motor Drive Applications
•
•
•
High DC current gain: h
= 2000 (min)
FE
Low saturation voltage: V
= 1.5 V (max)
CE (sat)
Complementary to 2SB1495
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
100
V
V
V
Collector-emitter voltage
Emitter-base voltage
100
8
±3
DC
I
C
Collector current
Base current
A
A
Pulse
I
±5
CP
I
0.3
B
JEDEC
JEITA
―
Ta = 25°C
Tc = 25°C
2.0
Collector power
dissipation
P
W
SC-67
2-10R1A
C
20
TOSHIBA
Junction temperature
T
150
°C
°C
j
Weight: 1.7 g (typ.)
Storage temperature range
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 4 kΩ
≈ 800 Ω
Emitter
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2006-11-21
2SD2257
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
= 100 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
V
V
―
0.8
100
2000
2000
―
―
―
―
―
―
―
―
―
10
4.0
―
μA
mA
V
CBO
CB
EB
E
Emitter cut-off current
I
= 8 V, I = 0
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
V
I = 10 mA, I = 0
C B
h
h
V
V
= 2 V, I = 1 A
―
FE (1)
FE (2)
CE
CE
C
DC current gain
= 2 V, I = 2 A
―
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Emitter-collector forward voltage
V
I
I
I
= 1.5 A, I = 1.5 mA
1.5
2.0
2.0
V
V
V
CE (sat)
BE (sat)
C
C
E
B
V
= 1.5 A, I = 1.5 mA
―
B
V
= 1 A, I = 0
B
―
ECF
Turn-on time
t
Output
―
―
―
0.5
2.0
0.5
―
―
―
on
20 μs
I
B1
Input
I
Switching time
B2
μs
Storage time
Fall time
t
stg
V
≈ 30 V
CC
t
f
I
= −I = 1.5 mA, duty cycle ≤ 1%
B2
B1
Marking
D2257
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-21
2SD2257
I
– V
I
– V
BE
C
CE
C
4
3
2
1
0
Common emitter
V = 2 V
CE
3 mA 2 mA 1 mA
700 μA
3
2
1
500 μA
400 μA
300 μA
Tc = 100°C
I
= 200 μA
B
−55
Common emitter
25
Tc = 25°C (pulsed)
0
0
1
2
3
4
5
0
0.8
1.6
2.4
3.2
4.0
Collector-emitter voltage
V
(V)
Base-emitter voltage
V
(V)
CE
BE
h
– I
V
– I
CE (sat) C
FE
C
10000
3
3000
1000
25
Tc = 100°C
Tc = −55°C
1
−55
300
100
100
25
0.5
0.3
Common emitter
Common emitter
I
/I = 1000
C B
V
= 2 V
3
CE
30
0.3
0.5
1
3
5
0.01
0.03
0.1
0.3
1
10
Collector current
I
C
(A)
Collector current
I
C
(A)
Safe Operating Area
V
– I
BE (sat)
C
5
3
10
I
max (pulsed)*
C
Common emitter
I
/I = 1000
C B
1 ms*
5
3
1
100 μs*
10 ms*
0.5
0.3
Tc = −55°C
*: Single nonrepetitive pulse
Tc = 25°C
25
0.1
100
1
Curves must be derated linearly
with increase in temperature.
0.05
0.03
0.5
0.1
0.3
0.5
1
3
5
0.3 0.5
1
3
5
10
30 50 100
300
Collector current
I
C
(A)
Collector-emitter voltage
V
(V)
CE
3
2006-11-21
2SD2257
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
4
2006-11-21
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