NTMFS0D7N03CGT1G [ONSEMI]
MOSFET, Power, 30V N-Channel, SO8-FL;型号: | NTMFS0D7N03CGT1G |
厂家: | ONSEMI |
描述: | MOSFET, Power, 30V N-Channel, SO8-FL |
文件: | 总7页 (文件大小:214K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MOSFET - Power, Single
N-Channel, SO8-FL
30 V, 0.65 mW, 409 A
NTMFS0D7N03CG
Features
• Wide SOA to Improve Inrush Current Management
• Advanced Package (5x6mm) with Excellent Thermal Conduction
www.onsemi.com
• Ultra Low R
to Improve System Efficiency
DS(on)
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
30 V
0.65 mW @ 10 V
409 A
Applications
• Hot Swap Application
• Power Load Switch
• Battery Management and Protection
D (5−8)
G (4)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
30
Unit
V
S (1,2,3)
N−CHANNEL MOSFET
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
T
= 25°C
=100°C
= 25°C
I
409
289
187
A
C
D
q
JC
Steady
(Note 2)
MARKING
DIAGRAMS
D
C
State
Power Dissipation
T
C
P
W
A
D
R
(Note 2)
q
JC
S
D
D
DFN5 (SO−8FL)
CASE 506EZ
Continuous Drain
Current R
T = 25°C
A
I
D
59
42
0D7NG
AYWZZ
S
S
q
JA
T = 100°C
A
Steady
State
(Notes 1, 2)
G
1
Power Dissipation
T = 25°C
A
P
4.0
W
D
D
R
(Notes 1, 2)
q
JA
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
Pulsed Drain Current T = 25°C, t = 10 ms
I
DM
900
155
A
A
A
p
Source Current (Body Diode)
I
S
Single Pulse Drain−to−Source Avalanche
Energy (I = 40.8 A
E
AS
1080
mJ
)
pk
L
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
°C
J
STG
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
+175
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using 1 in pad, 2 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
June, 2021 − Rev. 6
NTMFS0D7N03CG/D
NTMFS0D7N03CG
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.8
Unit
Junction−to−Case – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
R
q
JC
°C/W
°C/W
R
38
q
JA
R
134
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA. ref to 25°C
11
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
1.0
100
100
DSS
GS
DS
J
V
= 30 V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Gate Resistance
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 280 mA
1.3
2.2
0.65
3.0
V
mV/°C
mW
S
GS(TH)
DS
D
V
/T
J
I = 280 mA. ref to 25°C
D
−5.1
0.55
100
0.4
GS(TH)
R
V
= 10 V, I = 30 A
GS D
DS(on)
g
FS
V
= 3 V, I = 30 A
DS D
R
T = 25°C
A
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
8600 12300 16000
ISS
Output Capacitance
C
4000
50
5800
88
7500
360
191
25
V
= 0 V, V = 15 V, f = 1 MHz
pF
nC
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
103
13
147
19
G(TOT)
Threshold Gate Charge
Q
G(TH)
V
GS
= 10 V, V = 15 V; I = 30 A
DS D
Gate−to−Source Charge
Gate−to−Drain Charge
Q
24
34
44
GS
GD
Q
5.2
8.6
20.5
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
28
13
85
16
d(ON)
Rise Time
t
r
V
= 10 V, V = 15 V,
DS
GS
D
ns
V
I
= 30 A, R = 3.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.78
0.62
98
1.2
SD
J
V
S
= 0 V,
GS
I
= 30 A
T = 125°C
J
Reverse Recovery Time
t
ns
RR
V
= 0 V, dIS/dt = 100 A/ms,
GS
V
= 15 V, I = 30 A
DS
S
Reverse Recovery Charge
Q
143
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTMFS0D7N03CG
TYPICAL CHARACTERISTICS
500
450
400
350
300
250
200
150
100
500
5.5 V
450
400
350
300
250
200
150
100
V
= 3 V
DS
5.0 V
4.5 V
V
= 10 V to 6 V
GS
T = 25°C
J
4.0 V
3.5 V
3.0 V
2.5 V
50
0
50
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1.0 1.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
6
5
4
3
2
1.0
0.8
0.6
T = 25°C
J
T = 25°C
D
J
I
= 30 A
V
= 10 V
GS
0.4
0.2
0
1
0
3
4
5
6
7
8
9
10
5
10
15
20
25
30
35
40
45
50
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.E+05
1.E+04
1.E+03
V
= 10 V
= 30 A
GS
T = 175°C
J
I
D
T = 150°C
J
1.5
1.0
T = 125°C
J
T = 85°C
J
0.5
0
1.E+02
1.E+01
T = 25°C
J
−50 −25
0
25
50
75 100 125 150 175
5
10
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
3
NTMFS0D7N03CG
TYPICAL CHARACTERISTICS
100K
10K
10
9
C
ISS
8
7
6
5
4
3
2
C
OSS
1K
Q
GD
Q
GS
100
10
V
I
= 15 V
= 30 A
V
= 0 V
DS
GS
C
RSS
T = 25°C
D
J
1
0
T = 25°C
J
f = 1 MHz
0
5
10
15
20
25
30
0
30
60
90
120
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
t
V
V
I
= 10 V
= 15 V
= 30 A
d(off)
GS
V
GS
= 0 V
DS
t
f
D
t
r
100
10
1
10
1
t
d(on)
T = −55°C
J
T = 125°C
J
T = 25°C
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 25°C
J(initial)
10 ms
Curve is based on
10% de−rating from
typical failure points
0.5 ms
1 ms
T
= 100°C
J(initial)
10
10 ms
1 s
T
= 25°C
Single Pulse
≤ 10 V
C
V
GS
1
R
Limit
DS(on)
Thermal Limit
Package Limit
1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
TIME IN AVALANCHE (s)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
www.onsemi.com
4
NTMFS0D7N03CG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 13. Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
DFN5
Shipping
NTMFS0D7N03CGT1G
0D7NG
1500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE A
1
DATE 25 AUG 2021
SCALE 2:1
q
q
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24855H
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号:
©2020 ICPDF网 联系我们和版权申明