2SD2256-E [RENESAS]
25A, 120V, NPN, Si, POWER TRANSISTOR, TO-3P, 3 PIN;
| 型号： | 2SD2256-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 25A, 120V, NPN, Si, POWER TRANSISTOR, TO-3P, 3 PIN 局域网 放大器 晶体管 |
| 文件： | 总6页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2256
Silicon NPN Triple Diffused
ADE-208-928 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SB1494
Features
•
•
High breakdown voltage and high current (VCEO = 120 V, IC = 25 A)
Built-in C-E diode
Outline
TO-3P
2
1
1. Base
2. Collector
(Flange)
ID
3. Emitter
1
3
2
3
2SD2256
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
120
120
V
7
V
25
A
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C.
IC(peak)
PC*1
Tj
35
A
120
W
°C
°C
A
150
Tstg
ID*1
–55 to +150
25
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
120
120
120
7
—
—
V
IC = 0.1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
—
—
V
V
V
IC = 25 mA, RBE = ∞
IC = 200 mA, RBE = ∞
IE = 50 mA, IC = 0
Collector to emitter sustain
voltage
VCEO(sus)
Emitter to base breakdown
voltage
V(BR)EBO
Collector cutoff current
ICBO
ICEO
hFE1
hFE2
—
—
—
—
10
µA
µA
VCB = 100 V, IE = 0
—
10
VCE = 100 V, RBE = ∞
VCE = 4 V, IC = 12 A*1
VCE = 4 V, IC = 25 A*1
IC = 12 A, IB = 24 mA*1
IC = 25 A, IB = 250 mA*1
IC = 12 A, IB = 24 mA*1
IC = 25 A, IB = 250 mA*1
DC current transfer ratio
2000
500
—
20000
—
Collector to emitter saturation VCE(sat)1
—
—
—
—
2.0
3.5
3.0
4.5
V
V
V
V
voltage
VCE(sat)2
VBE(sat)1
VBE(sat)2
—
Base to emitter saturation
voltage
—
—
Note: 1. Pulse test.
2
2SD2256
Maximum Collector Dissipation Curve
Area of Safe Operation
120
80
100
30
iC(peak)
IC(max)
10
3
40
1.0
Ta = 25°C
1 shot pulse
0.3
0.1
0
50
100
150
3
10
30
100
300
Case temperature TC (°C)
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
20
16
12
8
10,000
3,000
1,000
TC = 25°C
1.5
300
100
VCE = 4 V
4
30
10
1.0 mA
IB = 0
0
1
2
3
4
5
0.1 0.3
1.0
3
10
30
100
Collector current IC (A)
Collector to emitter voltage VCE (V)
3
2SD2256
Saturation Voltage
vs. Collector Current
10
TC = 25°C
IC/IB = 200
3
1.0
0.3
0.1
0.1 0.3
1.0
3
10
30
100
Collector current IC (A)
Transient Thermal Resistance
10
3
TC = 25°C
1.0
0.3
0.1
1 m
10 m
100 m
1.0
10
100
1000
Time t (s)
4
2SD2256
Package Dimensions
Unit: mm
4.8 ± 0.2
15.6 ± 0.3
φ3.2 ± 0.2
1.5
1.6
2.0
1.4 Max
2.8
1.0 ± 0.2
0.6 ± 0.2
0.9
1.0
3.6
5.45 ± 0.5
5.45 ± 0.5
Hitachi Code
JEDEC
TO-3P
—
EIAJ
Conforms
5.0 g
Mass (reference value)
5
2SD2256
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
6
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