NSVF5490SKT3G [ONSEMI]
RF Transistor for Low Noise Amplifier;
| 型号： | NSVF5490SKT3G |
| 厂家： | 
ONSEMI |
| 描述： | RF Transistor for Low Noise Amplifier 放大器 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSVF5490SK
RF Transistor for Low Noise
Amplifier
20 V, 30 mA, fT = 8 GHz typ. RF Transistor
This RF transistor is designed for RF amplifier applications. SSFP
package is contribute to down size of application because it is small
surface mount package. This RF transistor is AEC−Q101 qualified and
PPAP capable for automotive applications.
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3
1
2
Features
• Low−noise Use:
NF = 0.9 dB typ. (f = 1 GHz)
SOT−623 / SSFP
CASE 631AC
• High Cut−off Frequency: f = 8 GHz typ. (V = 5 V)
T
CE
2
• High Gain:
|S21e| = 10 dB typ. (f = 1.5 GHz)
• Low−voltage, Low−current Operation (V = 1 V, I = 1 mA)
ELECTRICAL CONNECTION NPN
CE
C
f = 3.5 GHz typ.
T
3
2
|S21e| = 5.5 dB typ. (f = 1.5 GHz)
• SSFP Package is Pin−compatible with SOT−623
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
1 : Base
2 : Emitter
3 : Collector
2
Typical Applications
• RF Amplifier for RKE
• RF Amplifier for ADAS
• RF Amplifier for Remote Engine Starter
MARKING DIAGRAM
MN
MN
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2019 − Rev. 0
NSVF5490SK/D
NSVF5490SK
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Symbol
Value
Unit
V
V
CBO
V
CEO
V
EBO
20
Collector to Emitter Voltage
Emitter to Base Voltage
10
1.5
V
V
Collector Current
I
30
mA
mW
°C
C
Collector Dissipation
P
100
C
Operating Junction and Storage Temperature
Tj, Tstg
−55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS at Ta = 25°C
Value
Min
Typ
Max
1.0
10
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Conditions
= 10 V, I = 0 A
Unit
mA
I
V
V
V
V
V
V
CBO
CB
EB
CE
CE
CE
CB
E
I
= 1 V, I = 0 A
mA
EBO
C
h
FE
= 5 V, I = 10 mA
90
200
C
Gain−Bandwidth Product
f 1
T
= 5 V, I = 10 mA
5
8
GHz
GHz
pF
C
f 2
T
= 1 V, I = 1 mA
3.5
0.45
0.3
10
C
Output Capacitance
Cob
Cre
= 10 V, f = 1 MHz
0.7
Reverse Transfer Capacitance
Forward Transfer Gain
pF
2
| S21e | 1
V
CE
V
CE
V
CE
V
CE
= 5 V, I = 10 mA, f = 1.5 GHz
8
dB
C
2
| S21e | 2
= 1 V, I = 1 mA, f = 1.5 GHz
5.5
1.4
0.9
dB
C
Noise Figure
NF1
NF2
3.0
dB
= 5 V, I = 5 mA, f = 1.5 GHz
C
= 2 V, I = 3 mA, f = 1 GHz
dB
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted.
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2
NSVF5490SK
TYPICAL CHARACTERISTICS
f
T
−− I
C
h
FE
−− I
C
2
5
V
CE
=5V
3
2
10
V
=5V
CE
7
100
7
5
V
=1V
CE
5
3
2
3
2
10
7
5
0.1
1.0
2
3
57
2
3
5
2
3
5
7
2
3
5
7
2
3
5
7
100
1.0
10
1.0
10
Collector Current, I −− mA
Collector Current, I −− mA
C
C
Figure 1.
Figure 2.
Cob −− V
CB
Cre −− V
CB
5
5
f=1MHz
f=1MHz
3
2
3
2
1.0
1.0
7
5
7
5
3
2
3
2
0.1
0.1
7
5
7
5
7
25
3
73
2
5
7
10
2
3
5
7
25
3
73
2
5
7
25 3
0.1
1.0
0.1
1.0
Collector−to−Base Voltage, V 10−−V
Collector−to−Base Voltage, V −−V
CB
CB
Figure 3.
Figure 4.
NF −− I
NF −− I
C
C
12
12
f=1.5GHz
V
= 2V
CE
f = 1GHz
10
8
10
8
6
6
4
2
0
4
2
0
2
3
5
7
23
3
57
2
5
23
3
57
2
3
5
7
10
2
5
0.1
1.0
10
0.1
1.0
Collector Current, I −− mA
C
Collector Current, I −− mA
C
Figure 6.
Figure 5.
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3
NSVF5490SK
TYPICAL CHARACTERISTICS
2
2
S21e
−− I
C
S21e
−− I
|
|
|
|
C
16
14
12
10
8
16
f=1.5GHz
f=1GHz
14
12
10
8
6
6
4
4
2
0
2
0
33
5
7
25
7
2
3
5
7
100
33
5
7
25
7
2
3
5
7
100
1.0
10
1.0
10
Collector Current, I −− mA
Collector Current, I −− mA
C
C
Figure 7.
Figure 8.
P
−− Ta
C
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta −− _C
Figure 9.
S PARAMETERS (COMMON EMITTER)
Freq (MHz)
|S11|
-S11
|S21|
-S21
|S12|
-S12
|S22|
-S22
V
CE
= 5 V, I = 5 mA, Z = 50 W
C
O
200
400
0.782
−37.1
−65.4
12.043
9.431
7.415
6.000
5.025
4.323
3.785
3.391
3.018
2.767
148.4
126.6
112.2
101.5
93.6
0.038
0.057
0.072
0.083
0.094
0.105
0.115
0.127
0.139
0.150
69.7
60.8
56.5
55.2
55.1
55.6
55.6
56.7
56.4
56.7
0.889
0.758
0.646
0.577
0.538
0.513
0.490
0.480
0.466
0.460
−19.5
−28.3
−33.3
−35.9
−37.6
−38.7
−39.7
−41.3
−43.5
−45.5
0.623
0.502
0.420
0.369
0.339
0.311
0.296
0.285
0.277
600
−85.6
800
−102.4
−114.7
−127.2
−137.2
−144.9
−156.5
−164.2
1000
1200
1400
1600
1800
2000
86.7
80.6
75.3
70.1
65.7
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4
NSVF5490SK
S PARAMETERS (COMMON EMITTER)
Freq (MHz)
|S11|
-S11
|S21|
-S21
|S12|
-S12
|S22|
-S22
V
CE
V
CE
V
CE
= 5 V, I = 10 mA, Z = 50 W
C
O
200
400
0.641
−52.7
−85.4
16.527
11.299
8.303
6.502
5.342
4.546
3.947
3.527
3.121
2.864
137.8
115.7
103.1
94.0
87.4
81.4
76.4
71.4
67.0
62.8
0.031
0.048
0.060
0.072
0.084
0.097
0.108
0.123
0.136
0.150
67.4
60.5
60.0
60.9
61.9
62.7
63.0
63.7
62.8
62.4
0.820
0.643
0.549
0.499
0.477
0.462
0.449
0.444
0.435
0.434
−22.9
−30.2
−32.2
−33.2
−33.9
−35.0
−36.2
−37.8
−39.9
−42.4
0.468
0.377
0.321
0.293
0.280
0.266
0.263
0.263
0.264
600
−106.6
−124.1
−136.1
−146.7
−156.6
−163.2
−173.5
−179.8
800
1000
1200
1400
1600
1800
2000
= 2 V, I = 3 mA, Z = 50 W
C
O
200
400
0.851
−30.4
−55.7
8.644
7.310
6.083
5.085
4.343
3.806
3.349
3.036
2.685
2.479
154.1
133.8
118.6
106.9
98.1
0.042
0.073
0.093
0.107
0.118
0.128
0.137
0.147
0.157
0.167
73.0
61.3
54.2
50.4
48.3
47.5
46.9
47.4
47.2
47.6
0.937
0.820
0.709
0.628
0.572
0.536
0.506
0.485
0.463
0.453
−16.4
−27.9
−35.7
−40.4
−43.7
−45.8
−47.3
−49.5
−51.9
−54.1
0.724
0.612
0.521
0.461
0.423
0.382
0.366
0.341
0.333
600
−76.1
800
−93.0
1000
1200
1400
1600
1800
2000
−106.1
−118.6
−129.4
−138.0
−148.8
−157.7
90.0
83.3
77.5
71.7
66.7
= 1 V, I = 1 mA, Z = 50 W
C
O
200
400
0.945
−18.7
−36.9
−52.9
−67.9
−81.1
−94.3
−104.9
−114.1
−124.4
−134.9
3.431
3.263
3.004
2.765
2.539
2.366
2.143
1.969
1.797
1.701
162.9
147.1
133.2
120.4
109.9
99.8
0.053
0.099
0.136
0.164
0.184
0.199
0.207
0.213
0.218
0.219
78.1
66.9
57.5
49.7
43.4
38.4
34.1
31.7
28.7
27.0
0.982
0.939
0.879
0.815
0.758
0.727
0.683
0.653
0.621
0.601
−10.3
−19.7
−27.7
−34.8
−40.0
−44.3
−47.8
−51.4
−54.9
−58.1
0.892
0.826
0.754
0.691
0.639
0.589
0.558
0.522
0.490
600
800
1000
1200
1400
1600
1800
2000
91.2
83.6
76.2
69.7
ORDERING INFORMATION
Device
†
Marking
MN
Package
Shipping
NSVF5490SKT3G
SOT−623 / SSFP
(Pb−Free / Halogen Free)
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−623 / SSFP
CASE 631AC
ISSUE O
DATE 29 FEB 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON67431E
SOT−623 / SSFP
PAGE 1 OF 1
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