NTMFS3D2N10MDT1G [ONSEMI]
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 142A, 3.2mΩ;
| 型号： | NTMFS3D2N10MDT1G |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Shielded Gate PowerTrench® MOSFET 100V, 142A, 3.2mΩ 栅 |
| 文件： | 总7页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Single,
N-Channel
100 V, 3.5 mW, 142 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
3.5 mW @ 10 V
5.8 mW @ 6 V
100 V
142 A
NTMFS3D2N10MD
Features
D (5,6)
• Shielded Gate MOSFET Technology
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
• Low Q , Soft Recovery Body Diode
RR
G (4)
• Low Q
to Improve Light Load Efficiency
OSS
• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free
S (1,2,3)
N−CHANNEL MOSFET
and are RoHS Compliant
Typical Applications
• Primary Switch in Isolated DC−DC Converter
• Synchronous Rectification (SR) in DC−DC and AC−DC
• AC−DC Adapters (USB PD) SR
MARKING
DIAGRAM
D
• Load Switch, Hotswap, and ORing Switch
1
S
S
S
G
D
D
• BLDC Motor and Solar Inverter
DFN5
(SO−8FL)
CASE 506EZ
STYLE 1
3D2N10
AYWZZ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
D
V
DSS
A
Y
= Assembly Location
= Year
Gate−to−Source Voltage
V
GS
V
W
ZZ
= Work Week
= Lot Traceability
Continuous Drain
T
= 25°C
I
142
A
C
D
Current R
(Note 1)
q
JC
Steady
State
Power Dissipation
(Note 1)
P
155
19
W
A
D
R
q
JC
ORDERING INFORMATION
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
Device
NTMFS3D2N10MDT1G
Package
Shipping†
Steady
State
(Notes 1, 2)
DFN5
1500 /
Power Dissipation
P
2.8
W
D
(Pb−Free) Tape & Reel
R
(Notes 1, 2)
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
879
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
Source Current (Body Diode)
I
129
726
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 22 A) (Note 6)
AV
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
0.8
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
q
JC
R
45.2
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using 1 in pad size, 1 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2022 − Rev. 1
NTMFS3D2N10MD/D
NTMFS3D2N10MD
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
30
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
1.0
100
100
mA
DSS
GS
DS
J
V
= 80 V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 316 mA
2
4
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = 316 mA, ref to 25°C
D
−8.1
2.9
mV/°C
mW
GS(TH)
J
R
V
GS
GS
= 10 V, I = 50 A
3.5
5.8
DS(on)
D
V
= 6 V, I = 30.5 A
4.3
D
Forward Transconductance
Gate−Resistance
g
V
DS
= 8 V, I = 50 A
115
0.6
S
FS
D
R
T = 25°C
A
1.25
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
V
GS
= 0 V, f = 1 MHz, V = 50 V
3900
1100
24
pF
nC
ISS
DS
Output Capacitance
C
OSS
RSS
OSS
Reverse Transfer Capacitance
Output Charge
C
Q
V
GS
= 0 V, V = 50 V
81
DS
Total Gate Charge
Q
V
= 6 V, V = 50 V, I = 50 A
29
G(TOT)
G(TOT)
GS
DS
D
Total Gate Charge
Q
V
GS
= 10 V, V = 50 V, I = 50 A
48
71.3
11.8
DS
D
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
Q
19
GS
GD
GP
8
V
5
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
V
= 10 V, V = 50 V,
26.1
7.2
39
ns
d(ON)
GS
D
DS
I
= 50 A, R = 6 W
G
Rise Time
t
r
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
6.3
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.83
0.70
31
V
SD
RR
GS
J
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
t
V
= 0 V, dI /dt = 1000 A/ms,
ns
GS
S
I
S
= 30.5 A
Q
271
60
nC
ns
RR
t
V
= 0 V, dI /dt = 100 A/ms,
RR
GS S
I
S
= 50 A
Q
74
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
2
4. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
5. Pulse Test: pulse width < 300 ms, duty cycle < 2%.
6. E of 726 mJ is based on started T = 25°C, L = 3 mH, I = 22 A, V = 100 V, V = 10 V. 100% test at L = 0.1 mH, I = 69 A.
AS
J
AV
DD
GS
AV
7. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
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2
NTMFS3D2N10MD
TYPICAL CHARACTERISTICS
V
GS
= 10 V to 6 V
V
DS
= 5 V
120
100
80
120
100
80
5.0 V
60
60
4.8 V
4.6 V
T = 25°C
J
40
40
4.4 V
4.2 V
20
0
20
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
12
10
8
6
5
4
3
T = 25°C
J
T = 25°C
D
J
I
= 50 A
V
= 6 V
GS
6
V
GS
= 10 V
4
2
0
2
1
4
5
6
7
8
9
10
10
15
20
25
30
35
40
45
50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100
10
2.5
V
I
= 10 V
= 50 A
GS
T = 150°C
J
D
T = 125°C
J
2.0
1.5
1
T = 85°C
J
0.1
0.01
T = 25°C
J
1.0
0.5
0.001
0.0001
−50 −25
0
25
50
75
100
125 150
10 20
30
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS3D2N10MD
TYPICAL CHARACTERISTICS
10K
1K
10
V
DS
= 50 V
C
C
ISS
T = 25°C
J
8
6
4
I
D
= 50 A
OSS
Q
Q
GS
GD
100
10
V
= 0 V
2
0
GS
T = 25°C
J
C
RSS
f = 1 MHz
0
10 20 30 40 50 60 70 80 90 100
, DRAIN−TO−SOURCE VOLTAGE (V)
0
10
20
30
40
50
V
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
1000
100
V
V
= 10 V
= 50 V
= 50 A
V
GS
= 0 V
GS
DS
I
D
t
t
d(off)
d(on)
t
10
1
r
t
f
T = 125°C
T = 25°C T = −55°C
J
J
J
1
5
50
0.4
0.5
0.6
0.7
0.8
0.9
1.0
R , GATE RESISTANCE (W)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
25°C
10 ms
125°C
100 ms
100°C
10
R
= 0.8°C/W
q
JC
1 ms
Single Pulse
= 25°C
10 ms
100 ms
T
C
1
R
Limit
DS(on)
Thermal Limit
Package Limit
1 s
1
0.1
0.1
1
10
100
0.001 0.01
0.1
t , TIME IN AVALANCHE (mS)
AV
1
10
100 1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Unclamped Inductive Switching
Capability
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4
NTMFS3D2N10MD
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
0.00001
0.01
0.001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
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5
NTMFS3D2N10MD
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE A
q
q
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6
NTMFS3D2N10MD
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