NTMFS10N3D2C [ONSEMI]
N 沟道,屏蔽门极,PowerTrench® MOSFET,100 V,151A,3.2mΩ;型号: | NTMFS10N3D2C |
厂家: | ONSEMI |
描述: | N 沟道,屏蔽门极,PowerTrench® MOSFET,100 V,151A,3.2mΩ |
文件: | 总8页 (文件大小:371K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTMFS10N3D2C
MOSFET – Power Trench,
N‐Channel, Shielded Gate
100 V, 151 A, 3.2 mW
General Description
www.onsemi.com
This N-Channel MV MOSFET is produced using
ON Semiconductor’s advanced PowerTrench process that incorporates
Shielded Gate technology. This process has been optimized to
minimize on-state resistance and yet maintain superior switching
performance with best in class soft body diode.
V
R
MAX
I MAX
D
DS
DS(ON)
100 V
3.2 mW @ 10 V
9 mW @ 6 V
151 A
Features
• Shielded Gate MOSFET Technology
S (1, 2, 3)
• Max r
• Max r
= 3.2 mW at V = 10 V, I = 67 A
GS D
DS(on)
= 9 mW at V = 6 V, I = 33 A
DS(on)
GS
D
• 50% Lower Qrr than Other MOSFET Suppliers
• Lowers Switching Noise/EMI
G (4)
• MSL1 Robust Package Design
• 100% UIL Tested
• These Devices are Pb−Free and are RoHS Compliant
D (5, 6, 7, 8)
N-CHANNEL MOSFET
Applications
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
Pin 1
• Solar
Top
Bottom
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Power 56
(PQFN8)
CASE 483AF
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Value
100
20
Unit
V
V
DS
V
GS
V
MARKING DIAGRAM
I
D
A
Continuous, T = 25°C (Note 5)
151
95
21
775
C
S
S
S
G
D
D
D
D
Continuous, T = 100°C (Note 5)
C
Continuous, T = 25°C (Note 1a)
A
$Y&Z&3&K
NTMFS
10N3D2C
Pulsed (Note 4)
E
AS
Single Pulse Avalanche Energy
(Note 3)
486
mJ
W
P
D
Power Dissipation:
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
T
= 25°C
138
2.7
C
T = 25°C (Note 1a)
A
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
NTMFS10N3D2C = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
May, 2019 − Rev. 2
NTMFS10N3D2C/D
NTMFS10N3D2C
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.9
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
°C/W
R
q
JC
JA
R
45
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
100
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
73
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 80 V, V = 0 V
1
mA
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 370 mA
2.0
3.2
4.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 370 mA, referenced to 25°C
−8
mV/°C
GS(th)
J
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 67 A
2.4
3.8
4.0
144
3.2
9
mW
DS(on)
D
= 6 V, I = 33 A
D
= 10 V, I = 67 A, T = 125°C
5.4
D
J
g
FS
= 5 V, I = 67 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1 MHz
4439
2663
24
7460
4475
65
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.1
0.8
1.6
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 50 V, I = 67 A, V = 10 V,
GEN
24
12
30
7
39
22
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
48
d(off)
t
f
14
Q
Total Gate Charge
V
= 0 V to 10 V, V = 50 V,
60
100
g
GS
DD
I
= 67 A
D
V
D
= 0 V to 6 V, V = 50 V,
38
64
nC
GS
DD
I
= 67 A
Q
Gate to Source Charge
Gate to Drain “Miller” Charge
Output Charge
V
DD
V
DD
V
DD
= 50 V, I = 67 A
20
12
nC
nC
nC
gs
D
Q
= 50 V, I = 67 A
D
gd
Q
= 50 V, V = 0 V
175
oss
GS
www.onsemi.com
2
NTMFS10N3D2C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 2.1 A (Note 2)
0.7
0.8
44
1.2
1.3
71
V
SD
GS
S
= 0 V, I = 67 A (Note 2)
GS
S
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I = 33 A, di/dt = 300 A/ms
F
ns
nC
ns
rr
Q
109
33
207
53
rr
t
I = 33 A, di/dt = 1000 A/ms
F
rr
Q
235
376
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a) 45°C/W when mounted on
b) 115°C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 486 mJ is based on starting T = 25°C; N-ch: L = 3 mH, I = 18 A, V = 100 V, V = 10 V. 100% test at L = 0.1 mH, I = 58 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Figure 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro-mechanical application board design.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Marking
Package
Reel Size
Tape Width
Quantity
NTMFS10N3D2C
NTMFS10N3D2C
Power 56 (PQFN8)
(Pb-Free / Halogen Free)
13″
12 mm
3000 units
www.onsemi.com
3
NTMFS10N3D2C
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
300
250
200
150
100
50
4
3
2
VGS = 10 V
VGS = 5 V
VGS = 6.5 V
VGS = 5.5 V
VGS = 6 V
VGS = 6 V
VGS = 5.5 V
VGS = 5 V
VGS = 6.5 V
VGS = 10 V
1
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
0
50
100
150
200
250
300
, DRAIN TO SOURCE VOLTAGE (V)
VDS
, DRAIN CURRENT (A)
ID
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs. Drain
Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
ID = 67 A
VGS = 10 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
15
ID = 67 A
10
TJ = 125 o
C
5
0
TJ = 25 o
C
−75 −50 −25
0
25 50
75 100 125 150
4
5
6
7
8
9
10
T
J, JUNCTION TEMPERATURE (5C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On-Resistance vs.
Junction Temperature
Figure 4. On-Resistance vs. Gate to Source
Voltage
300
240
180
120
60
300
VGS = 0 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
100
VDS = 5 V
10
1
TJ = 150 o
C
TJ = 150 o
C
0.1
0.01
T
J = 25 o
C
T
J = 25 o
C
T
J = −55oC
TJ = −55oC
0
0.001
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
www.onsemi.com
4
NTMFS10N3D2C
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
10
8
20000
10000
ID = 67 A
Ciss
VDD = 50 V
Coss
1000
100
10
VDD = 25 V
6
VDD = 75 V
4
Crss
2
f = 1 MHz
VGS = 0 V
0
1
0.1
0
15
30
45
60
75
1
10
100
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
160
100
10
1
R
qJC = 0.9 oC/W
V
GS = 10 V
TJ = 25 o
C
120
80
40
0
TJ = 100 o
C
VGS = 6 V
TJ = 125 o
C
25
50
75
100
125
150
0.001 0.01
0.1
1
10
100
1000
, CASE TEMPERATURE (5C)
TC
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
2000
1000
50000
SINGLE PULSE
R
qJC = 0.9oC/W
10000
1000
100
T
C = 25 oC
10 ms
100
10
1
THIS AREA IS
LIMITED BY r DS(on)
100 ms
SINGLE PULSE
1 ms
TJ = MAX RATED
R
qJC = 0.9oC/W
10 ms
CURVE BENT TO
MEASURED DATA
TC = 25 oC
100 ms
0.1
0.1
10
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
10
100
500
1
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
www.onsemi.com
5
NTMFS10N3D2C
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
0.01
t
1
t
2
NOTES:
Z
R
(t) = r(t) x R
o
qJC
qJC
= 0.9 C/W
SINGLE PULSE
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
t, RECTANGULAR PULSE DURATION (sec)
10−2
10−1
1
Figure 13. Junction-to-Case Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AF
ISSUE A
DATE 06 JUL 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13656G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号:
©2020 ICPDF网 联系我们和版权申明