NTMFS10N7D2C [ONSEMI]
功率 MOSFET，单 N 沟道，标准门极，100 V，78 A，7.2 mΩ;
| 型号： | NTMFS10N7D2C |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，单 N 沟道，标准门极，100 V，78 A，7.2 mΩ |
| 文件： | 总8页 (文件大小：473K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS10N7D2C
MOSFET – Power Trench,
N‐Channel, Shielded Gate
100 V, 78 A, 7.2 mW
General Description
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This N-Channel MV MOSFET is produced using
ON Semiconductor’s advanced PowerTrench process that incorporates
Shielded Gate technology. This process has been optimized to
minimize on-state resistance and yet maintain superior switching
performance with best in class soft body diode.
V
R
MAX
I MAX
D
DS
DS(ON)
100 V
7.2 mW @ 10 V
23.4 mW @ 6 V
78 A
Features
• Shielded Gate MOSFET Technology
• Max r
• Max r
= 7.2 mW at V = 10 V, I = 28 A
GS D
S (1, 2, 3)
DS(on)
= 23.4 mW at V = 6 V, I = 14 A
DS(on)
GS
D
• 50% Lower Qrr than Other MOSFET Suppliers
• Lowers Switching Noise/EMI
G (4)
• MSL1 Robust Package Design
• 100% UIL Tested
• These Devices are Pb−Free and are RoHS Compliant
D (5, 6, 7, 8)
Applications
N-CHANNEL MOSFET
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
• Solar
Pin 1
Top
Bottom
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Power 56
(PQFN8)
CASE 483AE
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Value
100
20
Unit
V
V
DS
V
GS
V
MARKING DIAGRAM
I
D
A
Continuous, T = 25°C (Note 5)
78
49
13
364
S
S
D
D
C
Continuous, T = 100°C (Note 5)
C
$Y&Z&3&K
NTMFS
10N7D2C
Continuous, T = 25°C (Note 1a)
A
Pulsed (Note 4)
S
D
D
E
AS
Single Pulse Avalanche Energy
(Note 3)
216
mJ
W
G
P
D
Power Dissipation:
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
T
= 25°C
83
2.5
C
T = 25°C (Note 1a)
A
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
NTMFS10N7D2C = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
May, 2019 − Rev. 2
NTMFS10N7D2C/D
NTMFS10N7D2C
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
1.5
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
°C/W
R
q
JC
JA
R
50
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
100
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
56
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 80 V, V = 0 V
1
mA
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 150 mA
2.0
3.2
4.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 150 mA, referenced to 25°C
−9
mV/°C
GS(th)
J
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 28 A
5.9
9.3
9.9
63
7.2
mW
DS(on)
D
= 6 V, I = 14 A
23.4
14.5
D
= 10 V, I = 28 A, T = 125°C
D
J
g
FS
= 5 V, I = 28 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1 MHz
1880
1105
13
3165
1860
30
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.1
0.5
1.2
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 50 V, I = 28 A, V = 10 V,
GEN
13
4
24
10
33
10
44
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
18
4
d(off)
t
f
Q
Total Gate Charge
V
= 0 V to 10 V, V = 50 V,
26
g
GS
DD
I
= 28 A
D
V
D
= 0 V to 6 V, V = 50 V,
17
28
nC
GS
DD
I
= 28 A
Q
Gate to Source Charge
Gate to Drain “Miller” Charge
Output Charge
V
DD
V
DD
V
DD
= 50 V, I = 28 A
8.2
5.1
73
nC
nC
nC
gs
D
Q
= 50 V, I = 28 A
D
gd
Q
= 50 V, V = 0 V
GS
oss
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2
NTMFS10N7D2C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 2.1 A (Note 2)
0.7
0.8
28
1.2
1.3
45
V
SD
GS
S
= 0 V, I = 28 A (Note 2)
GS
S
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I = 14 A, di/dt = 300 A/ms
F
ns
nC
ns
rr
Q
52
84
rr
t
I = 14 A, di/dt = 1000 A/ms
F
22
36
rr
Q
116
186
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a) 50°C/W when mounted on
b) 125°C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 216 mJ is based on starting T = 25°C; N-ch: L = 3 mH, I = 12 A, V = 100 V, V = 10 V. 100% test at L = 0.1 mH, I = 38 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Figure 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro-mechanical application board design.
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Marking
Package
Reel Size
Tape Width
Quantity
NTMFS10N7D2C
NTMFS10N7D2C
Power 56 (PQFN8)
(Pb-Free / Halogen Free)
13″
12 mm
3000 units
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3
NTMFS10N7D2C
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
200
150
100
50
5
V
GS = 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS = 5 V
VGS = 8 V
4
3
2
1
0
VGS = 6 V
VGS = 6.5 V
V
GS = 6.5 V
VGS = 6 V
VGS = 8 V
VGS = 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 5 V
0
0
1
2
3
4
5
0
50
100
, DRAIN CURRENT (A)
150
200
ID
, DRAIN TO SOURCE VOLTAGE (V)
VDS
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs. Drain
Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
ID = 28 A
VGS = 10 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
40
ID = 28 A
30
20
TJ = 125 o
C
10
0
TJ = 25 o
C
−75 −50 −25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
, GATE TO SOURCE VOLTAGE (V)
VGS
, JUNCTION TEMPERATURE (5C)
TJ
Figure 3. Normalized On-Resistance vs.
Junction Temperature
Figure 4. On-Resistance vs. Gate to Source
Voltage
200
150
100
50
200
100
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
10
VDS = 5 V
1
TJ = 150 o
C
TJ = 150 o
C
0.1
0.01
T
J = 25 oC
TJ = 25 o
C
TJ = −55oC
TJ = −55oC
0
0.001
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
NTMFS10N7D2C
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
10
8
10000
1000
100
10
ID = 28 A
Ciss
V
DD = 50 V
Coss
VDD = 25 V
6
VDD = 75 V
4
Crss
f = 1 MHz
2
VGS = 0 V
0
1
0.1
0
5
10
15
20
25
30
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
80
100
10
1
R
qJC = 1.5 oC/W
60
40
20
0
V
GS = 10 V
TJ = 25 oC
TJ = 100 o
C
VGS = 6 V
TJ = 125 o
C
0.01
0.1
1
10
100
25
50
75
100
125
150
, CASE TEMPERATURE (5C)
TC
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
1000
20000
10000
1000
100
SINGLE PULSE
qJC = 1.5 oC/W
TC = 25 oC
R
100
10
1
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
1 ms
R
qJC = 1.5oC/W
CURVE BENT TO
MEASURED DATA
10 ms
100 ms
TC = 25 oC
0.1
0.1
10
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
10
100
500
1
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NTMFS10N7D2C
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
0.01
t
1
t
2
NOTES:
Z
R
(t) = r(t) x R
o
SINGLE PULSE
qJC
qJC
= 1.5 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
t, RECTANGULAR PULSE DURATION (sec)
10−2
10−1
1
Figure 13. Junction-to-Case Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
DATE 21 JAN 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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