NSVF4017SG4T1G [ONSEMI]
用于低噪声放大器的射频晶体管;
| 型号： | NSVF4017SG4T1G |
| 厂家： | 
ONSEMI |
| 描述： | 用于低噪声放大器的射频晶体管 放大器 PC 射频 晶体管 |
| 文件： | 总12页 (文件大小：842K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSVF4017SG4
RF Transistor for Low Noise
Amplifier
12 V, 100 mA, fT = 10 GHz typ.
This RF transistor is designed for low noise amplifier applications.
MCPH package is suitable for use under high temperature
environment because it has superior heat radiation characteristics.
This RF transistor is AEC−Q101 qualified and PPAP capable for
automotive applications.
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Features
1
• Low−noise Use: NF = 1.2 dB typ. (f = 1 GHz)
• High Cut−off Frequency: f = 10 GHz typ. (V = 5 V)
SC−82FL
MCPH4
CASE 419AR
T
CE
2
• High Gain: |S21e| = 17 dB typ. (f = 1 GHz)
• MCPH4 Package is Pin−compatible with SC−82FL
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ELECTRICAL CONNECTION
NPN
2
Typical Applications
1: Emitter
2: Collector
3: Emitter
4: Base
• Low Noise Amplifier for Digital Radio
• Low Noise Amplifier for TV
• Low Noise Amplifier for FM Radio
• RF Amplifier for UHF Application
4
1, 3
MAXIMUM RATINGS at T = 25°C
A
MARKING DIAGRAM
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Value
20
Unit
V
V
CBO
V
CEO
V
EBO
12
V
GQ
2
V
I
C
100
450
mA
mW
°C
GQ
XX
= Specific Device Code
= Lot Number
Collector Dissipation
P
C
Operating Junction and Storage Temper-
ature
T , T
−55 to
+150
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
Package
Shipping
NSVF4015SG4T1G
SC−82FL
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2018 − Rev. 0
NSFV4017SG4/D
NSVF4017SG4
Table 1. ELECTRICAL CHARACTERISTICS at T = 25°C (Note 1)
A
Value
Typ
Min
Max
1.0
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Conditions
= 5 V, I = 0 A
Unit
mA
I
V
CB
V
EB
V
CE
V
CE
V
CE
V
CE
CBO
E
I
= 1 V, I = 0 A
1.0
mA
EBO
C
h
FE
= 5 V, I = 50 mA
60
8
150
C
Gain−Bandwidth Product
Forward Transfer Gain
Noise Figure
f
T
= 5 V, I = 30 mA
10
17
GHz
dB
C
2
| S21e |
= 5 V, I = 30 mA, f = 1 GHz
14
C
NF
= 5 V, I = 10 mA, f = 1 GHz
1.2
1.8
dB
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted.
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2
NSVF4017SG4
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
100
A
1000m
V
=5V
CE
mA
90
80
70
60
50
40
30
20
900
800
mA
mA
700
mA
600
A
m
500
400 mA
300mA
mA
200
mA
100
=0mA
10
0
10
0
I
B
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
− V
Base−to−Emitter Voltage, V
− V
BE
Collector−to−Emitter Voltage, V
CE
Figure 1. IC vs. VCE
Figure 2. IC vs. VBE
10
7
1000
f=1MHz
V
=5V
CE
7
5
5
3
2
3
2
100
1.0
7
7
5
5
3
2
3
2
10
1.0
0.1
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
100
10
100
1.0
10
Collector Current, I − mA
Collector−to−Base Voltage,V
− V
C
CB
Figure 3. hFE vs. IC
Figure 4. Cob vs. VCB
100
1.0
V
=5V
f=1MHz
CE
7
5
f=1GHz
7
5
3
2
10
3
2
7
5
3
2
0.1
0.1
1.0
1.0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
100
10
100
Collector−to−Base Voltage,V
− V
Collector Current, I − mA
CB
C
Figure 5. Cre vs. VCB
Figure 6. fT vs. IC
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3
NSVF4017SG4
TYPICAL CHARACTERISTICS
25
20
15
10
10
V
=5V
CE
V
=5V
CE
9
8
7
6
5
4
3
2
f=1GHz
f=1GHz
Zs=50 W
Zs=Zsopt
5
0
1
0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
100
1.0
10
100
Collector Current, I − mA
Collector Current, I − mA
C
C
Figure 7. MS21eS2 vs. IC
Figure 8. NF vs. IC
500
450
400
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta − °C
Figure 9. PC vs. TA
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4
NSVF4017SG4
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5
NSVF4017SG4
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6
NSVF4017SG4
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7
NSVF4017SG4
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8
NSVF4017SG4
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9
NSVF4017SG4
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−82FL / MCPH4
CASE 419AR
ISSUE O
DATE 30 DEC 2011
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON65645E
SC−82FL / MCPH4
PAGE 1 OF 1
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